Abstract

In undoped quartz glass (e.g., Suprasil W 1) defects of the type Si⁺O⁻ are found, presumably caused by breaks in Si—O bonds. The Raman bands at 490 and 600 cm⁻¹ are correlated to these defects, as shown by Bates <i>et al.</i> by irradiation of quartz glass with neutrons. With increasing irradiation the intensity of the bands at 490 and 600 cm⁻¹ increased, as well. At 2 × 10²⁰ neutrons/cm² the band 600 cm⁻¹ increased by a factor of 7.3 compared to the sample without irradiation. Interpretation of this increase as caused by an increase in the number of Si⁺O⁻ defects is supported by results from x-ray small angle scattering. On the other hand, Walrafen reports a decrease in the intensities of the 490 and 600 cm⁻¹ bands by doping SiO₂ glass with GeO₂ or B₂O₃ as well as a small decrease of these bands with increasing content of OH. These facts are explained by interaction of the dopants with the Si⁺O⁻ defects.

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