This special issue focuses on recent advances in the field of III-V semiconductor lasers emitting in the near- to mid-infrared spectral regions, with particular emphasis on devices that emit radiation with wavelengths between 1 and 13 µm.
Despite ongoing development of III-V semiconductor lasers operating the near- to mid-infrared spectral region of 1-13 µm over the last few decades, significant improvement in laser performance is still needed to enable applications in optical communication and sensing, spectroscopy, gas sensing, and imaging. Papers representing recent developments of sophisticated and cutting-edge laser technologies with an emphasis on the near- to mid-infrared side of the electromagnetic spectrum are welcome.
This feature issue will cover all aspects of semiconductor lasers including cavity, active region, new laser materials, wavelength tunability, photonic integration, and dimensionality.
Topics of interest include, but are not limited to:
Manuscripts must be prepared according to the usual standards for submission to Applied Optics and must be uploaded through OSA's electronic submission system, specifying from the drop-down menu that the manuscript is for the Feature Issue on Near- to Mid-IR (1-13 µm) III-V Semiconductor Lasers. All papers need to present original, previously unpublished work, and will be subject to the normal standards and peer-review process of the journals.
Shamsul Arafin, University of California, Santa Barbara, USA
Fatima Toor, University of Iowa, USA
Kaikai Xu, University of Electronic Science and Technology of China, China