Abstract
We investigate InAs/GaAs quantum dot (QD) lasers grown by gas source molecular beam
epitaxy with different growth temperatures for InAs dot layers. The same laser structures are grown,
but the growth temperatures of InAs dot layers are set as 425 and 500 °C, respectively. Ridge
waveguide laser diodes are fabricated, and the characteristics of the QD lasers are systematically
studied. The laser diodes with QDs grown at 425 °C show better performance, such as threshold
current density, output power, internal quantum efficiency, and characteristic temperature, than
those with QDs grown at 500 °C. This finding is ascribed to the higher QD density and more uniform
size distribution of QDs achieved at 425 °C.
© 2013 Chinese Optics Letters
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