Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Applied Spectroscopy
  • Vol. 74,
  • Issue 11,
  • pp. 1384-1390
  • (2020)

Interactions Between Epitaxial Graphene Grown on the Si- and C-Faces of 4H-SiC Investigated Using Raman Imaging and Tip-Enhanced Raman Scattering

Not Accessible

Your library or personal account may give you access

Abstract

Interactions between epitaxial graphene grown on Si- and C-faces were investigated using Raman imaging and tip-enhanced Raman scattering (TERS). In the TERS spectrum, which has a spatial resolution exceeding the diffraction limit, a D band was observed not from graphene surface, but from the edges of the epitaxial graphene ribbons without a buffer layer, which interacts with SiC on the Si-face. In contrast, for a graphene micro-island on the C-face, the D band disappeared even on the edges where the C atoms were arranged in armchair configurations. The disappearance of the edge chirality via combination between the C atoms and SiC on the C-face is responsible for this phenomenon. The TERS signals from the C-face were weaker than those from the Si-face without the buffer layer. On the Si-face with a buffer layer, the graphene TERS signal was hardly observed. TERS enhancement was suppressed by interactions on the edges or by the buffer layer between the SiC and graphene on the C- or Si-face, respectively.

© 2020 The Author(s)

PDF Article
More Like This
Temperature and doping dependence of the Raman scattering in 4H-SiC

Yan Peng, Xiaobo Hu, Xiangang Xu, Xiufang Chen, Juan Peng, Jisheng Han, and Sima Dimitrijev
Opt. Mater. Express 6(9) 2725-2733 (2016)

Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes

Lingyu Wan, Dishu Zhao, Fangze Wang, Gu Xu, Tao Lin, Chin-Che Tin, Zhaochi Feng, and Zhe Chuan Feng
Opt. Mater. Express 8(1) 119-127 (2018)

Electro-optical properties of a graphene device on a tip-enhanced Raman spectroscopy system

Ary Portes, Rafael Nadas, Ado Jorio, and Jhonattan C. Ramirez
Opt. Lett. 49(4) 871-874 (2024)

Supplementary Material (1)

NameDescription
Supplement 1       sj-pdf-1-asp-10.1177_0003702820944247 - Supplemental material for Interactions Between Epitaxial Graphene Grown on the Si- and C-Faces of 4H-SiC Investigated Using Raman Imaging and Tip-Enhanced Raman Scattering

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.