High-power sampled-grating-based master oscillator power amplifier system with 23.5&#x2009;&#x2009;nm wavelength tuning around 970&#x2009;&#x2009;nm

M. Tawfieq; H. Wenzel; P. Della Casa; O. Brox; A. Ginolas; P. Ressel; D. Feise; A. Knigge; M. Weyers; B. Sumpf; G. Tränkle

doi:10.1364/AO.57.008680

Applied Optics
Vol. 57,
Issue 29,
pp. 8680-8685
(2018)
•https://doi.org/10.1364/AO.57.008680

High-power sampled-grating-based master oscillator power amplifier system with 23.5 nm wavelength tuning around 970 nm

M. Tawfieq, H. Wenzel, P. Della Casa, O. Brox, A. Ginolas, P. Ressel, D. Feise, A. Knigge, M. Weyers, B. Sumpf, and G. Tränkle

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M. Tawfieq, H. Wenzel, P. Della Casa, O. Brox, A. Ginolas, P. Ressel, D. Feise, A. Knigge, M. Weyers, B. Sumpf, and G. Tränkle, "High-power sampled-grating-based master oscillator power amplifier system with 23.5 nm wavelength tuning around 970 nm," Appl. Opt. 57, 8680-8685 (2018)

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Related Topics
Table of Contents Category
- Lasers, Optical Amplifiers, and Laser Optics
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About this Article
History
- Original Manuscript: June 26, 2018
- Revised Manuscript: August 30, 2018
- Manuscript Accepted: September 11, 2018
- Published: October 8, 2018

Abstract

Tunable high-power diode lasers are key components in various established and emerging applications. In this work, we present a compact hybrid master oscillator power amplifier (MOPA) laser system. The system utilizes a tunable GaAs-based sampled-grating (SG) distributed Bragg reflector (DBR) laser as the master oscillator (MO), which emits around a wavelength of 970 nm in a single longitudinal mode with a spectral width below 20 pm. The SG-DBR laser consists of two SGs, each of which can be thermally tuned with microheaters. By tuning one of the two SGs, a discrete wavelength tuning of 21.1 nm can be obtained with a Vernier mode spacing of about 2.3 nm. By tuning both SGs, 23.5 nm of quasi-continuous tuning is obtained, with a mode spacing of about 115 pm. The coupling of the beam emitted by the MO into a tapered power amplifier provides an amplified output power in the watt range having a nearly diffraction-limited beam with a propagation factor of $M_{1 / e^{2}}^{2} = 1.6$ . The combination of high power and wide wavelength tuning in a compact system makes this light source ideal for, among other things, nonlinear frequency conversion.

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Layer	Composition	Thickness (nm)
Contact layer	$p$ -GaAs	100
Cladding layer	$p - {Al}_{0.35} {Ga}_{0.65} As$	1230
Confinement layer	$p$ -GaAs	130
Spacer layer	GaAsP	10
Active region—QW	${In}_{0.17} {Ga}_{0.83} As$	7
Spacer layer	GaAsP	10
Active region—QW	${In}_{0.17} {Ga}_{0.83} As$	7
Spacer layer	GaAsP	10
Grating layer	InGaP	40
Confinement layer	$n$ -GaAs	130
Cladding layer	$n - {Al}_{0.17} {Ga}_{0.83} As$	3200
Buffer layer	$n$ -GaAs	300

Layer	Composition	Thickness (nm)
Contact layer	$p$ -GaAs	160
Cladding layer	$p - {Al}_{0.85} {Ga}_{0.15} As$	330
Confinement layer	$p - {Al}_{0.35} {Ga}_{0.65} As$	800
Spacer layer	InGaP	5
Active region—QW	${In}_{0.16} {Ga}_{0.84} As$	8
Spacer layer	InGaP	5
Active region—QW	${In}_{0.16} {Ga}_{0.84} As$	8
Spacer layer	InGaP	5
Confinement layer	$n - {Al}_{0.35} {Ga}_{0.65} As$	4850
Cladding layer	$n - {Al}_{0.85} {Ga}_{0.15} As$	500
Buffer layer	$n$ -GaAs	300

Layer	Composition	Thickness (nm)
Contact layer	$p$ -GaAs	100
Cladding layer	$p - {Al}_{0.35} {Ga}_{0.65} As$	1230
Confinement layer	$p$ -GaAs	130
Spacer layer	GaAsP	10
Active region—QW	${In}_{0.17} {Ga}_{0.83} As$	7
Spacer layer	GaAsP	10
Active region—QW	${In}_{0.17} {Ga}_{0.83} As$	7
Spacer layer	GaAsP	10
Grating layer	InGaP	40
Confinement layer	$n$ -GaAs	130
Cladding layer	$n - {Al}_{0.17} {Ga}_{0.83} As$	3200
Buffer layer	$n$ -GaAs	300

Layer	Composition	Thickness (nm)
Contact layer	$p$ -GaAs	160
Cladding layer	$p - {Al}_{0.85} {Ga}_{0.15} As$	330
Confinement layer	$p - {Al}_{0.35} {Ga}_{0.65} As$	800
Spacer layer	InGaP	5
Active region—QW	${In}_{0.16} {Ga}_{0.84} As$	8
Spacer layer	InGaP	5
Active region—QW	${In}_{0.16} {Ga}_{0.84} As$	8
Spacer layer	InGaP	5
Confinement layer	$n - {Al}_{0.35} {Ga}_{0.65} As$	4850
Cladding layer	$n - {Al}_{0.85} {Ga}_{0.15} As$	500
Buffer layer	$n$ -GaAs	300

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Tables (2)

Applied Optics