Abstract

The theory allowing depth profile information to be recovered from variable-angle attenuated total reflection spectroscopy is shown for both perpendicular and parallel polarizations. The errors invoked by the necessary approximations are evaluated by comparison with exact optical simulations using dispersion theory.

Porosity depth profiling of thin porous silicon layers by use of variable-angle spectroscopic ellipsometry: a porosity graded-layer model

Leif A. A. Pettersson, Lars Hultman, and Hans Arwin
Appl. Opt. 37(19) 4130-4136 (1998)

Simple Variable-Angle ATR Spectrophotometer Accessory

A. C. Gilby
Appl. Opt. 13(11) 2479-2480 (1974)

Incidence angles for optimized ATR excitation of surface plasmons

Eric F. Y. Kou and Theodor Tamir
Appl. Opt. 27(19) 4098-4103 (1988)

Effects on profile depth of changes in the thickness of the photoresist layers

Arturo Olivares-Pérez, Daniel Malacara, Cristina E. Solano S., and J. P. Isaksen
Appl. Opt. 33(10) 2043-2047 (1994)

Thickness measurement of ultrathin films on metal substrates using ATR

H. Kitajima, K. Hieda, and Y. Suematsu
Appl. Opt. 19(18) 3106-3109 (1980)