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Optica Publishing Group
  • Applied Spectroscopy
  • Vol. 71,
  • Issue 9,
  • pp. 2136-2145
  • (2017)

Origin of Analyte-Induced Porous Silicon Photoluminescence Quenching

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Abstract

We report on gaseous analyte-induced photoluminescence (PL) quenching of porous silicon, as-prepared (ap-pSi) and oxidized (ox-pSi). By using steady-state and emission wavelength-dependent time-resolved intensity luminescence measurements in concert with a global analysis scheme, we find that the analyte-induced quenching is best described by a three-component static quenching model. In the model, there are blue, green, and red emitters (associated with the nanocrystallite core and surface trap states) that each exhibit unique analyte-emitter association constants and these association constants are a consequence of differences in the pSi surface chemistries.

© 2017 The Author(s)

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