Abstract

A passively Q-switched diode pumped Yb:YAG microchip laser with Cr^(4+):YAG saturable absorber mirror is reported. The TEM00 laser pulses are obtained with 1.7-?J pulse energy, 15-ns pulse width, 0.11-kW peak power, and a repetition rate of 2.2 kHz at 1049 nm. The doped concentration and dimension of Yb:YAG microchip crystal are 10 at.-% and ?5 × 0.6 mm^(2), respectively.

© 2005 Chinese Optics Letters

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