Abstract

The spectral dependence of the refractive index <i>n</i> and extinction coefficient <i>k</i> of chemical-vapor-deposited (CVD) silicon oxide film on silicon wafer has been determined. The results are used to calculate spectral absorbances for 0.1-2 μm thick oxide films with unchanged structure. The dependence on thickness of the position of Si-O stretching (<i>v<sub>M</sub></i>) has been investigated. The main factor influencing the frequency is the transmission factor at the air/film and film/substrate boundaries. In the limit of d → 0, <i>v<sub>M</sub></i> corresponds to the maximum of the Im (ε) function.

PDF Article

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription