Abstract

We have found that the rate of photogeneration depends directly on the electric field applied across an evaporated film of amorphous selenium. By using a technique based on time resolving the transport of free carriers across the film, we can separate bulk trapping losses from a supply limitation in the optical generation region. Experimental results are also presented that can be used to eliminate conventional recombination effects in the optical absorption region. The wavelength and electric field dependence of the photosensitivity are directly related to the mechanism of photogeneration.

© 1969 Optical Society of America

Recombination in Selenium Electrophotographic Layers

J. Viscakas, V. Gaidelis, A. Matulionis, E. Montrimas, and A. Šatas
Appl. Opt. 8(S1) 27-29 (1969)

The Xerographic Properties of Bi-Se Amorphous Films

J. C. Schottmiller, T. W. Taylor, and F. W. Ryan
Appl. Opt. 8(S1) 55-58 (1969)

Fast Photodischarge of Selenium Electrophotographic Layers

J. K. Viščakas, E. A. Montrimas, and A. A. Pažera
Appl. Opt. 8(S1) 79-82 (1969)

Occurrence of Polarized Space Charge in Vapor Deposited Selenium Layers During Electrophotographic Processes

Kenichi Nakamura and Masaaki Ueno
Appl. Opt. 8(S1) 183-191 (1969)

Aging of Vitreous Arsenic-Selenium Photoconductors

Michael P. Trubisky and James H. Neyhart
Appl. Opt. 8(S1) 59-63 (1969)