Abstract

High-strained InGaAs/InGaAsP multiple quantum wells (MQWs) distributed feedback (DFB) lasers, fabricated using metal organic chemical vapor deposition, are presented at 1.82 μm with a high side-mode-suppression ratio of 49.53 dB. The current- and temperature-tuning rates of the DFB mode wavelength are 0.01 nm/mA and 0.13 nm/°C, respectively. A characteristic temperature of 51 K is also confirmed. The DFB laser demonstrates good performance and can be applied to H<sub>2</sub>O concentration sensing.

© 2013 Chinese Optics Letters

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