Abstract

Enhanced near-infrared (NIR) electroluminescence (EL) of a metal-oxide-semiconductor light emitting device (MOSLED) made on CO2 laser-annealed SiOx film is demonstrated. An EL power of near 50 nW from CO2 laser rapid-thermal-annealing (RTA) MOSLED under a biased voltage of 85 V and a current density of 2.3 mA/cm2 is preliminarily reported.

© 2007 Chinese Optics Letters

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References

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  1. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature 408, 440 (2000).
  2. C.-J. Lin and G.-R. Lin, IEEE J. Quantum Electron. 41, 441 (2005).

2005 (1)

C.-J. Lin and G.-R. Lin, IEEE J. Quantum Electron. 41, 441 (2005).

2000 (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature 408, 440 (2000).

IEEE J. Quantum Electron. (1)

C.-J. Lin and G.-R. Lin, IEEE J. Quantum Electron. 41, 441 (2005).

Nature (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature 408, 440 (2000).

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