Abstract

We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide–semiconductor field-effect transistor (MOSFET) and found that compressive stress of approximately 20 MPa occurs under the source and gate electrodes and tensile stress of approximately 10 MPa occurs between the source and gate electrodes. The experimental result was in close agreement with the result obtained by calculation using the finite element method (FEM). A combination of Raman spectroscopy and FEM provides much data on the stresses in 4H-SiC MOSFET.

© 2016 The Author(s)

SiGe optoelectronic metal-oxide semiconductor field-effect transistor

Ali K. Okyay, Abhijit J. Pethe, Duygu Kuzum, Salman Latif, David A. Miller, and Krishna C. Saraswat
Opt. Lett. 32(14) 2022-2024 (2007)

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

Ya-Ju Lee, Zu-Po Yang, Pin-Guang Chen, Yung-An Hsieh, Yung-Chi Yao, Ming-Han Liao, Min-Hung Lee, Mei-Tan Wang, and Jung-Min Hwang
Opt. Express 22(S6) A1589-A1595 (2014)

Temperature and doping dependence of the Raman scattering in 4H-SiC

Yan Peng, Xiaobo Hu, Xiangang Xu, Xiufang Chen, Juan Peng, Jisheng Han, and Sima Dimitrijev
Opt. Mater. Express 6(9) 2725-2733 (2016)

Effects of substrate voltage on noise characteristics and hole lifetime in SOI metal-oxide-semiconductor field-effect transistor photon detector

Dedy Septono Catur Putranto, Purnomo Sidi Priambodo, Djoko Hartanto, Wei Du, Hiroaki Satoh, Atsushi Ono, and Hiroshi Inokawa
Opt. Express 22(18) 22072-22079 (2014)

SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting

Wei Du, Hiroshi Inokawa, Hiroaki Satoh, and Atsushi Ono
Opt. Lett. 36(15) 2800-2802 (2011)