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Optica Publishing Group
  • Applied Spectroscopy
  • Vol. 32,
  • Issue 2,
  • pp. 175-177
  • (1978)

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

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Abstract

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub>/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

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