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Optica Publishing Group
  • Chinese Optics Letters
  • Vol. 19,
  • Issue 7,
  • pp. 071301-
  • (2021)

Passive devices at 2 µm wavelength on 200 mm CMOS-compatible silicon photonics platform [Invited]

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Abstract

As a promising spectral window for optical communication and sensing, it is of great significance to realize on-chip devices at the 2 µm waveband. The development of the 2 µm silicon photonic platform mainly depends on the performance of passive devices. In this work, the passive devices were fabricated in the silicon photonic multi-project wafer process. The designed micro-ring resonator with a 0.6 µm wide silicon ridge waveguide based on a 220 nm silicon-on-insulator platform achieves a high intrinsic quality factor of 3.0×105. The propagation loss is calculated as 1.62 dB/cm. In addition, the waveguide crossing, multimode interferometer, and Mach–Zehnder interferometer were demonstrated at 2 µm with good performances.

© 2021 Chinese Laser Press

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