Abstract

Bismuth (Bi)-doped materials have attracted a great deal of attention because of their broadband nearinfrared (near-IR) emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1 100 to 1 650 nm is generated in the Bi-doped 90GeS<sub>2</sub>-10Ga<sub>2</sub>S<sub>3</sub> glass and glass-ceramics under 820 nm of light excitation. Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi<sup>2-</sup><sub>2</sub> dimers. The precipitation of \β-GeS<sub>2</sub> nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass.

© 2013 Chinese Optics Letters

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