Abstract
The optical saturation characteristics in the germanium-on-silicon
(Ge-on-Si) photodetector are studied for the first time, to the best of
our knowledge. The relationship between the optical saturation
characteristics and the optical field distribution in the Ge layer is
illustrated by the simulation. This theory is verified by comparative
experiments with single-injection and dual-injection structures. The
dual-injection photodetector with a more balanced and uniform optical
field distribution has a 13% higher responsivity at low optical power and
74.4% higher saturation current at 1550 nm. At higher optical power, the
bandwidth of the dual-injection photodetector is five times larger than
that of the single-injection photodetector.
© 2018 Chinese Laser Press
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