Abstract
The microline focus spectrometer (MiFS) Raman imaging process is described and is used to investigate stress and structure defect patterns in micro-indented single-crystal silicon. Raman intensity, frequency, and bandwidth images are reported with 0.3- mu m pixel resolution, which reveal residual compressive stress distributions around the indentation site and areas of tensile stress at the crack tips. A previously unreported annular structural defect region, remote from the indent site, is observed in images where the indenter tip edges are aligned with the 110 direction of the silicon crystal.
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription