Abstract

Stress and structural variations in laser-annealed polysilicon have been investigated using Raman microscopy. Stress images derived from Raman shift and bandwidth data at sub-micrometer resolution have been generated for samples with and without phosphorous implantation as a function of anneal laser fluence. Large variations in stress leading to cracking and delamination were observed for the P-implanted samples, which were essentially absent in the unimplanted samples.

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