Abstract
A dc-arc technique is described for the analysis of impurities in tantalum thin films. Films are sputtered directly on ultrapure graphite substrates, heat oxidized, and removed mechanically. Graphite is employed as the buffer, and samples are compared to standards of similar composition. The graphite-substrate technique has been applied to films of other metals produced by sputtering, resistance-heating evaporation, and electron-beam evaporation. Only portions of the spectrographic procedure are modified for different metallic films.
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