Abstract
Ag/ZnO/Pt structure resistive switching devices are fabricated by radio
frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit
stable and reversible resistive switching behavior. The ratio of high resistance
state to low resistance state can reach as high as 10<sup>2</sup>. The retention measurement
indicates that the memory property of these devices can be maintained for a long
time (over 10<sup>4</sup> s under 0.1-V durable stress). Moreover, the operation voltages are
very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is
not required in the initial state, and multi-step reset process is demonstrated.
Resistive switching device with the Ag/ZnO/ITO structure is constructed for
comparison with the Ag/ZnO/Pt device.
© 2012 Chinese Optics Letters
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