Abstract

We report our experimental observation of charge domain oscillation in semi-insulating GaAs photoconductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length product of 10^(12) cm^(-2). We also show that, because of the repeated process of domain formation, the domain travels with a compromised speed of electron saturation velocity and the speed of light. As a result, the transit time of charge domains in PCSS is much shorter than that of traditional Gunn domains.

© 2005 Chinese Optics Letters

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  1. M. S. Sze, Physics of Semiconductor Devices (2nd edition) (John Wiley & Sons, Singapore, 1981), p. 44, 637.
  2. C. H. Lee, IEEE Trans. on Electron Device 37, 2426 (1990).
  3. A. Rosen and F. Zutavern, in High-Power Optically Activated Solid-State Switches (Artech House, Norwood, 1994) Chap. 11.
  4. G. M. Loubriel and F. J. Zutavern, IEEE Trans. on Plasma Science 25, 124 (1997).
  5. T. C. H. Lee, in Picosecond Optoelectronic Devices (Academic Press, Orlando, 1984), Chap. 11.
  6. W. Shi, E. Z. Chen, X. B. Zhang, and Q. Li, Chin. Phys. Lett. 19, 1119 (2002).
  7. W. Shi, W. Zhao, Z. X. Liang, and X. W. Sun, Chin. Phys. Lett. 18, 1479 (2001).
  8. W. Shi, X. B. Zhang, Q. Li, E. Z. Chen, and W. Zhao, Chin. Phys. Lett. 19, 351 (2002).
  9. B. G. Bosch and R. W. H. Engelmann, Gunn-Effect Electronics (Pitman, Bath, 1975) p. 23.
  10. J. Singh, Semiconductor Optoelectronics: Physics and Technology (McGraw Hill, Singapore, 1995) p. 205, 265.

2002 (2)

W. Shi, E. Z. Chen, X. B. Zhang, and Q. Li, Chin. Phys. Lett. 19, 1119 (2002).

W. Shi, X. B. Zhang, Q. Li, E. Z. Chen, and W. Zhao, Chin. Phys. Lett. 19, 351 (2002).

2001 (1)

W. Shi, W. Zhao, Z. X. Liang, and X. W. Sun, Chin. Phys. Lett. 18, 1479 (2001).

1997 (1)

G. M. Loubriel and F. J. Zutavern, IEEE Trans. on Plasma Science 25, 124 (1997).

1990 (1)

C. H. Lee, IEEE Trans. on Electron Device 37, 2426 (1990).

Chen, E. Z.

W. Shi, X. B. Zhang, Q. Li, E. Z. Chen, and W. Zhao, Chin. Phys. Lett. 19, 351 (2002).

W. Shi, E. Z. Chen, X. B. Zhang, and Q. Li, Chin. Phys. Lett. 19, 1119 (2002).

Lee, C. H.

C. H. Lee, IEEE Trans. on Electron Device 37, 2426 (1990).

Li, Q.

W. Shi, X. B. Zhang, Q. Li, E. Z. Chen, and W. Zhao, Chin. Phys. Lett. 19, 351 (2002).

W. Shi, E. Z. Chen, X. B. Zhang, and Q. Li, Chin. Phys. Lett. 19, 1119 (2002).

Liang, Z. X.

W. Shi, W. Zhao, Z. X. Liang, and X. W. Sun, Chin. Phys. Lett. 18, 1479 (2001).

Loubriel, G. M.

G. M. Loubriel and F. J. Zutavern, IEEE Trans. on Plasma Science 25, 124 (1997).

Shi, W.

W. Shi, E. Z. Chen, X. B. Zhang, and Q. Li, Chin. Phys. Lett. 19, 1119 (2002).

W. Shi, X. B. Zhang, Q. Li, E. Z. Chen, and W. Zhao, Chin. Phys. Lett. 19, 351 (2002).

W. Shi, W. Zhao, Z. X. Liang, and X. W. Sun, Chin. Phys. Lett. 18, 1479 (2001).

Sun, X. W.

W. Shi, W. Zhao, Z. X. Liang, and X. W. Sun, Chin. Phys. Lett. 18, 1479 (2001).

Zhang, X. B.

W. Shi, X. B. Zhang, Q. Li, E. Z. Chen, and W. Zhao, Chin. Phys. Lett. 19, 351 (2002).

W. Shi, E. Z. Chen, X. B. Zhang, and Q. Li, Chin. Phys. Lett. 19, 1119 (2002).

Zhao, W.

W. Shi, X. B. Zhang, Q. Li, E. Z. Chen, and W. Zhao, Chin. Phys. Lett. 19, 351 (2002).

W. Shi, W. Zhao, Z. X. Liang, and X. W. Sun, Chin. Phys. Lett. 18, 1479 (2001).

Zutavern, F. J.

G. M. Loubriel and F. J. Zutavern, IEEE Trans. on Plasma Science 25, 124 (1997).

Chin. Phys. Lett. (3)

W. Shi, E. Z. Chen, X. B. Zhang, and Q. Li, Chin. Phys. Lett. 19, 1119 (2002).

W. Shi, W. Zhao, Z. X. Liang, and X. W. Sun, Chin. Phys. Lett. 18, 1479 (2001).

W. Shi, X. B. Zhang, Q. Li, E. Z. Chen, and W. Zhao, Chin. Phys. Lett. 19, 351 (2002).

IEEE Trans. on Electron Device (1)

C. H. Lee, IEEE Trans. on Electron Device 37, 2426 (1990).

IEEE Trans. on Plasma Science (1)

G. M. Loubriel and F. J. Zutavern, IEEE Trans. on Plasma Science 25, 124 (1997).

Other (5)

T. C. H. Lee, in Picosecond Optoelectronic Devices (Academic Press, Orlando, 1984), Chap. 11.

A. Rosen and F. Zutavern, in High-Power Optically Activated Solid-State Switches (Artech House, Norwood, 1994) Chap. 11.

B. G. Bosch and R. W. H. Engelmann, Gunn-Effect Electronics (Pitman, Bath, 1975) p. 23.

J. Singh, Semiconductor Optoelectronics: Physics and Technology (McGraw Hill, Singapore, 1995) p. 205, 265.

M. S. Sze, Physics of Semiconductor Devices (2nd edition) (John Wiley & Sons, Singapore, 1981), p. 44, 637.

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