Abstract

In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) integrated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption to achieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simulation tool PISCES-II were used to analyze the dc and transient characteristics of the device. The device has a response time (including rise time and fall time) less than 200 ns, much faster than the thermooptic and micro-electromechanical systems (MEMSs) based VOAs.

© 2005 Chinese Optics Letters

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  1. S. S. Lee, J. U. Bu, S. Y. Lee, K. C. Son, C. G. Park, and T. S. Kim, IEEE Photon. Technol. Lett. 12, 407 (2000).
  2. X. M. Zhang, A. Q. Liu, C. Lu, and D. Y. Tang, Electron. Lett. 38, 382 (2002).
  3. R. A. Soref and B. R. Bennett, IEEE J. Quantum Electron. 23, 123 (1987).
  4. P. D. Hewitt and G. T. Reed, J. Lightwave Technol. 18, 443 (2000).
  5. A. Vonsovici and A. Koster, J. Lightwave Technol. 17, 129 (1999).

2002 (1)

X. M. Zhang, A. Q. Liu, C. Lu, and D. Y. Tang, Electron. Lett. 38, 382 (2002).

2000 (2)

P. D. Hewitt and G. T. Reed, J. Lightwave Technol. 18, 443 (2000).

S. S. Lee, J. U. Bu, S. Y. Lee, K. C. Son, C. G. Park, and T. S. Kim, IEEE Photon. Technol. Lett. 12, 407 (2000).

1999 (1)

1987 (1)

R. A. Soref and B. R. Bennett, IEEE J. Quantum Electron. 23, 123 (1987).

Bennett, B. R.

R. A. Soref and B. R. Bennett, IEEE J. Quantum Electron. 23, 123 (1987).

Bu, J. U.

S. S. Lee, J. U. Bu, S. Y. Lee, K. C. Son, C. G. Park, and T. S. Kim, IEEE Photon. Technol. Lett. 12, 407 (2000).

Hewitt, P. D.

Kim, T. S.

S. S. Lee, J. U. Bu, S. Y. Lee, K. C. Son, C. G. Park, and T. S. Kim, IEEE Photon. Technol. Lett. 12, 407 (2000).

Koster, A.

Lee, S. S.

S. S. Lee, J. U. Bu, S. Y. Lee, K. C. Son, C. G. Park, and T. S. Kim, IEEE Photon. Technol. Lett. 12, 407 (2000).

Lee, S. Y.

S. S. Lee, J. U. Bu, S. Y. Lee, K. C. Son, C. G. Park, and T. S. Kim, IEEE Photon. Technol. Lett. 12, 407 (2000).

Liu, A. Q.

X. M. Zhang, A. Q. Liu, C. Lu, and D. Y. Tang, Electron. Lett. 38, 382 (2002).

Lu, C.

X. M. Zhang, A. Q. Liu, C. Lu, and D. Y. Tang, Electron. Lett. 38, 382 (2002).

Park, C. G.

S. S. Lee, J. U. Bu, S. Y. Lee, K. C. Son, C. G. Park, and T. S. Kim, IEEE Photon. Technol. Lett. 12, 407 (2000).

Reed, G. T.

Son, K. C.

S. S. Lee, J. U. Bu, S. Y. Lee, K. C. Son, C. G. Park, and T. S. Kim, IEEE Photon. Technol. Lett. 12, 407 (2000).

Soref, R. A.

R. A. Soref and B. R. Bennett, IEEE J. Quantum Electron. 23, 123 (1987).

Tang, D. Y.

X. M. Zhang, A. Q. Liu, C. Lu, and D. Y. Tang, Electron. Lett. 38, 382 (2002).

Vonsovici, A.

Zhang, X. M.

X. M. Zhang, A. Q. Liu, C. Lu, and D. Y. Tang, Electron. Lett. 38, 382 (2002).

Electron. Lett. (1)

X. M. Zhang, A. Q. Liu, C. Lu, and D. Y. Tang, Electron. Lett. 38, 382 (2002).

IEEE J. Quantum Electron. (1)

R. A. Soref and B. R. Bennett, IEEE J. Quantum Electron. 23, 123 (1987).

IEEE Photon. Technol. Lett. (1)

S. S. Lee, J. U. Bu, S. Y. Lee, K. C. Son, C. G. Park, and T. S. Kim, IEEE Photon. Technol. Lett. 12, 407 (2000).

J. Lightwave Technol. (2)

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