Abstract

Previous work on oxygen in silicon resulted in producing an infrared calibration curve based on gas fusion analysis. This calibration curve was also compared with an activation analysis method. The normal spectrometric technique employs a double beam grating spectrophotometer and a 1-cm polished silicon sample and reference slices. The silicon lattice band at 1100 cm⁻¹ overlaps the silicon-oxygen vibration band at 1107 cm⁻¹. Thus, to measure the baseline accurately it is necessary to have an oxygen-free silicon in the reference beam. The lattice band is ratioed out of the spectra, and only the oxygen-silicon vibration band appears. Using 1-cm thick sample and reference slices a limit of detection of 50 ppb atomic is obtained. The 1-cm thickness used is the maximum possible; the lattice absorption band absorbs sufficient energy for greater thickness to degrade the signal-to-noise ratio. The poor signal-to-noise ratio for thicker samples results in meaningless results when a spectral scan is run.

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