Abstract

In this paper, we report on the thermal properties of a low-dielectric-constant organic spin-on glass, methyl silsesquioxane (MSQ), an important material for semiconductor device fabrication. The compositional and structural changes of this MSQ material, when heated in air and N₂, were investigated in detail with Fourier transform infrared (FT-IR) spectroscopy and thermogravimetric analysis (TGA). MSQ transforms to thermal oxide SiO₂ above 500 °C when heated in air, and it forms oxygen-deficient SiO₂ above 700 °C in N₂. Our results suggest that a cure temperature higher than the current 425 °C is preferred to form films with better cross-linked network structure.

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