Abstract
The use of single-side polished (SSP) silicon wafers is becoming more commonplace in the semiconductor industry, due to the cost involved in polishing wafers. The determination of the oxygen concentration in such wafers is subject to various errors as a result of the scattering of radiation from the uneven backsides. Moreover, the prescribed ASTM procedures for such a determination are based on samples with both sides polished. In addition, one is sometimes required to compare oxygen concentrations in SSP and double-side polished (DSP) wafers.
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