The spectral dependence of the refractive index <i>n</i> and extinction coefficient <i>k</i> of chemical-vapor-deposited (CVD) silicon oxide film on silicon wafer has been determined. The results are used to calculate spectral absorbances for 0.1-2 μm thick oxide films with unchanged structure. The dependence on thickness of the position of Si-O stretching (<i>v<sub>M</sub></i>) has been investigated. The main factor influencing the frequency is the transmission factor at the air/film and film/substrate boundaries. In the limit of d → 0, <i>v<sub>M</sub></i> corresponds to the maximum of the Im (ε) function.
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