Abstract

A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-P'erot (F-P) filter structure. The step-shaped GaAs/AlGaAs distributed Bragg reflectors and the InP PIN photodetector are grown on a GaAs substrate using low pressure metal organic chemical vapor deposition. High quality GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer. The photodetector structure is optimized by theoretical simulation. This device has a dual-peak distance of 19 nm (1 558 and 1 577 nm). The 3-dB bandwidth of 16 GHz is simultaneously obtained with peak quantum efficiencies of 8.5% and 8.6% around 1 558 and 1 577 nm, respectively.

© 2012 Chinese Optics Letters

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription