Abstract

Slip phenomenon on a (001) silicon surface under 1064 nm laser ablation was studied by experiments and simulations. The surface morphologies of the silicon wafers after laser irradiation were observed using an optical microscope. The slip patterns showed that slip that occurred before melting was responsible for a low-quality ablation surface. The slip damage was predicted by a three-dimensional finite element model based on heat transfer and thermoelasticity theory. The judging criterion of slip was explained in detail. The numerical results gave a better understanding of slip phenomenon in experiments. It is shown that low laser irradiances cause slip and high laser irradiances are helpful in preventing slip. The threshold irradiance is $\sim 1\mathrm{MW}/{\mathrm{cm}}^2$. Lasers with higher irradiance are essential to obtain a slip-free ablation on a (001) silicon surface.

© 2017 Optical Society of America

Dislocation analysis of germanium wafers under 1080 nm laser ablation

YinChuan Sha, ZhiChao Jia, Zewen Li, YunXiang Pan, Pengyu Nan, and XiaoWu Ni
Appl. Opt. 59(23) 6803-6808 (2020)

Thermal process of a silicon wafer under a CW laser and 100–10000 Hz pulsed laser irradiation

Zhichao Jia, Luanhong Sun, Xiang Chen, Xinhua Li, Zewen Li, and Lingyun Hao
Appl. Opt. 62(36) 9577-9582 (2023)

Surface damage induced by a combined millisecond and nanosecond laser

Xueming Lv, Yunxiang Pan, Zhichao Jia, Zewen Li, and Xiaowu Ni
Appl. Opt. 56(17) 5060-5067 (2017)

Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser

Xi Wang, Yuan Qin, Bin Wang, Liang Zhang, Zhonghua Shen, Jian Lu, and Xiaowu Ni
Appl. Opt. 50(21) 3725-3732 (2011)

Mechanisms for the millisecond laser-induced functional damage to silicon charge-coupled imaging sensors

Zewen Li, Xi Wang, Zhonghua Shen, Jian Lu, and Xiaowu Ni
Appl. Opt. 54(3) 378-388 (2015)