Abstract

The real refractive index n and power absorption coefficient α of high resistivity GaAs and CdTe have been directly measured at 300 K and 8 K in the wavelength region from 12.5 μ to 300 μ. This spectral region contains the fundamental lattice resonance of both materials: 37.2 μ for GaAs and 71.4 μ for CdTe. This resonance causes large dispersion in the linear material properties. Single Drude-type oscillators have been visually fit to the measured n data with the results that for GaAs, dc = 12.8 ± 0.5 at 300 K and 12.6 ± 0.5 at 8 K, and ′ = 10.9 ± 0.4 at 300 K and 8 K; for CdTe, dc = 9.4 ± 0.4 at 300 K and 9.0 ± 0.4 at 8 K, and ′ = 6.7 ± 0.3 at 300 K and 8 K. The GaAs data clarifies the role of dispersion in n in the 5–20 μ region where previous results differ considerably. For both materials the n and α data in the region past 30 μ are the first to be reported.

© 1969 Optical Society of America

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  1. A. Yariv, C. A. Mead, J. V. Parker, IEEE J. Quantum Electron. QE-2, 243 (1966).
    [Crossref]
  2. I. P. Kaminow, IEEE J. Quantum Electron. QE-4, 23 (1968).
    [Crossref]
  3. T. E. Walsh, RCA Rev. 27, 323 (1966).
  4. C. J. Johnson, Proc. IEEE 56, 1719 (1968).
    [Crossref]
  5. W. L. Faust, C. H. Henry, Phys. Rev. Lett. 17, 1265 (1966).
    [Crossref]
  6. W. L. Faust, C. H. Henry, R. H. Eick, Phys. Rev. 173, 781 (1968).
    [Crossref]
  7. O. M. Stafsudd, F. A. Haak, K. Radisavljević, J. Opt. Soc. Amer. 57, 1475 (1967).
    [Crossref]
  8. K. G. Hambleton, C. Hilsum, B. R. Holeman, Proc. Phys. Soc. (London) 77, 1147 (1961).
    [Crossref]
  9. M. Hass, in Semiconductors and Semimetals, R. K. Willardson, A. C. Beer, Eds. (Academic Press, Inc., New York, 1967), Vol. 3, p. 11.
    [Crossref]
  10. B. O. Seraphin, H. E. Bennett, in Semiconductors and Semimetals, R. K. Willardson, A. C. Beer, Eds. (Academic Press, Inc., New York, 1967), Vol. 3, p. 513.
    [Crossref]
  11. W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, J. Appl. Phys. 32, 2102 (1961).
    [Crossref]
  12. D. E. McCarthy, Appl. Opt. 7, 1997 (1968).
    [Crossref] [PubMed]
  13. O. G. Lorimer, W. G. Spitzer, J. Appl. Phys. 36, 1841 (1965).
    [Crossref]
  14. A. Mitsuishi, J. Phys. Soc. Japan 16, 533 (1961).
    [Crossref]
  15. G. L. Bottger, A. L. Geddes, J. Chem. Phys. 47, 4858 (1957).
    [Crossref]
  16. B. Piriou, F. Cabannes, Compt. Rend. 255, 2932 (1962).
  17. F. Oswald, R. Schade, Z. Naturforsch. 9a, 611 (1954).
  18. M. Hass, B. W. Henvis, J. Phys. Chem. Solids 23, 1099 (1962).
    [Crossref]
  19. S. Jones, S. Mao, Appl. Phys. Lett. 11, 351 (1967).
    [Crossref]
  20. P. W. Davis, T. S. Shilliday, Phys. Rev. 118, 1020 (1960).
    [Crossref]
  21. A. Mitsuishi, H. Yoshinga, K. Yata, A. Manabe, Japan J. Appl. Phys. 4, 581 (1965).
  22. P. Fisher, H. Y. Fan, Bull. Amer. Phys. Soc. 4, 409 (1959).
  23. T. S. Moss, Proc. Phys. Soc. (London) 74, 490 (1959).
    [Crossref]
  24. D. T. F. Marple, J. Appl. Phys. 35, 539 (1964).
    [Crossref]
  25. K. J. Planker, E. Kauer, Z. Angew. Phys. 12, 425 (1960).
  26. Unpublished results of Marple and Roberts cited in Ref. 7 of this paper.
  27. S. Yamada, J. Phys. Soc. Japan 15, 1940 (1960).
    [Crossref]
  28. C. M. Randall, R. D. Rawcliffe, Appl. Opt. 7, 213 (1968).
    [Crossref] [PubMed]
  29. D. deNobel, D. Hofman, Physica 22, 252 (1956).
    [Crossref]
  30. G. Picus, E. Burstein, B. W. Henvis, M. Hass, J. Phys. Chem. Solids 8, 282 (1959).
    [Crossref]
  31. S. I. Novikova, in Semiconductors and Semimetals, R. K. Willardson, A. C. Beer, Eds. (Academic Press, Inc., Vol. 2, New York, 1966), p. 33.
    [Crossref]
  32. D. F. Gibbons, Phys. Rev. 112, 136 (1958).
    [Crossref]

1968 (5)

I. P. Kaminow, IEEE J. Quantum Electron. QE-4, 23 (1968).
[Crossref]

C. J. Johnson, Proc. IEEE 56, 1719 (1968).
[Crossref]

W. L. Faust, C. H. Henry, R. H. Eick, Phys. Rev. 173, 781 (1968).
[Crossref]

D. E. McCarthy, Appl. Opt. 7, 1997 (1968).
[Crossref] [PubMed]

C. M. Randall, R. D. Rawcliffe, Appl. Opt. 7, 213 (1968).
[Crossref] [PubMed]

1967 (2)

O. M. Stafsudd, F. A. Haak, K. Radisavljević, J. Opt. Soc. Amer. 57, 1475 (1967).
[Crossref]

S. Jones, S. Mao, Appl. Phys. Lett. 11, 351 (1967).
[Crossref]

1966 (3)

A. Yariv, C. A. Mead, J. V. Parker, IEEE J. Quantum Electron. QE-2, 243 (1966).
[Crossref]

W. L. Faust, C. H. Henry, Phys. Rev. Lett. 17, 1265 (1966).
[Crossref]

T. E. Walsh, RCA Rev. 27, 323 (1966).

1965 (2)

O. G. Lorimer, W. G. Spitzer, J. Appl. Phys. 36, 1841 (1965).
[Crossref]

A. Mitsuishi, H. Yoshinga, K. Yata, A. Manabe, Japan J. Appl. Phys. 4, 581 (1965).

1964 (1)

D. T. F. Marple, J. Appl. Phys. 35, 539 (1964).
[Crossref]

1962 (2)

B. Piriou, F. Cabannes, Compt. Rend. 255, 2932 (1962).

M. Hass, B. W. Henvis, J. Phys. Chem. Solids 23, 1099 (1962).
[Crossref]

1961 (3)

A. Mitsuishi, J. Phys. Soc. Japan 16, 533 (1961).
[Crossref]

K. G. Hambleton, C. Hilsum, B. R. Holeman, Proc. Phys. Soc. (London) 77, 1147 (1961).
[Crossref]

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, J. Appl. Phys. 32, 2102 (1961).
[Crossref]

1960 (3)

P. W. Davis, T. S. Shilliday, Phys. Rev. 118, 1020 (1960).
[Crossref]

K. J. Planker, E. Kauer, Z. Angew. Phys. 12, 425 (1960).

S. Yamada, J. Phys. Soc. Japan 15, 1940 (1960).
[Crossref]

1959 (3)

P. Fisher, H. Y. Fan, Bull. Amer. Phys. Soc. 4, 409 (1959).

T. S. Moss, Proc. Phys. Soc. (London) 74, 490 (1959).
[Crossref]

G. Picus, E. Burstein, B. W. Henvis, M. Hass, J. Phys. Chem. Solids 8, 282 (1959).
[Crossref]

1958 (1)

D. F. Gibbons, Phys. Rev. 112, 136 (1958).
[Crossref]

1957 (1)

G. L. Bottger, A. L. Geddes, J. Chem. Phys. 47, 4858 (1957).
[Crossref]

1956 (1)

D. deNobel, D. Hofman, Physica 22, 252 (1956).
[Crossref]

1954 (1)

F. Oswald, R. Schade, Z. Naturforsch. 9a, 611 (1954).

Bennett, H. E.

B. O. Seraphin, H. E. Bennett, in Semiconductors and Semimetals, R. K. Willardson, A. C. Beer, Eds. (Academic Press, Inc., New York, 1967), Vol. 3, p. 513.
[Crossref]

Bottger, G. L.

G. L. Bottger, A. L. Geddes, J. Chem. Phys. 47, 4858 (1957).
[Crossref]

Burstein, E.

G. Picus, E. Burstein, B. W. Henvis, M. Hass, J. Phys. Chem. Solids 8, 282 (1959).
[Crossref]

Cabannes, F.

B. Piriou, F. Cabannes, Compt. Rend. 255, 2932 (1962).

Cochran, W.

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, J. Appl. Phys. 32, 2102 (1961).
[Crossref]

Davis, P. W.

P. W. Davis, T. S. Shilliday, Phys. Rev. 118, 1020 (1960).
[Crossref]

deNobel, D.

D. deNobel, D. Hofman, Physica 22, 252 (1956).
[Crossref]

Eick, R. H.

W. L. Faust, C. H. Henry, R. H. Eick, Phys. Rev. 173, 781 (1968).
[Crossref]

Fan, H. Y.

P. Fisher, H. Y. Fan, Bull. Amer. Phys. Soc. 4, 409 (1959).

Faust, W. L.

W. L. Faust, C. H. Henry, R. H. Eick, Phys. Rev. 173, 781 (1968).
[Crossref]

W. L. Faust, C. H. Henry, Phys. Rev. Lett. 17, 1265 (1966).
[Crossref]

Fisher, P.

P. Fisher, H. Y. Fan, Bull. Amer. Phys. Soc. 4, 409 (1959).

Fray, S. J.

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, J. Appl. Phys. 32, 2102 (1961).
[Crossref]

Geddes, A. L.

G. L. Bottger, A. L. Geddes, J. Chem. Phys. 47, 4858 (1957).
[Crossref]

Gibbons, D. F.

D. F. Gibbons, Phys. Rev. 112, 136 (1958).
[Crossref]

Haak, F. A.

O. M. Stafsudd, F. A. Haak, K. Radisavljević, J. Opt. Soc. Amer. 57, 1475 (1967).
[Crossref]

Hambleton, K. G.

K. G. Hambleton, C. Hilsum, B. R. Holeman, Proc. Phys. Soc. (London) 77, 1147 (1961).
[Crossref]

Hass, M.

M. Hass, B. W. Henvis, J. Phys. Chem. Solids 23, 1099 (1962).
[Crossref]

G. Picus, E. Burstein, B. W. Henvis, M. Hass, J. Phys. Chem. Solids 8, 282 (1959).
[Crossref]

M. Hass, in Semiconductors and Semimetals, R. K. Willardson, A. C. Beer, Eds. (Academic Press, Inc., New York, 1967), Vol. 3, p. 11.
[Crossref]

Henry, C. H.

W. L. Faust, C. H. Henry, R. H. Eick, Phys. Rev. 173, 781 (1968).
[Crossref]

W. L. Faust, C. H. Henry, Phys. Rev. Lett. 17, 1265 (1966).
[Crossref]

Henvis, B. W.

M. Hass, B. W. Henvis, J. Phys. Chem. Solids 23, 1099 (1962).
[Crossref]

G. Picus, E. Burstein, B. W. Henvis, M. Hass, J. Phys. Chem. Solids 8, 282 (1959).
[Crossref]

Hilsum, C.

K. G. Hambleton, C. Hilsum, B. R. Holeman, Proc. Phys. Soc. (London) 77, 1147 (1961).
[Crossref]

Hofman, D.

D. deNobel, D. Hofman, Physica 22, 252 (1956).
[Crossref]

Holeman, B. R.

K. G. Hambleton, C. Hilsum, B. R. Holeman, Proc. Phys. Soc. (London) 77, 1147 (1961).
[Crossref]

Johnson, C. J.

C. J. Johnson, Proc. IEEE 56, 1719 (1968).
[Crossref]

Johnson, F. A.

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, J. Appl. Phys. 32, 2102 (1961).
[Crossref]

Jones, S.

S. Jones, S. Mao, Appl. Phys. Lett. 11, 351 (1967).
[Crossref]

Kaminow, I. P.

I. P. Kaminow, IEEE J. Quantum Electron. QE-4, 23 (1968).
[Crossref]

Kauer, E.

K. J. Planker, E. Kauer, Z. Angew. Phys. 12, 425 (1960).

Lorimer, O. G.

O. G. Lorimer, W. G. Spitzer, J. Appl. Phys. 36, 1841 (1965).
[Crossref]

Manabe, A.

A. Mitsuishi, H. Yoshinga, K. Yata, A. Manabe, Japan J. Appl. Phys. 4, 581 (1965).

Mao, S.

S. Jones, S. Mao, Appl. Phys. Lett. 11, 351 (1967).
[Crossref]

Marple, D. T. F.

D. T. F. Marple, J. Appl. Phys. 35, 539 (1964).
[Crossref]

McCarthy, D. E.

Mead, C. A.

A. Yariv, C. A. Mead, J. V. Parker, IEEE J. Quantum Electron. QE-2, 243 (1966).
[Crossref]

Mitsuishi, A.

A. Mitsuishi, H. Yoshinga, K. Yata, A. Manabe, Japan J. Appl. Phys. 4, 581 (1965).

A. Mitsuishi, J. Phys. Soc. Japan 16, 533 (1961).
[Crossref]

Moss, T. S.

T. S. Moss, Proc. Phys. Soc. (London) 74, 490 (1959).
[Crossref]

Novikova, S. I.

S. I. Novikova, in Semiconductors and Semimetals, R. K. Willardson, A. C. Beer, Eds. (Academic Press, Inc., Vol. 2, New York, 1966), p. 33.
[Crossref]

Oswald, F.

F. Oswald, R. Schade, Z. Naturforsch. 9a, 611 (1954).

Parker, J. V.

A. Yariv, C. A. Mead, J. V. Parker, IEEE J. Quantum Electron. QE-2, 243 (1966).
[Crossref]

Picus, G.

G. Picus, E. Burstein, B. W. Henvis, M. Hass, J. Phys. Chem. Solids 8, 282 (1959).
[Crossref]

Piriou, B.

B. Piriou, F. Cabannes, Compt. Rend. 255, 2932 (1962).

Planker, K. J.

K. J. Planker, E. Kauer, Z. Angew. Phys. 12, 425 (1960).

Quarrington, J. E.

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, J. Appl. Phys. 32, 2102 (1961).
[Crossref]

Radisavljevic, K.

O. M. Stafsudd, F. A. Haak, K. Radisavljević, J. Opt. Soc. Amer. 57, 1475 (1967).
[Crossref]

Randall, C. M.

Rawcliffe, R. D.

Schade, R.

F. Oswald, R. Schade, Z. Naturforsch. 9a, 611 (1954).

Seraphin, B. O.

B. O. Seraphin, H. E. Bennett, in Semiconductors and Semimetals, R. K. Willardson, A. C. Beer, Eds. (Academic Press, Inc., New York, 1967), Vol. 3, p. 513.
[Crossref]

Shilliday, T. S.

P. W. Davis, T. S. Shilliday, Phys. Rev. 118, 1020 (1960).
[Crossref]

Spitzer, W. G.

O. G. Lorimer, W. G. Spitzer, J. Appl. Phys. 36, 1841 (1965).
[Crossref]

Stafsudd, O. M.

O. M. Stafsudd, F. A. Haak, K. Radisavljević, J. Opt. Soc. Amer. 57, 1475 (1967).
[Crossref]

Walsh, T. E.

T. E. Walsh, RCA Rev. 27, 323 (1966).

Williams, N.

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, J. Appl. Phys. 32, 2102 (1961).
[Crossref]

Yamada, S.

S. Yamada, J. Phys. Soc. Japan 15, 1940 (1960).
[Crossref]

Yariv, A.

A. Yariv, C. A. Mead, J. V. Parker, IEEE J. Quantum Electron. QE-2, 243 (1966).
[Crossref]

Yata, K.

A. Mitsuishi, H. Yoshinga, K. Yata, A. Manabe, Japan J. Appl. Phys. 4, 581 (1965).

Yoshinga, H.

A. Mitsuishi, H. Yoshinga, K. Yata, A. Manabe, Japan J. Appl. Phys. 4, 581 (1965).

Appl. Opt. (2)

Appl. Phys. Lett. (1)

S. Jones, S. Mao, Appl. Phys. Lett. 11, 351 (1967).
[Crossref]

Bull. Amer. Phys. Soc. (1)

P. Fisher, H. Y. Fan, Bull. Amer. Phys. Soc. 4, 409 (1959).

Compt. Rend. (1)

B. Piriou, F. Cabannes, Compt. Rend. 255, 2932 (1962).

IEEE J. Quantum Electron. (2)

A. Yariv, C. A. Mead, J. V. Parker, IEEE J. Quantum Electron. QE-2, 243 (1966).
[Crossref]

I. P. Kaminow, IEEE J. Quantum Electron. QE-4, 23 (1968).
[Crossref]

J. Appl. Phys. (3)

O. G. Lorimer, W. G. Spitzer, J. Appl. Phys. 36, 1841 (1965).
[Crossref]

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, J. Appl. Phys. 32, 2102 (1961).
[Crossref]

D. T. F. Marple, J. Appl. Phys. 35, 539 (1964).
[Crossref]

J. Chem. Phys. (1)

G. L. Bottger, A. L. Geddes, J. Chem. Phys. 47, 4858 (1957).
[Crossref]

J. Opt. Soc. Amer. (1)

O. M. Stafsudd, F. A. Haak, K. Radisavljević, J. Opt. Soc. Amer. 57, 1475 (1967).
[Crossref]

J. Phys. Chem. Solids (2)

M. Hass, B. W. Henvis, J. Phys. Chem. Solids 23, 1099 (1962).
[Crossref]

G. Picus, E. Burstein, B. W. Henvis, M. Hass, J. Phys. Chem. Solids 8, 282 (1959).
[Crossref]

J. Phys. Soc. Japan (2)

S. Yamada, J. Phys. Soc. Japan 15, 1940 (1960).
[Crossref]

A. Mitsuishi, J. Phys. Soc. Japan 16, 533 (1961).
[Crossref]

Japan J. Appl. Phys. (1)

A. Mitsuishi, H. Yoshinga, K. Yata, A. Manabe, Japan J. Appl. Phys. 4, 581 (1965).

Phys. Rev. (3)

P. W. Davis, T. S. Shilliday, Phys. Rev. 118, 1020 (1960).
[Crossref]

D. F. Gibbons, Phys. Rev. 112, 136 (1958).
[Crossref]

W. L. Faust, C. H. Henry, R. H. Eick, Phys. Rev. 173, 781 (1968).
[Crossref]

Phys. Rev. Lett. (1)

W. L. Faust, C. H. Henry, Phys. Rev. Lett. 17, 1265 (1966).
[Crossref]

Physica (1)

D. deNobel, D. Hofman, Physica 22, 252 (1956).
[Crossref]

Proc. IEEE (1)

C. J. Johnson, Proc. IEEE 56, 1719 (1968).
[Crossref]

Proc. Phys. Soc. (London) (2)

K. G. Hambleton, C. Hilsum, B. R. Holeman, Proc. Phys. Soc. (London) 77, 1147 (1961).
[Crossref]

T. S. Moss, Proc. Phys. Soc. (London) 74, 490 (1959).
[Crossref]

RCA Rev. (1)

T. E. Walsh, RCA Rev. 27, 323 (1966).

Z. Angew. Phys. (1)

K. J. Planker, E. Kauer, Z. Angew. Phys. 12, 425 (1960).

Z. Naturforsch. (1)

F. Oswald, R. Schade, Z. Naturforsch. 9a, 611 (1954).

Other (4)

M. Hass, in Semiconductors and Semimetals, R. K. Willardson, A. C. Beer, Eds. (Academic Press, Inc., New York, 1967), Vol. 3, p. 11.
[Crossref]

B. O. Seraphin, H. E. Bennett, in Semiconductors and Semimetals, R. K. Willardson, A. C. Beer, Eds. (Academic Press, Inc., New York, 1967), Vol. 3, p. 513.
[Crossref]

Unpublished results of Marple and Roberts cited in Ref. 7 of this paper.

S. I. Novikova, in Semiconductors and Semimetals, R. K. Willardson, A. C. Beer, Eds. (Academic Press, Inc., Vol. 2, New York, 1966), p. 33.
[Crossref]

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Figures (6)

Fig. 1
Fig. 1

Far infrared real refractive index of high resistivity CdTe at 300 K and 8 K.

Fig. 2
Fig. 2

Far infrared transmission of high resistivity CdTe at 300 K and 8 K.

Fig. 3
Fig. 3

Far infrared power absorption coefficient of high resistivity CdTe at 300 K and 8 K.

Fig. 4
Fig. 4

Far infrared real refractive index of high resistivity GaAs at 300 K and 8 K.

Fig. 5
Fig. 5

Far infrared transmission of high resistivity GaAs at 300 K and 8 K.

Fig. 6
Fig. 6

Far infrared power absorption coefficient of high resistivity GaAs at 300 K and 8 K.

Tables (1)

Tables Icon

Table I Refractive Index Fitting Parameters

Equations (17)

Equations on this page are rendered with MathJax. Learn more.

= 0 r = 0 ( + i ) ,
N = n i κ .
n ( ) 1 2 ,
κ / 2 ( ) 1 2 .
α = 4 π κ / λ ,
n [ + N i e i 2 o m i ω i 2 ( 1 ( γ i / λ ) 2 + ( λ i / λ ) 2 ( γ / ω i ) 2 1 ( λ i / λ ) 2 ) 1 ] 1 2 ,
T = ( 1 R ) 2 e α d ( 1 R e α d ) 2 + 4 R e α d sin 2 ( 2 π n d / λ ) ,
R = ( n 1 ) 2 + κ 2 ( n + 1 ) 2 + κ 2 [ n 1 n + 1 ] 2 .
2 d = m ( λ / n ) ,
n 300 μ ( d c ) 1 2 .
T = ( 1 R ) 2 e α d / ( 1 R 2 e 2 α d ) .
Δ = d c = N i e i 2 0 m i ω i 2 .
e s * = [ 6 π c ( 0 ) 1 2 / ( + 2 ) λ i ] [ m i ( Δ ) / N i ] 1 2 ,
d d T ( Δ ) = Δ 1 N i d N i d T + 2 e i d e i d T 2 ω i d ω i d T .
δ ( Δ ) = Δ 300 ° [ ( 1 / N i ) 300 ° δ N i + ( 2 / e i ) 300 ° δ e i ( 2 / ω i ) 300 ° δ ω i ] ,
N i 8 ° N i 300 ° ( Volume 300 ° / Volume 8 ° ) = N i 300 ° ( 1 + 0.0024 )
( 1 / N i ) 300 ° δ N i 0.002 .

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