Abstract

We will demonstrate that our micro-FT-IR mapping system is highly effective for investigating the behavior of interstitial oxygen (Oi) in Czochralski-grown silicon single crystals. The micro-FT-IR system experiences high space resolution, and Oi striations of as-grown silicon single crystals or of oxygen micro-precipitation after a thermal treatment are quantitatively measured. Oi micro-distribution profiles of as-grown crystals exhibit regular or irregular intervals and height, depending upon their crystal growth conditions. Oxygen micro-precipitations along growth striations are dependent upon their initial Oi micro-distribution profiles, and anomalous oxygen micro-precipitation is not observed.

Reduction of the bulk absorption coefficient in silicon optics for high-energy lasers through defect engineering

William A. Goodman and Mark S. Goorsky
Appl. Opt. 34(18) 3367-3373 (1995)

Ultrathin silicon wafer defect detection method based on IR micro-digital holography

Benlin Lai, Yongan Zhang, and Changxing Zhang
Appl. Opt. 62(15) 4040-4046 (2023)

Measurement of the refractive-index profile in polycrystalline germanium–silicon alloy GRIN crystals

Denis P. Naughton, Joseph J. Miceli, and Duncan T. Moore
Appl. Opt. 27(3) 505-507 (1988)

High-speed growth of CsSr_1-xEu_xI₃ (x = 0.03, 0.05, 0.07) single crystals by the edge-defined film-fed growth method

Qian Yao, Lintao Liu, Weimin Dong, Hang Wen, Qingbo Wang, Jing Li, and Jiyang Wang
Opt. Mater. Express 9(12) 4742-4750 (2019)

Crystal defects revealed by Schlieren photography and chemical etching in nonlinear single crystal LYSB

Mourad Bourezzou, Alain Maillard, Régine Maillard, Philippe Villeval, Gérard Aka, Julien Lejay, Pascal Loiseau, and Daniel Rytz
Opt. Mater. Express 1(8) 1569-1576 (2011)