Abstract

To improve the optical storage performance, Sn was doped into Ge_(2)Sb_(2)Te_(5) phase change thin films. The optical and thermal properties of Sn-doped Ge_(2)Sb_(2)Te_(5) film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge_(2)Sb_(2)Te_(5) media.

© 2005 Chinese Optics Letters

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