Abstract

An argon ion laser and an ir microscope have been combined to function as a unique combination for non-destructively testing the quality of bonded connections in microcircuits of the beam lead type. A microcircuit is heated with the focused beam from the laser and scanned with the microscope to determine the temperature pattern. Nonbonded microcircuits, poorly bonded microcircuits, and a multiplicity of adjacent poorly bonded leads have been detected by using this scanner. Preliminary results have indicated that a single nonbonded connection in an array of well bonded connections may be detected. An analytical check by computer analysis demonstrates the validity of the experimental data.

© 1970 Optical Society of America

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References

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  1. M. P. Lepselter, Bell System Tech. J. 45, 233 (1966).
  2. F. L. Howland, J. E. Clark, M. P. Eleftherion, “Bonding of Beam Load Integrated Circuits,” Paper presented to the International Electron Device Meeting, 19 October 1967.
  3. M. P. Eleftherion, F. J. Schneider, W. R. Wanesky, Proceedings 1968 Electronic Components Conference (IEEE, May1968), p. 419.
  4. A. Coucoulas, B. H. Cranston, IEEE Trans. Electron Devices ED-15, 664 (1968).
    [CrossRef]
  5. F. E. Alzofon, A. D. McDonald, Mater. Evaluation 25, 183 (1967).
  6. D. H. Schumacher, Transactions Infrared and Thermal Sessions (American Society for Nondestructive Testing, October1967), p. 42.
  7. C. D. Irish, private communication, used by permission of Bell Laboratories, Holmdel, N. J.
  8. E. F. Labuda, E. I. Gordon, R. C. Miller, IEEE J. Quantum Electron. QE-1, 273 (1965).
    [CrossRef]
  9. J. R. Yoder, Appl. Opt. 7, 1791 (1968).
    [CrossRef] [PubMed]
  10. V. L. Hein, Bell System Tech. J. 46, 1659 (1967).

1968 (2)

A. Coucoulas, B. H. Cranston, IEEE Trans. Electron Devices ED-15, 664 (1968).
[CrossRef]

J. R. Yoder, Appl. Opt. 7, 1791 (1968).
[CrossRef] [PubMed]

1967 (2)

F. E. Alzofon, A. D. McDonald, Mater. Evaluation 25, 183 (1967).

V. L. Hein, Bell System Tech. J. 46, 1659 (1967).

1966 (1)

M. P. Lepselter, Bell System Tech. J. 45, 233 (1966).

1965 (1)

E. F. Labuda, E. I. Gordon, R. C. Miller, IEEE J. Quantum Electron. QE-1, 273 (1965).
[CrossRef]

Alzofon, F. E.

F. E. Alzofon, A. D. McDonald, Mater. Evaluation 25, 183 (1967).

Clark, J. E.

F. L. Howland, J. E. Clark, M. P. Eleftherion, “Bonding of Beam Load Integrated Circuits,” Paper presented to the International Electron Device Meeting, 19 October 1967.

Coucoulas, A.

A. Coucoulas, B. H. Cranston, IEEE Trans. Electron Devices ED-15, 664 (1968).
[CrossRef]

Cranston, B. H.

A. Coucoulas, B. H. Cranston, IEEE Trans. Electron Devices ED-15, 664 (1968).
[CrossRef]

Eleftherion, M. P.

F. L. Howland, J. E. Clark, M. P. Eleftherion, “Bonding of Beam Load Integrated Circuits,” Paper presented to the International Electron Device Meeting, 19 October 1967.

M. P. Eleftherion, F. J. Schneider, W. R. Wanesky, Proceedings 1968 Electronic Components Conference (IEEE, May1968), p. 419.

Gordon, E. I.

E. F. Labuda, E. I. Gordon, R. C. Miller, IEEE J. Quantum Electron. QE-1, 273 (1965).
[CrossRef]

Hein, V. L.

V. L. Hein, Bell System Tech. J. 46, 1659 (1967).

Howland, F. L.

F. L. Howland, J. E. Clark, M. P. Eleftherion, “Bonding of Beam Load Integrated Circuits,” Paper presented to the International Electron Device Meeting, 19 October 1967.

Irish, C. D.

C. D. Irish, private communication, used by permission of Bell Laboratories, Holmdel, N. J.

Labuda, E. F.

E. F. Labuda, E. I. Gordon, R. C. Miller, IEEE J. Quantum Electron. QE-1, 273 (1965).
[CrossRef]

Lepselter, M. P.

M. P. Lepselter, Bell System Tech. J. 45, 233 (1966).

McDonald, A. D.

F. E. Alzofon, A. D. McDonald, Mater. Evaluation 25, 183 (1967).

Miller, R. C.

E. F. Labuda, E. I. Gordon, R. C. Miller, IEEE J. Quantum Electron. QE-1, 273 (1965).
[CrossRef]

Schneider, F. J.

M. P. Eleftherion, F. J. Schneider, W. R. Wanesky, Proceedings 1968 Electronic Components Conference (IEEE, May1968), p. 419.

Schumacher, D. H.

D. H. Schumacher, Transactions Infrared and Thermal Sessions (American Society for Nondestructive Testing, October1967), p. 42.

Wanesky, W. R.

M. P. Eleftherion, F. J. Schneider, W. R. Wanesky, Proceedings 1968 Electronic Components Conference (IEEE, May1968), p. 419.

Yoder, J. R.

Appl. Opt. (1)

Bell System Tech. J. (2)

M. P. Lepselter, Bell System Tech. J. 45, 233 (1966).

V. L. Hein, Bell System Tech. J. 46, 1659 (1967).

IEEE J. Quantum Electron. (1)

E. F. Labuda, E. I. Gordon, R. C. Miller, IEEE J. Quantum Electron. QE-1, 273 (1965).
[CrossRef]

IEEE Trans. Electron Devices (1)

A. Coucoulas, B. H. Cranston, IEEE Trans. Electron Devices ED-15, 664 (1968).
[CrossRef]

Mater. Evaluation (1)

F. E. Alzofon, A. D. McDonald, Mater. Evaluation 25, 183 (1967).

Other (4)

D. H. Schumacher, Transactions Infrared and Thermal Sessions (American Society for Nondestructive Testing, October1967), p. 42.

C. D. Irish, private communication, used by permission of Bell Laboratories, Holmdel, N. J.

F. L. Howland, J. E. Clark, M. P. Eleftherion, “Bonding of Beam Load Integrated Circuits,” Paper presented to the International Electron Device Meeting, 19 October 1967.

M. P. Eleftherion, F. J. Schneider, W. R. Wanesky, Proceedings 1968 Electronic Components Conference (IEEE, May1968), p. 419.

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Figures (7)

Fig. 1
Fig. 1

Fifty-beam leaded device. The arrows indicate the scanning configuration with circles (⃝) representing the measuring spots 125 μ from the silicon edge.

Fig. 2
Fig. 2

Schematic illustration of laser-ir microscope scanner. A, ion laser; B, laser output mirror; C, fixed mirror; D, adjustable mirror; E, adjustable focusing microscope; F, vacuum flat; G, positioning table; H, substrate; I, ir microscope; J, recorder; K, tape reader and control for positioning table.

Fig. 3
Fig. 3

Laser output vs wavelength.

Fig. 4
Fig. 4

Temperature of computed (tasic) and experimental results for well bonded, fifty-leaded device.

Fig. 5
Fig. 5

Temperature difference plots of computed (tasic) and experimental results for poorly bonded and unbonded devices.

Fig. 6
Fig. 6

Temperature difference plots of computed (tasic) and experimental results for devices bonded on three sides. Experimental results after rebonding of the devices are also shown.

Fig. 7
Fig. 7

Temperature of (a) experimental and (b) computed (tasic) results when one lead is left unbonded.

Tables (1)

Tables Icon

Table I Description of Bond Conditions in Microcircuit Sample

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