Abstract

The papers listed deal with the reflection and transmission of BN, CdS, CdTe, GaAs, GaSb, GaP, InAs, InSb, InP, RbBr, RbCl, RbI, SrTiO3, and Te. Index of refraction papers are also included. The papers are listed according to material and are arranged alphabetically by the first author in each section.

© 1968 Optical Society of America

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  1. R. Geick, C. H. Perry, G. Rupprecht, “Normal modes in hexagonal boron nitride,” Phys. Rev. 146, 543 (1966).
    [CrossRef]
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    [CrossRef]
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  5. T. M. Bieniewski, S. J. Czyzak, “Refractive indexes of single hexagonal ZnS and CdS crystals,” J. Opt. Soc. Amer. 53, 496 (1963).
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  7. M. Cardona, “Reflectivity of semiconductors with wurtzite structure,” Phys. Rev. 129, 1068 (1963).
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  12. S. J. Czyzak, R. C. Crane, T. M. Bieniewski, “Dichroism in essentially pure and activated cadmium sulphide single crystals,” J. Opt. Soc. Amer. 49, 485 (1959).
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  23. J. J. Hopfield, D. G. Thomas, “Magneto-optic absorption spectrum of CdS,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).
  24. J. J. Hopfield, D. G. Thomas, “Photon momentum effects in the magneto-optics of excitons,” Phys. Rev. Lett. 4, 357 (1960).
  25. J. J. Hopfield, D. G. Thomas, “Theoretical and experimental effects of spatial dispersion on the optical properties of crystals,” Phys. Rev. 132, 563 (1963).
  26. C. C. Klick, “Luminescence and photoconductivity in cadmium sulphide at the absorption edge,” Phys. Rev. 89, 274 (1953).
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  28. A. Manabe, A. Mitsuishi, H. Yoshinaga, “Infrared lattice reflection spectra of II–VI Compounds,” Jap. J. Appl. Phys. 6, 593 (1967).
  29. A. Mitsuishi, H. Yoshinaga, S. Fujita, “Far-infrared absorption of sulfides, selenides, and tellurides of zinc and cadmium,” J. Phys. Soc. Jap. 13, 1235 (1958).
  30. A. Mitsuishi, A. Manabe, H. Yoshinaga, S. Ibuki, H. Komiya, “Infrared absorption of localized vibration due to lithium in zinc selenide and cadmium sulphide,” Proceedings of the International Conference of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).
  31. D. C. Reynolds, S. J. Czyzak, R. C. Allen, C. C. Reynolds, “Properties of single cadmium sulphide crystals,” J. Opt. Soc. Amer. 45, 136 (1955).
  32. H. Shenker, “Low-field breakdown, non-ohmic conductivity, and photoconductivity of CdS at low temperature,” J. Phys. Chem. Solids 19, 1 (1961).
  33. D. L. Stierwalt, R. F. Potter, “Infrared spectral emittance of Si, Ge, and CdS,” Proceedings of the International Conference on Physics of Semiconductors, Exeter 1962 (Physical Society, 1962).
  34. D. G. Thomas, J. J. Hopfield, “Exciton spectrum of cadmium sulphide,” Phys. Rev. 116, 573 (1959).
  35. R. Williams, “Electric field light absorption in CdS,” Phys. Rev. 117, 1487 (1960).
  36. M. Cardona, “Fundamental reflectivity spectrum of semiconductors with zinc-blende structures,” J. Appl. Phys. 32, 215 (1961).
  37. M. Cardona, “Fundamental reflectivity and band structure of ZnTe, CdTe, and HgTe,” Phys. Rev. 131, 98 (1963).
  38. M. Cardona, G. Garbeke, “Absorption of germanium and zinc-blende-type materials at energies higher than the fundamental absorption edge,” J. Appl. Phys. 34, 813 (1963).
  39. P. W. Davis, T. S. Shilliday, “Some optical properties of cadmium telluride,” Phys. Rev. 118, 1020 (1960).
  40. C. Z. van Doorn, D. de Nobel, “Luminescence, transmission, and width of the energy gap of CdTe single crystals,” Physica 22, 338 (1956).
  41. D. A. Jenny, R. H. Bube, “Superconducting CdTe,” Phys. Rev. 96, 1190 (1954).
  42. N. K. Kisileva, N. N. Pribytkova, “Determination of the optical constants of Ge and CdTe by the reflection method,” Opt. Spectrosc. 10, 133 (1961).
  43. D. T. F. Marple, “Effective electron mass in CdTe,” Phys. Rev. 129, 2466 (1963).
  44. A. Mitsuishi, “Optical properties of CdTe in the far infrared region,” J. Phys. Soc. Jap. 16, 533 (1961).
  45. K. J. Planker, E. Kauer, “Bestimmung der effektiven Masse freier Ladungsträger in Halbleitern aus der Ultrarotabsorption,” Z. Angew. Phys. 12, 425 (1960). See also Refs. 28 and 29.
  46. M. Cardona, “Temperature dependence of the refractive index and the polarizability of free carriers in some III–V semiconductors,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).
  47. M. Cardona, “Optical investigations of the band structure of GaSb,” Z. Phys. 161, 99 (1961).
  48. M. Cardona, “Optical determination of the conductron band structure of GaSb,” J. Phys. Chem. Solids 17, 336 (1961).
  49. F. A. Cunnell, T. J. Edmond, J. C. Richards, “Measurements on some semiconducting compounds with the zinc-blende structure,” Proc. Phys. Soc. 67B, 849 (1954).
  50. D. F. Edwards, G. S. Hayne, “Optical properties of gallium antimonide,” J. Opt. Soc. Amer. 49, 415 (1959).
  51. M. Hass, B. W. Henvis, “Infrared lattice reflection spectra of III–V compound semiconductors,” J. Phys. Chem. Solids 23, 1099 (1962).
  52. H. J. Hrostowski, C. S. Fuller, “Extension of infrared spectra of III–V compounds by lithium diffusion,” J. Phys. Chem. Solids 4, 157 (1958).
  53. E. J. Johnson, I. Filinski, H. Y. Fan, “Absorption and emission of excitons and impurities in GaSb,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).
  54. S. I. Kovtunenko, V. V. Sobolev, “Reflection Spectra of Ge, InSB, GaSb, InAs, and GaP,” Opt. Spectrosc. 21, 186 (1966).
  55. F. Lukes, E. Schmidt, “The fine structure and the temperature dependence of the reflectivity and optical constants of Ge, Si, and III–V compounds,” Proceedings of the Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).
  56. F. Oswald, R. Schade, “Über die Bestimmung der optischen Konstanten von Halbleitern des Typus AIIIBVim Infraroten,” Z. Naturforsch. 9a, 611 (1954).
  57. G. S. Picus, E. Burstein, B. W. Henvis, “Infrared lattice vibration studies of polar character in compound semiconductors,” Bull. Amer. Phys. Soc. 2, 66 (1957).
  58. G. Picus, E. Burstein, B. W. Henvis, M. Hass, “Infrared lattice vibration studies of polar character in compound semiconductors,” J. Phys. Chem. Solids 8, 282 (1958).
  59. A. K. Ramdas, H. Y. Fan, “Infrared absorption in gallium antimonide,” Bull. Amer. Phys. Soc. 3, 121 (1958).
  60. V. Roberts, G. E. Quarrington, “Accurate measurements of absorption in indium antimonide and gallium antimonide,” J. Elec. 1, 152 (1955).
  61. J. Tauc, A. Abraham, “Reflection spectra of semiconductors with diamond and sphalerite structures,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).
  62. J. Tauc, “Optical properties of semiconductors,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).
  63. H. Welker, “Semiconducting intermetallic compounds,” Physica 20, 893 (1954).
  64. J. C. Woolley, K. W. Blazey, “Reflectivity spectra of GaSb–InSb and GaAs–InAs alloys,” J. Phys. Chem. Solids 25, 713 (1964). See also Refs. 15, 36, and 39.
  65. C. Barcus, A. Perlmutter, J. Callaway, “Effective mass of electrons in gallium arsenide,” Phys. Rev. 111, 167 (1958).
  66. F. Bassani, D. L. Greenway, G. Fischer, “Investigation of the band structure of the layer compounds GaAs and GaSe,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).
  67. R. Braunstein, L. Magid, “Optical absorption in p-type gallium arsenide,” Phys. Rev. 111, 480 (1958).
  68. R. Braunstein, “Intervalance band transitions in gallium arsenide,” J. Phys. Chem. Solids 8, 280 (1959).
  69. W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, “Lattice absorption in gallium arsenide,” J. Appl. Phys. 32,2102S (1961).
  70. H. Ehrenreich, H. R. Phillip, “Optical properties of semiconductors in the ultraviolet,” Proceedings of the International Conference in Semiconductor Physics, Exeter 1962 (Physical Society, 1962).
  71. S. Iwasa, I. Balslev, E. Burstein, “The fundamental infrared lattice vibration spectra of GaAs,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).
  72. F. A. Johnson, W. Cochran, “The application of the shell model to infrared lattice absorption bands of semiconductors,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).
  73. C. E. Jones, A. R. Hilton, “The depth of mechanical damage in gallium arsenide,” J. Electrochem. Soc. 112, 908 (1965).
  74. I. Kudman, L. Vieland, “Absorption edge in degenerate n-type gallium arsenide,” J. Phys. Chem. Solid 24, 967 (1963).
  75. L. M. Lambert, “Optical absorption in an electric field in semi-insulating gallium arsenide,” J. Phys. Chem. Solids 26, 1409 (1965).
  76. E. Loh, “Spectral photoresponse of Si, GaAs, and Ge shallow junction in the region of 1–5 eV,” J. Phys. Chem. Solids 24, 493 (1963).
  77. T. S. Moss, “Optical absorption edge in GaAs and its dependence on electric field,” J. Appl. Phys. 32, 2136 (1961).
  78. T. S. Moss, D. F. Hawkins, “Infrared absorption in gallium arsenide,” Infrared Phys. 1, 111 (1961).
  79. F. Oswald, “Optische Bestimmung der Temperaturabhängigkeit des Bandabstandes von Halblutern des Types AIIIBV,” Z. Naturforsch. 10a, 927 (1955).
  80. A. Perlmutter, “Infrared optical constants of gallium arsenide,” Bull. Amer. Phys. Soc. 2, 66 (1957).
  81. H. R. Phillips, “Interband transitions in groups 4, 3–5, and 2–6 semiconductors,” Phys. Rev. Lett. 8, 59 (1962).
  82. H. R. Phillips, “Optical properties of semiconductors,” Phys. Rev. 129, 1550 (1963).
  83. R. F. Potter, D. L. Stierwalt, “Reststrahlen frequencies for mixed GaAsySb1−ysystem,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).
  84. S. D. Smith, R. E. V. Chaddock, A. R. Goodwin, “Localized modes of substitutional impurities in intermetallic compounds,” Proceedings of the International Conference on the Physics of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).
  85. M. D. Sturge, “Optical absorption of gallium arsenide between 0.6 and 2.75 eV,” Phys. Rev. 127, 768 (1962).
  86. W. K. Subashiev, S. A. Abagyan, “Band structure of GaAsxP1−xcrystals,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964). See also Refs. 15, 39, 46, 49, 51, 55–58, and 61–64.
  87. I. Balslev, “Interband piezo-absorption in GaP,” Proceedings of the International Conference on the Physics of Semiconductors, Kyoto, 1966 (Physical Society of Japan, 1966).
  88. O. Folberth, F. Oswald, “Über die Halbleilereigenschaften von Galliumphosphid,” Z. Naturforsch. 99, 1050 (1954).
  89. D. S. Kleinman, W. G. Spitzer, “Infrared lattice absorption of GaP,” Phys. Rev. 118, 110 (1960).
  90. W. G. Spitzer, M. Gershenzon, C. J. Frosch, D. F. Gibbs, “Optical absorption in n-type gallium phosphide,” J. Phys. Chem. Solids 11, 339 (1959). See also Refs. 15, 36,54, 62, 70, 79, 81, and 82.
  91. R. Barrie, J. T. Edmond, “A study of the conduction band of InSb,” J. Elect. 1, 161 (1955).
  92. E. Blount, J. Callaway, M. Cohen, W. Dumke, J. Phillips, “Infrared absorption of indium antimonide,” Phys. Rev. 101, 563 (1956).
  93. R. G. Breckenridge, B. F. Blunt, W. R. Hosler, H. P. R. Frederikse, J. H. Becker, W. Oshinky, “Electrical and optical properties of intermetallic compounds: I. indium antimonide,” Phys. Rev. 96, 571 (1954).
  94. E. Burstein, “Anomalous optical absorption limit in InSb,” Phys. Rev. 93, 632 (1954).
  95. E. Burstein, C. S. Picus, H. A. Gebbie, F. Blatt, “Magnetic optical band gap effect in InSb,” Phys. Rev. 103, 826 (1956).
  96. E. Bustein, G. S. Picus, H. A. Gebbie, “Cyclotron resonance at infrared frequencies in InSb at room temperature,” Phys. Rev. 103, 825 (1956).
  97. F. A. Cunnel, E. W. Saker, J. T. Edmond, “A note on the semiconducting compound InSb,” Proc. Phys. Soc. 66B, 1115 (1953).
  98. W. P. Dumke, “Indirect transitions at the center of the Brillouin zone with application to InSb, and a possible new effect,” Phys. Rev. 108, 1419 (1957).
  99. H. Y. Fan, G. W. Gobeli, “Absorption edge in indium antimonide,” Bull. Amer. Phys. Soc. 1, 111 (1956).
  100. H. Y. Fan, “Infrared absorption in semiconductor,” Rep. Progr. Phys. 14, 107 (1956).
  101. S. J. Fray, F. A. Johnson, R. H. Jones, “Lattice absorption bands in indium antimonide,” Proc. Phys. Soc. 76, 939 (1960).
  102. G. W. Gobeli, H. Y. Fan, “Infrared absorption and valence band in indium antimonide,” Phys. Rev. 119, 613 (1960).
  103. D. L. Greenway, M. Cardona, “Reflectivity measurements on InSb–In2Te3and InAs–In2Te3alloys and on pure InSb, InAs, and In2Te3,” Proceedings of the International Conference on Semiconductor Physical Exeter 1962 (Physical Society, 1962).
  104. H. J. Hrostowski, G. H. Wheatley, W. F. Flood, “Anomalous optical behavior of InSb,” Phys. Rev. 95, 1683 (1954).
  105. F. A. Johnson, S. J. Jones, R. H. Jones, “Lattice absorption bands in indium antimonide,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).
  106. W. Kaiser, H. Y. Fan, “Infrared absorption of indium antimonide,” Phys. Rev. 98, 966 (1955).
  107. E. O. Kane, “Band structure of indium antimonide,” J. Phys. Chem. Solids 1, 249 (1957).
  108. R. Kaplan, E. D. Palik, R. F. Wallis, S. Iwasa, E. Burstein, Y. Sawada, “Infrared absorption by coupled collective cyclotron excitation-longitudinal-optic phonon modes in InSb,” Phys. Rev. Lett. 18, 159 (1967).
  109. R. J. Keyes, S. Zwerdling, S. Foner, H. H. Kolm, B. Lax, “Infrared cyclotron resonance in Bi, InSb, and InAs with high pulsed magnetic fields,” Phys. Rev. 104, 1804 (1956).
  110. S. W. Kurnich, J. M. Powell, “Optical absorption in pure single crystal InSb at 298° and 78°K,” Phys. Rev. 116, 597 (1959).
  111. B. Lax, “Magneto-spectroscopy in semiconductors” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).
  112. T. S. Moss, A. K. Walton, “Infrared Faraday effect in semiconductors” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).
  113. R. F. Potter, G. G. Kretschmar, “Optical properties of evaporated InSb films,” J. Opt. Soc. Amer. 51, 693 (1961).
  114. R. F. Potter, H. H. Wieder, “Some galvanomagnetic and optical properties of Cu doped InSb films,” J. Solid State Electron. 7, 253 (1964).
  115. R. B. Sanderson, “Far infrared optical properties of indium antimonide,” J. Phys. Chem. Solids 26, 803 (1965).
  116. S. D. Smith, T. S. Moss, K. W. Taylor, “The energy-dependence of electron mass in indium antimonide determined from measurements of the infrared Faraday effect,” J. Phys. Chem. Solids 11, 131 (1959).
  117. S. D. Smith, C. R. Pidgeon, “Ellipticity associated with free carrier Faraday rotation in semiconductors,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).
  118. W. G. Spitzer, H. Y. Fan, “Infrared absorption in indium antimonide,” Phys. Rev. 99, 1893 (1955).
  119. W. G. Spitzer, H. Y. Fan, “Determination of optical constants and carrier effective mass of semiconductors,” Phys. Rev. 106, 882 (1957).
  120. F. Stern, R. M. Talley, “Impurity band in semiconductors with small effective mass,” Phys. Rev. 100, 1638 (1955).
  121. F. Stern, “Calculation of optical absorption in III–V semiconductors” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).
  122. D. L. Stierwalt, “Far infrared lattice bands in indium antimonide,” Proceedings of the International Conference on the Physics of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).
  123. M. Tanenbaum, H. B. Briggs, “Optical properties of indium antimonide,” Phys. Rev. 91, 1561 (1963).
  124. H. Yoshinaga, “Reflectivity of several crystals in the far infrared region between 20 and 200 microns,” Phys. Rev. 100, 753 (1955).
  125. H. Yoshinaga, R. A. Oetjen, “Optical properties of indium antimonide in the region from 20 to 200 microns,” Phys. Rev. 101, 526 (1956). See also Refs. 39, 46, 49, 51, 54–56, 60–64, 70, 79, 81, and 82.
  126. J. R. Dixon, “Optical absorption mechanisms in indium arsenide” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).
  127. F. Stern, R. M. Talley, “Optical absorption in p-type indium arsenide,” Phys. Rev. 108, 158 (1957).
  128. F. Stern, J. R. Dixon, “Narrowing the energy gap in semiconductors by compensation,” J. Appl. Phys. 30, 268 (1959).
  129. R. M. Talley, D. P. Enright, “Photovoltaic effect in InAs,” Phys. Rev. 95, 1092 (1954). See also Refs. 39, 49, 51, 54–58, 61–64, 70, 79, 81, 82, 103, 104, 109, 120, and 122.
  130. M. Cardona, “Optical studies of the band structure of InP,” J. Appl. Phys. 32, 958 (1961).
  131. R. Newman, “Optical properties of n-type InP,” Phys. Rev. 111, 1518 (1958).
  132. D. L. Stierwalt, R. F. Potter, “Infrared spectral emittance of indium phosphide,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964). See also refs. 36, 46, 49, 51, 57, 58, 63, and 79.
  133. R. B. Barnes, “Die ultraroten Eigenfrequenzen der Alkalihalogenidkristalle,” Z. Phys. 75, 723 (1932).
  134. L. R. Blaine, “A far-infrared vacuum grating spectrometer,” J. Res. Nat. Bur. Stand. 67, 207 (1963).
  135. J. E. Eby, K. J. Teegarden, D. B. Dutton, “Ultraviolet absorption of alkali halides,” Phys. Rev. 116, 1099 (1959).
  136. H. Fesefeldt, “Der Einfluss der Temperatur auf die Absorptionsspektra der Alkalihalogenidkristalle,” Z. Phys. 64, 623 (1930).
  137. R. Hilsch, R. W. Pohl, “Die in Luft messbaren ultravioletten Dispersionsfrequenzen der Alkalihalogenide,” Z. Phys. 57, 145 (1929).
  138. R. Hilsch, R. W. Pohl, “Einige Dispersionfrequenzen der Alkalihalogenidkristalle im Schumanngebeit,” Z. Phys. 59, 812 (1930).
  139. A. Kublisky, “Einige optische Konstanten von Alkalihalogenidkristallen,” Ann. Phys. 20, 793 (1934).
  140. W. Martienssen, “Der Einfluss der Temperatur auf die Kante der optischen Eigenabsorption von Alkalihalogeniden,” Nachr. Akad. Wiss. Göttingen, Math.-Phys. K1 11, 257 (1955).
  141. E. G. Schneider, H. M. O’Bryan, “The absorption of ionic crystals in the ultraviolet,” Phys. Rev. 51, 293 (1937).
  142. W. Flechsig, “Zur Lichtabsorption in verfarbten Alkalihalogeniden,” Z. Phys. 36, 605 (1926).
  143. E. Kriger, O. Reinkober, E. Koch-Holm, “Reststrahlen von Mischkristallen,” Ann. Phys. 85, 110 (1928). See also Refs. 134, 136, 138, 139, and 141.
  144. W. Martinssen, “Über Die Excitonenbanden der Alkalihalogenidkristalle,” J. Phys. Chem. Solids 2, 257 (1957).
  145. E. A. Taft, H. R. Philipp, “Photoelectric emission from the valence band of some alkali halides,” J. Phys. Chem. Solids 3, 1 (1959).
  146. K. Teegarden, “Fine structure in the exciton bands of the alkali halides,” Phys. Rev. 108, 660 (1957). See also Refs. 13, 134, 137–139, and 141.
  147. S. S. Ballard, K. A. McCarthy, W. L. Wolfe, “Optical materials for infrared instrumentation,” IRIA Rep. No. 2389–11–S, University of Michigan, April1961.
  148. A. A. Giardina, “Stress-optical study of strontium titanate,” J. Opt. Soc. Amer. 47, 727 (1957).
  149. S. B. Levin, N. J. Field, F. W. Plock, L. Merker, “Some optical properties of strontium titanate crystals,” J. Opt. Soc. Amer. 45, 737 (1955).
  150. J. A. Noland, “Optical absorption of single-crystal strontium titanate,” Phys. Rev. 94, 724 (1954).
  151. C. D. Salzberg, “Infrared transmittance of strontium titanate from room temperature to −180°C,” J. Opt. Soc. Amer. 51, 1149 (1961).
  152. W. G. Spitzer, R. C. Miller, D. A. Kleinman, L. E. Howarth, “Far infrared dielectric dispersion in BaTiO3, SrTiO3, and TiO2,” Phys. Rev. 126, 1710 (1962).
  153. J. S. Blakemore, K. C. Nomura, “Intrinsic optical absorption in tellurium,” Phys. Rev. 127, 1024 (1962).
  154. R. S. Caldwell, H. Y. Fan, “Infrared absorption of tellurium,” Phys. Rev. 94, 1427 (1954).
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  159. J. J. Loferski, “Optical properties in single crystals of tellurium,” Phys. Rev. 87, 905 (1952).
  160. J. J. Loferski, “Infrared crystal properties of single crystals of tellurium,” Phys. Rev. 93, 707 (1954).
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  164. T. S. Moss, “Photoconductivity in the elements,” Proc. Phys. 64A, 590 (1951).
  165. T. S. Moss, “Optical properties of tellurium in the infrared,” Proc. Phys. Soc. 65B, 62 (1952).
  166. L. J. Neuringer, “Effect of pressure on the absorption edge of tellurium,” Phys. Rev. 98, 1193 (1955).
  167. L. J. Neuringer, “Effect of pressure on the infrared absorption of semiconductors,” Phys. Rev. 113, 1495 (1959).
  168. K. C. Nomura, “Optical activity in tellurium,” Phys. Rev. Lett. 5, 500 (1960).
  169. E. K. Plyler, J. J. Ball, “Filters for the infrared region,” J. Opt. Soc. Amer. 42, 266 (1952).
  170. O. P. Rustgi, W. C. Walker, G. L. Weissler, “Optical properties of Sb, Te, and Ti films in the vacuum ultraviolet,” J. Opt. Soc. Amer. 51, 1357 (1961).
  171. E. Rütter, “Die ultrarote Durchlässigkeit von dünnen kathodischen Schichten und organischen Substanzen unterhalp 3 μ,” Z. Phys. 60, 1 (1930).
  172. G. D. Van Dyke, “The optical constants of isolated tellurium crystals,” J. Opt. Soc. Amer. 6, 917 (1922). See also Ref. 100.

1967

P. J. Gielisse et al., “Lattice infrared spectra of boron nitride and boron monophosphide,” Phys. Rev. 155, 1039 (1967).
[CrossRef]

A. Manabe, A. Mitsuishi, H. Yoshinaga, “Infrared lattice reflection spectra of II–VI Compounds,” Jap. J. Appl. Phys. 6, 593 (1967).

R. Kaplan, E. D. Palik, R. F. Wallis, S. Iwasa, E. Burstein, Y. Sawada, “Infrared absorption by coupled collective cyclotron excitation-longitudinal-optic phonon modes in InSb,” Phys. Rev. Lett. 18, 159 (1967).

P. Grosse, M. Lutz, W. Richter, “Nachweis ultrarotaktiver Gitterschwingungen in Tellur,” Solid State Commun. 5, 99 (1967).

1966

R. Geick, C. H. Perry, G. Rupprecht, “Normal modes in hexagonal boron nitride,” Phys. Rev. 146, 543 (1966).
[CrossRef]

S. I. Kovtunenko, V. V. Sobolev, “Reflection Spectra of Ge, InSB, GaSb, InAs, and GaP,” Opt. Spectrosc. 21, 186 (1966).

1965

C. E. Jones, A. R. Hilton, “The depth of mechanical damage in gallium arsenide,” J. Electrochem. Soc. 112, 908 (1965).

L. M. Lambert, “Optical absorption in an electric field in semi-insulating gallium arsenide,” J. Phys. Chem. Solids 26, 1409 (1965).

H. Keller, J. Stuke, “Elektrische und optische Eigenschaften von amorphem Tellur,” Phys. Status Solidi 8, 831 (1965).

R. B. Sanderson, “Far infrared optical properties of indium antimonide,” J. Phys. Chem. Solids 26, 803 (1965).

1964

R. F. Potter, H. H. Wieder, “Some galvanomagnetic and optical properties of Cu doped InSb films,” J. Solid State Electron. 7, 253 (1964).

J. C. Woolley, K. W. Blazey, “Reflectivity spectra of GaSb–InSb and GaAs–InAs alloys,” J. Phys. Chem. Solids 25, 713 (1964). See also Refs. 15, 36, and 39.

1963

D. T. F. Marple, “Effective electron mass in CdTe,” Phys. Rev. 129, 2466 (1963).

E. Loh, “Spectral photoresponse of Si, GaAs, and Ge shallow junction in the region of 1–5 eV,” J. Phys. Chem. Solids 24, 493 (1963).

I. Kudman, L. Vieland, “Absorption edge in degenerate n-type gallium arsenide,” J. Phys. Chem. Solid 24, 967 (1963).

H. R. Phillips, “Optical properties of semiconductors,” Phys. Rev. 129, 1550 (1963).

M. Cardona, “Reflectivity of semiconductors with wurtzite structure,” Phys. Rev. 129, 1068 (1963).

T. M. Bieniewski, S. J. Czyzak, “Refractive indexes of single hexagonal ZnS and CdS crystals,” J. Opt. Soc. Amer. 53, 496 (1963).

J. J. Hopfield, D. G. Thomas, “Theoretical and experimental effects of spatial dispersion on the optical properties of crystals,” Phys. Rev. 132, 563 (1963).

M. Cardona, “Fundamental reflectivity and band structure of ZnTe, CdTe, and HgTe,” Phys. Rev. 131, 98 (1963).

M. Cardona, G. Garbeke, “Absorption of germanium and zinc-blende-type materials at energies higher than the fundamental absorption edge,” J. Appl. Phys. 34, 813 (1963).

M. Tanenbaum, H. B. Briggs, “Optical properties of indium antimonide,” Phys. Rev. 91, 1561 (1963).

L. R. Blaine, “A far-infrared vacuum grating spectrometer,” J. Res. Nat. Bur. Stand. 67, 207 (1963).

1962

W. G. Spitzer, R. C. Miller, D. A. Kleinman, L. E. Howarth, “Far infrared dielectric dispersion in BaTiO3, SrTiO3, and TiO2,” Phys. Rev. 126, 1710 (1962).

J. S. Blakemore, K. C. Nomura, “Intrinsic optical absorption in tellurium,” Phys. Rev. 127, 1024 (1962).

M. D. Sturge, “Optical absorption of gallium arsenide between 0.6 and 2.75 eV,” Phys. Rev. 127, 768 (1962).

H. R. Phillips, “Interband transitions in groups 4, 3–5, and 2–6 semiconductors,” Phys. Rev. Lett. 8, 59 (1962).

M. Hass, B. W. Henvis, “Infrared lattice reflection spectra of III–V compound semiconductors,” J. Phys. Chem. Solids 23, 1099 (1962).

1961

A. Mitsuishi, “Optical properties of CdTe in the far infrared region,” J. Phys. Soc. Jap. 16, 533 (1961).

M. Cardona, “Optical investigations of the band structure of GaSb,” Z. Phys. 161, 99 (1961).

M. Cardona, “Optical determination of the conductron band structure of GaSb,” J. Phys. Chem. Solids 17, 336 (1961).

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, “Lattice absorption in gallium arsenide,” J. Appl. Phys. 32,2102S (1961).

T. S. Moss, “Optical absorption edge in GaAs and its dependence on electric field,” J. Appl. Phys. 32, 2136 (1961).

T. S. Moss, D. F. Hawkins, “Infrared absorption in gallium arsenide,” Infrared Phys. 1, 111 (1961).

M. Cardona, “Fundamental reflectivity spectrum of semiconductors with zinc-blende structures,” J. Appl. Phys. 32, 215 (1961).

N. K. Kisileva, N. N. Pribytkova, “Determination of the optical constants of Ge and CdTe by the reflection method,” Opt. Spectrosc. 10, 133 (1961).

H. Shenker, “Low-field breakdown, non-ohmic conductivity, and photoconductivity of CdS at low temperature,” J. Phys. Chem. Solids 19, 1 (1961).

M. S. Brodin, “Optical properties of CdS monocrystals,” Sov. Phys.–Solid State 2, 1926 (1961).

C. D. Salzberg, “Infrared transmittance of strontium titanate from room temperature to −180°C,” J. Opt. Soc. Amer. 51, 1149 (1961).

O. P. Rustgi, W. C. Walker, G. L. Weissler, “Optical properties of Sb, Te, and Ti films in the vacuum ultraviolet,” J. Opt. Soc. Amer. 51, 1357 (1961).

M. Cardona, “Optical studies of the band structure of InP,” J. Appl. Phys. 32, 958 (1961).

R. F. Potter, G. G. Kretschmar, “Optical properties of evaporated InSb films,” J. Opt. Soc. Amer. 51, 693 (1961).

1960

S. J. Fray, F. A. Johnson, R. H. Jones, “Lattice absorption bands in indium antimonide,” Proc. Phys. Soc. 76, 939 (1960).

G. W. Gobeli, H. Y. Fan, “Infrared absorption and valence band in indium antimonide,” Phys. Rev. 119, 613 (1960).

K. C. Nomura, “Optical activity in tellurium,” Phys. Rev. Lett. 5, 500 (1960).

A. B. Francis, A. L. Carlson, “Cadmium sulphide infrared optical material,” J. Opt. Soc. Amer. 50, 118 (1960).

J. J. Hopfield, D. G. Thomas, “Photon momentum effects in the magneto-optics of excitons,” Phys. Rev. Lett. 4, 357 (1960).

R. Williams, “Electric field light absorption in CdS,” Phys. Rev. 117, 1487 (1960).

P. W. Davis, T. S. Shilliday, “Some optical properties of cadmium telluride,” Phys. Rev. 118, 1020 (1960).

D. S. Kleinman, W. G. Spitzer, “Infrared lattice absorption of GaP,” Phys. Rev. 118, 110 (1960).

K. J. Planker, E. Kauer, “Bestimmung der effektiven Masse freier Ladungsträger in Halbleitern aus der Ultrarotabsorption,” Z. Angew. Phys. 12, 425 (1960). See also Refs. 28 and 29.

1959

D. F. Edwards, G. S. Hayne, “Optical properties of gallium antimonide,” J. Opt. Soc. Amer. 49, 415 (1959).

W. G. Spitzer, M. Gershenzon, C. J. Frosch, D. F. Gibbs, “Optical absorption in n-type gallium phosphide,” J. Phys. Chem. Solids 11, 339 (1959). See also Refs. 15, 36,54, 62, 70, 79, 81, and 82.

R. Braunstein, “Intervalance band transitions in gallium arsenide,” J. Phys. Chem. Solids 8, 280 (1959).

D. G. Thomas, J. J. Hopfield, “Exciton spectrum of cadmium sulphide,” Phys. Rev. 116, 573 (1959).

S. J. Czyzak, R. C. Crane, T. M. Bieniewski, “Dichroism in essentially pure and activated cadmium sulphide single crystals,” J. Opt. Soc. Amer. 49, 485 (1959).

D. L. Dexter, “Optical investigations of semiconductors at the University of Rochester,” J. Phys. Chem. Solids 8, 473 (1959).

A. K. Edwards, T. E. Slykhouse, H. G. Drickamer, “The effect of pressure on zinc blende and wurtzite structures,” J. Phys. Chem. Solids 11, 140 (1959).

R. J. Collins, “Mechanism and defect responsible for edge emission in CdS,” J. Appl. Phys. 30, 1135 (1959).

L. J. Neuringer, “Effect of pressure on the infrared absorption of semiconductors,” Phys. Rev. 113, 1495 (1959).

E. A. Taft, H. R. Philipp, “Photoelectric emission from the valence band of some alkali halides,” J. Phys. Chem. Solids 3, 1 (1959).

S. W. Kurnich, J. M. Powell, “Optical absorption in pure single crystal InSb at 298° and 78°K,” Phys. Rev. 116, 597 (1959).

S. D. Smith, T. S. Moss, K. W. Taylor, “The energy-dependence of electron mass in indium antimonide determined from measurements of the infrared Faraday effect,” J. Phys. Chem. Solids 11, 131 (1959).

F. Stern, J. R. Dixon, “Narrowing the energy gap in semiconductors by compensation,” J. Appl. Phys. 30, 268 (1959).

J. E. Eby, K. J. Teegarden, D. B. Dutton, “Ultraviolet absorption of alkali halides,” Phys. Rev. 116, 1099 (1959).

1958

R. Newman, “Optical properties of n-type InP,” Phys. Rev. 111, 1518 (1958).

D. Dutton, “Anisotropy of edge luminescence in cadmium sulphide,” J. Phys. Chem. Solids 6, 101 (1958).

A. Mitsuishi, H. Yoshinaga, S. Fujita, “Far-infrared absorption of sulfides, selenides, and tellurides of zinc and cadmium,” J. Phys. Soc. Jap. 13, 1235 (1958).

C. Barcus, A. Perlmutter, J. Callaway, “Effective mass of electrons in gallium arsenide,” Phys. Rev. 111, 167 (1958).

R. Braunstein, L. Magid, “Optical absorption in p-type gallium arsenide,” Phys. Rev. 111, 480 (1958).

G. Picus, E. Burstein, B. W. Henvis, M. Hass, “Infrared lattice vibration studies of polar character in compound semiconductors,” J. Phys. Chem. Solids 8, 282 (1958).

A. K. Ramdas, H. Y. Fan, “Infrared absorption in gallium antimonide,” Bull. Amer. Phys. Soc. 3, 121 (1958).

H. J. Hrostowski, C. S. Fuller, “Extension of infrared spectra of III–V compounds by lithium diffusion,” J. Phys. Chem. Solids 4, 157 (1958).

1957

G. S. Picus, E. Burstein, B. W. Henvis, “Infrared lattice vibration studies of polar character in compound semiconductors,” Bull. Amer. Phys. Soc. 2, 66 (1957).

A. Perlmutter, “Infrared optical constants of gallium arsenide,” Bull. Amer. Phys. Soc. 2, 66 (1957).

S. J. Czyzak, W. M. Baker, R. C. Crane, J. B. Howe, “Refractive indexes of single synthetic zinc sulphide and cadmium sulphide crystal,” J. Opt. Soc. Amer. 47, 240 (1957).

F. Stern, R. M. Talley, “Optical absorption in p-type indium arsenide,” Phys. Rev. 108, 158 (1957).

W. G. Spitzer, H. Y. Fan, “Determination of optical constants and carrier effective mass of semiconductors,” Phys. Rev. 106, 882 (1957).

E. O. Kane, “Band structure of indium antimonide,” J. Phys. Chem. Solids 1, 249 (1957).

W. P. Dumke, “Indirect transitions at the center of the Brillouin zone with application to InSb, and a possible new effect,” Phys. Rev. 108, 1419 (1957).

K. Teegarden, “Fine structure in the exciton bands of the alkali halides,” Phys. Rev. 108, 660 (1957). See also Refs. 13, 134, 137–139, and 141.

A. A. Giardina, “Stress-optical study of strontium titanate,” J. Opt. Soc. Amer. 47, 727 (1957).

W. Martinssen, “Über Die Excitonenbanden der Alkalihalogenidkristalle,” J. Phys. Chem. Solids 2, 257 (1957).

1956

H. Y. Fan, G. W. Gobeli, “Absorption edge in indium antimonide,” Bull. Amer. Phys. Soc. 1, 111 (1956).

H. Y. Fan, “Infrared absorption in semiconductor,” Rep. Progr. Phys. 14, 107 (1956).

E. Burstein, C. S. Picus, H. A. Gebbie, F. Blatt, “Magnetic optical band gap effect in InSb,” Phys. Rev. 103, 826 (1956).

E. Bustein, G. S. Picus, H. A. Gebbie, “Cyclotron resonance at infrared frequencies in InSb at room temperature,” Phys. Rev. 103, 825 (1956).

R. J. Keyes, S. Zwerdling, S. Foner, H. H. Kolm, B. Lax, “Infrared cyclotron resonance in Bi, InSb, and InAs with high pulsed magnetic fields,” Phys. Rev. 104, 1804 (1956).

H. Yoshinaga, R. A. Oetjen, “Optical properties of indium antimonide in the region from 20 to 200 microns,” Phys. Rev. 101, 526 (1956). See also Refs. 39, 46, 49, 51, 54–56, 60–64, 70, 79, 81, and 82.

E. F. Gross, A. A. Kaplianskii, B. V. Novikov, “Exciton structure of the spectral curves of the photoconductive effect in crystals,” Sov. Phys.–Doklady 1, 582 (1956).

C. Z. van Doorn, D. de Nobel, “Luminescence, transmission, and width of the energy gap of CdTe single crystals,” Physica 22, 338 (1956).

E. Blount, J. Callaway, M. Cohen, W. Dumke, J. Phillips, “Infrared absorption of indium antimonide,” Phys. Rev. 101, 563 (1956).

1955

R. Barrie, J. T. Edmond, “A study of the conduction band of InSb,” J. Elect. 1, 161 (1955).

F. Oswald, “Optische Bestimmung der Temperaturabhängigkeit des Bandabstandes von Halblutern des Types AIIIBV,” Z. Naturforsch. 10a, 927 (1955).

V. Roberts, G. E. Quarrington, “Accurate measurements of absorption in indium antimonide and gallium antimonide,” J. Elec. 1, 152 (1955).

J. F. Hall, W. F. C. Ferguson, “Optical properties of cadmium sulphide and zinc sulphide from 0.6–14 microns,” J. Opt. Soc. Amer. 45, 715 (1955).

D. C. Reynolds, S. J. Czyzak, R. C. Allen, C. C. Reynolds, “Properties of single cadmium sulphide crystals,” J. Opt. Soc. Amer. 45, 136 (1955).

L. R. Furlong, C. F. Ravilious, “Low-temperature luminescence and absorption of CdS,” Phys. Rev. 98, 954 (1955).

H. Yoshinaga, “Reflectivity of several crystals in the far infrared region between 20 and 200 microns,” Phys. Rev. 100, 753 (1955).

W. Martienssen, “Der Einfluss der Temperatur auf die Kante der optischen Eigenabsorption von Alkalihalogeniden,” Nachr. Akad. Wiss. Göttingen, Math.-Phys. K1 11, 257 (1955).

F. Stern, R. M. Talley, “Impurity band in semiconductors with small effective mass,” Phys. Rev. 100, 1638 (1955).

W. G. Spitzer, H. Y. Fan, “Infrared absorption in indium antimonide,” Phys. Rev. 99, 1893 (1955).

W. Kaiser, H. Y. Fan, “Infrared absorption of indium antimonide,” Phys. Rev. 98, 966 (1955).

S. B. Levin, N. J. Field, F. W. Plock, L. Merker, “Some optical properties of strontium titanate crystals,” J. Opt. Soc. Amer. 45, 737 (1955).

L. J. Neuringer, “Effect of pressure on the absorption edge of tellurium,” Phys. Rev. 98, 1193 (1955).

1954

J. A. Noland, “Optical absorption of single-crystal strontium titanate,” Phys. Rev. 94, 724 (1954).

R. S. Caldwell, H. Y. Fan, “Infrared absorption of tellurium,” Phys. Rev. 94, 1427 (1954).

P. A. Hartig, J. J. Loferski, “Infrared index of refraction of tellurium crystals,” J. Opt. Soc. Amer. 44, 17 (1954).

J. J. Loferski, “Infrared crystal properties of single crystals of tellurium,” Phys. Rev. 93, 707 (1954).

H. J. Hrostowski, G. H. Wheatley, W. F. Flood, “Anomalous optical behavior of InSb,” Phys. Rev. 95, 1683 (1954).

R. M. Talley, D. P. Enright, “Photovoltaic effect in InAs,” Phys. Rev. 95, 1092 (1954). See also Refs. 39, 49, 51, 54–58, 61–64, 70, 79, 81, 82, 103, 104, 109, 120, and 122.

J. Gottesman, W. F. C. Ferguson, “Optical properties of thin films of cadmium sulphide,” J. Opt. Soc. Amer. 44, 368 (1954).

L. R. Furlong, “Low temperature luminescence of cadmium sulphide,” Phys. Rev. 95, 1086 (1954).

D. A. Jenny, R. H. Bube, “Superconducting CdTe,” Phys. Rev. 96, 1190 (1954).

H. Welker, “Semiconducting intermetallic compounds,” Physica 20, 893 (1954).

F. Oswald, R. Schade, “Über die Bestimmung der optischen Konstanten von Halbleitern des Typus AIIIBVim Infraroten,” Z. Naturforsch. 9a, 611 (1954).

F. A. Cunnell, T. J. Edmond, J. C. Richards, “Measurements on some semiconducting compounds with the zinc-blende structure,” Proc. Phys. Soc. 67B, 849 (1954).

R. G. Breckenridge, B. F. Blunt, W. R. Hosler, H. P. R. Frederikse, J. H. Becker, W. Oshinky, “Electrical and optical properties of intermetallic compounds: I. indium antimonide,” Phys. Rev. 96, 571 (1954).

E. Burstein, “Anomalous optical absorption limit in InSb,” Phys. Rev. 93, 632 (1954).

O. Folberth, F. Oswald, “Über die Halbleilereigenschaften von Galliumphosphid,” Z. Naturforsch. 99, 1050 (1954).

1953

C. C. Klick, “Luminescence and photoconductivity in cadmium sulphide at the absorption edge,” Phys. Rev. 89, 274 (1953).

F. A. Cunnel, E. W. Saker, J. T. Edmond, “A note on the semiconducting compound InSb,” Proc. Phys. Soc. 66B, 1115 (1953).

1952

T. S. Moss, “Optical properties of tellurium in the infrared,” Proc. Phys. Soc. 65B, 62 (1952).

E. K. Plyler, J. J. Ball, “Filters for the infrared region,” J. Opt. Soc. Amer. 42, 266 (1952).

J. J. Loferski, “Optical properties in single crystals of tellurium,” Phys. Rev. 87, 905 (1952).

S. J. Czyzak, D. J. Craig, C. E. McCain, D. C. Reynolds, “Single synthetic cadmium sulphide crystals,” J. Appl. Phys. 23, 932 (1952).

1951

T. S. Moss, “Photoconductivity in the elements,” Proc. Phys. 64A, 590 (1951).

J. J. Loferski, P. H. Miller, “Infrared properties of tellurium,” Phys. Rev. 83, 876 (1951).

1950

T. S. Moss, “Changes in the activation energy of tellurium,” Phys. Rev. 79, 1011 (1950).

1949

T. S. Moss, “Infrared photoconductivity in layers of tellurium and arsenic,” Proc. Phys. Soc. 62A, 264 (1949).

1947

R. Frerichs, “The photo-conductivity of incomplete phosphors,” Phys. Rev. 72, 594 (1947).

1937

E. G. Schneider, H. M. O’Bryan, “The absorption of ionic crystals in the ultraviolet,” Phys. Rev. 51, 293 (1937).

1934

A. Kublisky, “Einige optische Konstanten von Alkalihalogenidkristallen,” Ann. Phys. 20, 793 (1934).

1932

R. B. Barnes, “Die ultraroten Eigenfrequenzen der Alkalihalogenidkristalle,” Z. Phys. 75, 723 (1932).

1930

R. Hilsch, R. W. Pohl, “Einige Dispersionfrequenzen der Alkalihalogenidkristalle im Schumanngebeit,” Z. Phys. 59, 812 (1930).

H. Fesefeldt, “Der Einfluss der Temperatur auf die Absorptionsspektra der Alkalihalogenidkristalle,” Z. Phys. 64, 623 (1930).

E. Rütter, “Die ultrarote Durchlässigkeit von dünnen kathodischen Schichten und organischen Substanzen unterhalp 3 μ,” Z. Phys. 60, 1 (1930).

1929

R. Hilsch, R. W. Pohl, “Die in Luft messbaren ultravioletten Dispersionsfrequenzen der Alkalihalogenide,” Z. Phys. 57, 145 (1929).

1928

E. Kriger, O. Reinkober, E. Koch-Holm, “Reststrahlen von Mischkristallen,” Ann. Phys. 85, 110 (1928). See also Refs. 134, 136, 138, 139, and 141.

1926

W. Flechsig, “Zur Lichtabsorption in verfarbten Alkalihalogeniden,” Z. Phys. 36, 605 (1926).

1925

R. F. Miller, “The optical constants of crystals of selenium and tellurium for wavelengths from 3000 to 5000 angstroms,” J. Opt. Soc. Amer. 10, 621 (1925).

1922

G. D. Van Dyke, “The optical constants of isolated tellurium crystals,” J. Opt. Soc. Amer. 6, 917 (1922). See also Ref. 100.

1912

E. T. Allen, J. L. Crenshaw, H. E. Merwin, “The sulphides of zinc, cadmium, and mercury; their crystalline forms and genetic conditions,” Amer. J. Sci. 34, 341 (1912).

1891

R. Lorenz, “Mineralsynthetische Versuche, über die Einwirkung trockenen Schwefelwasserstoffs auf einige Metalle,” Chem. Ber. 24, 1509 (1891).

Abagyan, S. A.

W. K. Subashiev, S. A. Abagyan, “Band structure of GaAsxP1−xcrystals,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964). See also Refs. 15, 39, 46, 49, 51, 55–58, and 61–64.

Abraham, A.

J. Tauc, A. Abraham, “Reflection spectra of semiconductors with diamond and sphalerite structures,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

Allen, E. T.

E. T. Allen, J. L. Crenshaw, H. E. Merwin, “The sulphides of zinc, cadmium, and mercury; their crystalline forms and genetic conditions,” Amer. J. Sci. 34, 341 (1912).

Allen, R. C.

D. C. Reynolds, S. J. Czyzak, R. C. Allen, C. C. Reynolds, “Properties of single cadmium sulphide crystals,” J. Opt. Soc. Amer. 45, 136 (1955).

Baker, W. M.

S. J. Czyzak, W. M. Baker, R. C. Crane, J. B. Howe, “Refractive indexes of single synthetic zinc sulphide and cadmium sulphide crystal,” J. Opt. Soc. Amer. 47, 240 (1957).

Balkanski, M.

M. Balkanski, J. M. Besson, R. LeToullec, “Dispersion curves of phonons in hexagonal cadmium sulphide obtained by infrared spectroscopy,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

Ball, J. J.

E. K. Plyler, J. J. Ball, “Filters for the infrared region,” J. Opt. Soc. Amer. 42, 266 (1952).

Ballard, S. S.

S. S. Ballard, K. A. McCarthy, W. L. Wolfe, “Optical materials for infrared instrumentation,” IRIA Rep. No. 2389–11–S, University of Michigan, April1961.

Balslev, I.

I. Balslev, “Interband piezo-absorption in GaP,” Proceedings of the International Conference on the Physics of Semiconductors, Kyoto, 1966 (Physical Society of Japan, 1966).

S. Iwasa, I. Balslev, E. Burstein, “The fundamental infrared lattice vibration spectra of GaAs,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

Barcus, C.

C. Barcus, A. Perlmutter, J. Callaway, “Effective mass of electrons in gallium arsenide,” Phys. Rev. 111, 167 (1958).

Barnes, R. B.

R. B. Barnes, “Die ultraroten Eigenfrequenzen der Alkalihalogenidkristalle,” Z. Phys. 75, 723 (1932).

Barrie, R.

R. Barrie, J. T. Edmond, “A study of the conduction band of InSb,” J. Elect. 1, 161 (1955).

Bassani, F.

F. Bassani, D. L. Greenway, G. Fischer, “Investigation of the band structure of the layer compounds GaAs and GaSe,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

Becker, J. H.

R. G. Breckenridge, B. F. Blunt, W. R. Hosler, H. P. R. Frederikse, J. H. Becker, W. Oshinky, “Electrical and optical properties of intermetallic compounds: I. indium antimonide,” Phys. Rev. 96, 571 (1954).

Besson, J. M.

M. Balkanski, J. M. Besson, R. LeToullec, “Dispersion curves of phonons in hexagonal cadmium sulphide obtained by infrared spectroscopy,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

Bieniewski, T. M.

T. M. Bieniewski, S. J. Czyzak, “Refractive indexes of single hexagonal ZnS and CdS crystals,” J. Opt. Soc. Amer. 53, 496 (1963).

S. J. Czyzak, R. C. Crane, T. M. Bieniewski, “Dichroism in essentially pure and activated cadmium sulphide single crystals,” J. Opt. Soc. Amer. 49, 485 (1959).

Blaine, L. R.

L. R. Blaine, “A far-infrared vacuum grating spectrometer,” J. Res. Nat. Bur. Stand. 67, 207 (1963).

Blakemore, J. S.

J. S. Blakemore, K. C. Nomura, “Intrinsic optical absorption in tellurium,” Phys. Rev. 127, 1024 (1962).

Blatt, F.

E. Burstein, C. S. Picus, H. A. Gebbie, F. Blatt, “Magnetic optical band gap effect in InSb,” Phys. Rev. 103, 826 (1956).

Blazey, K. W.

J. C. Woolley, K. W. Blazey, “Reflectivity spectra of GaSb–InSb and GaAs–InAs alloys,” J. Phys. Chem. Solids 25, 713 (1964). See also Refs. 15, 36, and 39.

Blount, E.

E. Blount, J. Callaway, M. Cohen, W. Dumke, J. Phillips, “Infrared absorption of indium antimonide,” Phys. Rev. 101, 563 (1956).

Blunt, B. F.

R. G. Breckenridge, B. F. Blunt, W. R. Hosler, H. P. R. Frederikse, J. H. Becker, W. Oshinky, “Electrical and optical properties of intermetallic compounds: I. indium antimonide,” Phys. Rev. 96, 571 (1954).

Braunstein, R.

R. Braunstein, “Intervalance band transitions in gallium arsenide,” J. Phys. Chem. Solids 8, 280 (1959).

R. Braunstein, L. Magid, “Optical absorption in p-type gallium arsenide,” Phys. Rev. 111, 480 (1958).

Breckenridge, R. G.

R. G. Breckenridge, B. F. Blunt, W. R. Hosler, H. P. R. Frederikse, J. H. Becker, W. Oshinky, “Electrical and optical properties of intermetallic compounds: I. indium antimonide,” Phys. Rev. 96, 571 (1954).

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M. Tanenbaum, H. B. Briggs, “Optical properties of indium antimonide,” Phys. Rev. 91, 1561 (1963).

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M. S. Brodin, “Optical properties of CdS monocrystals,” Sov. Phys.–Solid State 2, 1926 (1961).

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D. A. Jenny, R. H. Bube, “Superconducting CdTe,” Phys. Rev. 96, 1190 (1954).

Burstein, E.

R. Kaplan, E. D. Palik, R. F. Wallis, S. Iwasa, E. Burstein, Y. Sawada, “Infrared absorption by coupled collective cyclotron excitation-longitudinal-optic phonon modes in InSb,” Phys. Rev. Lett. 18, 159 (1967).

G. Picus, E. Burstein, B. W. Henvis, M. Hass, “Infrared lattice vibration studies of polar character in compound semiconductors,” J. Phys. Chem. Solids 8, 282 (1958).

G. S. Picus, E. Burstein, B. W. Henvis, “Infrared lattice vibration studies of polar character in compound semiconductors,” Bull. Amer. Phys. Soc. 2, 66 (1957).

E. Burstein, C. S. Picus, H. A. Gebbie, F. Blatt, “Magnetic optical band gap effect in InSb,” Phys. Rev. 103, 826 (1956).

E. Burstein, “Anomalous optical absorption limit in InSb,” Phys. Rev. 93, 632 (1954).

S. Iwasa, I. Balslev, E. Burstein, “The fundamental infrared lattice vibration spectra of GaAs,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

Bustein, E.

E. Bustein, G. S. Picus, H. A. Gebbie, “Cyclotron resonance at infrared frequencies in InSb at room temperature,” Phys. Rev. 103, 825 (1956).

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R. S. Caldwell, H. Y. Fan, “Infrared absorption of tellurium,” Phys. Rev. 94, 1427 (1954).

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C. Barcus, A. Perlmutter, J. Callaway, “Effective mass of electrons in gallium arsenide,” Phys. Rev. 111, 167 (1958).

E. Blount, J. Callaway, M. Cohen, W. Dumke, J. Phillips, “Infrared absorption of indium antimonide,” Phys. Rev. 101, 563 (1956).

Cardona, M.

M. Cardona, “Reflectivity of semiconductors with wurtzite structure,” Phys. Rev. 129, 1068 (1963).

M. Cardona, “Fundamental reflectivity and band structure of ZnTe, CdTe, and HgTe,” Phys. Rev. 131, 98 (1963).

M. Cardona, G. Garbeke, “Absorption of germanium and zinc-blende-type materials at energies higher than the fundamental absorption edge,” J. Appl. Phys. 34, 813 (1963).

M. Cardona, “Optical determination of the conductron band structure of GaSb,” J. Phys. Chem. Solids 17, 336 (1961).

M. Cardona, “Fundamental reflectivity spectrum of semiconductors with zinc-blende structures,” J. Appl. Phys. 32, 215 (1961).

M. Cardona, “Optical investigations of the band structure of GaSb,” Z. Phys. 161, 99 (1961).

M. Cardona, “Optical studies of the band structure of InP,” J. Appl. Phys. 32, 958 (1961).

M. Cardona, G. Harbeke, “Optical properties of wurtzite-type crystals in the fundamental absorption region,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

M. Cardona, “Temperature dependence of the refractive index and the polarizability of free carriers in some III–V semiconductors,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

D. L. Greenway, M. Cardona, “Reflectivity measurements on InSb–In2Te3and InAs–In2Te3alloys and on pure InSb, InAs, and In2Te3,” Proceedings of the International Conference on Semiconductor Physical Exeter 1962 (Physical Society, 1962).

Carlson, A. L.

A. B. Francis, A. L. Carlson, “Cadmium sulphide infrared optical material,” J. Opt. Soc. Amer. 50, 118 (1960).

Chaddock, R. E. V.

S. D. Smith, R. E. V. Chaddock, A. R. Goodwin, “Localized modes of substitutional impurities in intermetallic compounds,” Proceedings of the International Conference on the Physics of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

Cochran, W.

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, “Lattice absorption in gallium arsenide,” J. Appl. Phys. 32,2102S (1961).

F. A. Johnson, W. Cochran, “The application of the shell model to infrared lattice absorption bands of semiconductors,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

Cohen, M.

E. Blount, J. Callaway, M. Cohen, W. Dumke, J. Phillips, “Infrared absorption of indium antimonide,” Phys. Rev. 101, 563 (1956).

Collins, R. J.

R. J. Collins, “Mechanism and defect responsible for edge emission in CdS,” J. Appl. Phys. 30, 1135 (1959).

Craig, D. J.

S. J. Czyzak, D. J. Craig, C. E. McCain, D. C. Reynolds, “Single synthetic cadmium sulphide crystals,” J. Appl. Phys. 23, 932 (1952).

Crane, R. C.

S. J. Czyzak, R. C. Crane, T. M. Bieniewski, “Dichroism in essentially pure and activated cadmium sulphide single crystals,” J. Opt. Soc. Amer. 49, 485 (1959).

S. J. Czyzak, W. M. Baker, R. C. Crane, J. B. Howe, “Refractive indexes of single synthetic zinc sulphide and cadmium sulphide crystal,” J. Opt. Soc. Amer. 47, 240 (1957).

Crenshaw, J. L.

E. T. Allen, J. L. Crenshaw, H. E. Merwin, “The sulphides of zinc, cadmium, and mercury; their crystalline forms and genetic conditions,” Amer. J. Sci. 34, 341 (1912).

Cunnel, F. A.

F. A. Cunnel, E. W. Saker, J. T. Edmond, “A note on the semiconducting compound InSb,” Proc. Phys. Soc. 66B, 1115 (1953).

Cunnell, F. A.

F. A. Cunnell, T. J. Edmond, J. C. Richards, “Measurements on some semiconducting compounds with the zinc-blende structure,” Proc. Phys. Soc. 67B, 849 (1954).

Czyzak, S. J.

T. M. Bieniewski, S. J. Czyzak, “Refractive indexes of single hexagonal ZnS and CdS crystals,” J. Opt. Soc. Amer. 53, 496 (1963).

S. J. Czyzak, R. C. Crane, T. M. Bieniewski, “Dichroism in essentially pure and activated cadmium sulphide single crystals,” J. Opt. Soc. Amer. 49, 485 (1959).

S. J. Czyzak, W. M. Baker, R. C. Crane, J. B. Howe, “Refractive indexes of single synthetic zinc sulphide and cadmium sulphide crystal,” J. Opt. Soc. Amer. 47, 240 (1957).

D. C. Reynolds, S. J. Czyzak, R. C. Allen, C. C. Reynolds, “Properties of single cadmium sulphide crystals,” J. Opt. Soc. Amer. 45, 136 (1955).

S. J. Czyzak, D. J. Craig, C. E. McCain, D. C. Reynolds, “Single synthetic cadmium sulphide crystals,” J. Appl. Phys. 23, 932 (1952).

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P. W. Davis, T. S. Shilliday, “Some optical properties of cadmium telluride,” Phys. Rev. 118, 1020 (1960).

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C. Z. van Doorn, D. de Nobel, “Luminescence, transmission, and width of the energy gap of CdTe single crystals,” Physica 22, 338 (1956).

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D. L. Dexter, “Optical investigations of semiconductors at the University of Rochester,” J. Phys. Chem. Solids 8, 473 (1959).

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F. Stern, J. R. Dixon, “Narrowing the energy gap in semiconductors by compensation,” J. Appl. Phys. 30, 268 (1959).

J. R. Dixon, “Optical absorption mechanisms in indium arsenide” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

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A. K. Edwards, T. E. Slykhouse, H. G. Drickamer, “The effect of pressure on zinc blende and wurtzite structures,” J. Phys. Chem. Solids 11, 140 (1959).

Dumke, W.

E. Blount, J. Callaway, M. Cohen, W. Dumke, J. Phillips, “Infrared absorption of indium antimonide,” Phys. Rev. 101, 563 (1956).

Dumke, W. P.

W. P. Dumke, “Indirect transitions at the center of the Brillouin zone with application to InSb, and a possible new effect,” Phys. Rev. 108, 1419 (1957).

Dutton, D.

D. Dutton, “Anisotropy of edge luminescence in cadmium sulphide,” J. Phys. Chem. Solids 6, 101 (1958).

Dutton, D. B.

J. E. Eby, K. J. Teegarden, D. B. Dutton, “Ultraviolet absorption of alkali halides,” Phys. Rev. 116, 1099 (1959).

Eby, J. E.

J. E. Eby, K. J. Teegarden, D. B. Dutton, “Ultraviolet absorption of alkali halides,” Phys. Rev. 116, 1099 (1959).

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R. Barrie, J. T. Edmond, “A study of the conduction band of InSb,” J. Elect. 1, 161 (1955).

F. A. Cunnel, E. W. Saker, J. T. Edmond, “A note on the semiconducting compound InSb,” Proc. Phys. Soc. 66B, 1115 (1953).

Edmond, T. J.

F. A. Cunnell, T. J. Edmond, J. C. Richards, “Measurements on some semiconducting compounds with the zinc-blende structure,” Proc. Phys. Soc. 67B, 849 (1954).

Edwards, A. K.

A. K. Edwards, T. E. Slykhouse, H. G. Drickamer, “The effect of pressure on zinc blende and wurtzite structures,” J. Phys. Chem. Solids 11, 140 (1959).

Edwards, D. F.

D. F. Edwards, G. S. Hayne, “Optical properties of gallium antimonide,” J. Opt. Soc. Amer. 49, 415 (1959).

Ehrenreich, H.

H. Ehrenreich, H. R. Phillip, “Optical properties of semiconductors in the ultraviolet,” Proceedings of the International Conference in Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

Enright, D. P.

R. M. Talley, D. P. Enright, “Photovoltaic effect in InAs,” Phys. Rev. 95, 1092 (1954). See also Refs. 39, 49, 51, 54–58, 61–64, 70, 79, 81, 82, 103, 104, 109, 120, and 122.

Fan, H. Y.

G. W. Gobeli, H. Y. Fan, “Infrared absorption and valence band in indium antimonide,” Phys. Rev. 119, 613 (1960).

A. K. Ramdas, H. Y. Fan, “Infrared absorption in gallium antimonide,” Bull. Amer. Phys. Soc. 3, 121 (1958).

W. G. Spitzer, H. Y. Fan, “Determination of optical constants and carrier effective mass of semiconductors,” Phys. Rev. 106, 882 (1957).

H. Y. Fan, “Infrared absorption in semiconductor,” Rep. Progr. Phys. 14, 107 (1956).

H. Y. Fan, G. W. Gobeli, “Absorption edge in indium antimonide,” Bull. Amer. Phys. Soc. 1, 111 (1956).

W. Kaiser, H. Y. Fan, “Infrared absorption of indium antimonide,” Phys. Rev. 98, 966 (1955).

W. G. Spitzer, H. Y. Fan, “Infrared absorption in indium antimonide,” Phys. Rev. 99, 1893 (1955).

R. S. Caldwell, H. Y. Fan, “Infrared absorption of tellurium,” Phys. Rev. 94, 1427 (1954).

E. J. Johnson, I. Filinski, H. Y. Fan, “Absorption and emission of excitons and impurities in GaSb,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

Ferguson, W. F. C.

J. F. Hall, W. F. C. Ferguson, “Optical properties of cadmium sulphide and zinc sulphide from 0.6–14 microns,” J. Opt. Soc. Amer. 45, 715 (1955).

J. Gottesman, W. F. C. Ferguson, “Optical properties of thin films of cadmium sulphide,” J. Opt. Soc. Amer. 44, 368 (1954).

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H. Fesefeldt, “Der Einfluss der Temperatur auf die Absorptionsspektra der Alkalihalogenidkristalle,” Z. Phys. 64, 623 (1930).

Field, N. J.

S. B. Levin, N. J. Field, F. W. Plock, L. Merker, “Some optical properties of strontium titanate crystals,” J. Opt. Soc. Amer. 45, 737 (1955).

Filinski, I.

E. J. Johnson, I. Filinski, H. Y. Fan, “Absorption and emission of excitons and impurities in GaSb,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

Fischer, G.

F. Bassani, D. L. Greenway, G. Fischer, “Investigation of the band structure of the layer compounds GaAs and GaSe,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

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W. Flechsig, “Zur Lichtabsorption in verfarbten Alkalihalogeniden,” Z. Phys. 36, 605 (1926).

Flood, W. F.

H. J. Hrostowski, G. H. Wheatley, W. F. Flood, “Anomalous optical behavior of InSb,” Phys. Rev. 95, 1683 (1954).

Folberth, O.

O. Folberth, F. Oswald, “Über die Halbleilereigenschaften von Galliumphosphid,” Z. Naturforsch. 99, 1050 (1954).

Foner, S.

R. J. Keyes, S. Zwerdling, S. Foner, H. H. Kolm, B. Lax, “Infrared cyclotron resonance in Bi, InSb, and InAs with high pulsed magnetic fields,” Phys. Rev. 104, 1804 (1956).

Francis, A. B.

A. B. Francis, A. L. Carlson, “Cadmium sulphide infrared optical material,” J. Opt. Soc. Amer. 50, 118 (1960).

Fray, S. J.

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, “Lattice absorption in gallium arsenide,” J. Appl. Phys. 32,2102S (1961).

S. J. Fray, F. A. Johnson, R. H. Jones, “Lattice absorption bands in indium antimonide,” Proc. Phys. Soc. 76, 939 (1960).

Frederikse, H. P. R.

R. G. Breckenridge, B. F. Blunt, W. R. Hosler, H. P. R. Frederikse, J. H. Becker, W. Oshinky, “Electrical and optical properties of intermetallic compounds: I. indium antimonide,” Phys. Rev. 96, 571 (1954).

Frerichs, R.

R. Frerichs, “The photo-conductivity of incomplete phosphors,” Phys. Rev. 72, 594 (1947).

Frosch, C. J.

W. G. Spitzer, M. Gershenzon, C. J. Frosch, D. F. Gibbs, “Optical absorption in n-type gallium phosphide,” J. Phys. Chem. Solids 11, 339 (1959). See also Refs. 15, 36,54, 62, 70, 79, 81, and 82.

Fujita, S.

A. Mitsuishi, H. Yoshinaga, S. Fujita, “Far-infrared absorption of sulfides, selenides, and tellurides of zinc and cadmium,” J. Phys. Soc. Jap. 13, 1235 (1958).

Fuller, C. S.

H. J. Hrostowski, C. S. Fuller, “Extension of infrared spectra of III–V compounds by lithium diffusion,” J. Phys. Chem. Solids 4, 157 (1958).

Furlong, L. R.

L. R. Furlong, C. F. Ravilious, “Low-temperature luminescence and absorption of CdS,” Phys. Rev. 98, 954 (1955).

L. R. Furlong, “Low temperature luminescence of cadmium sulphide,” Phys. Rev. 95, 1086 (1954).

Garbeke, G.

M. Cardona, G. Garbeke, “Absorption of germanium and zinc-blende-type materials at energies higher than the fundamental absorption edge,” J. Appl. Phys. 34, 813 (1963).

Gebbie, H. A.

E. Burstein, C. S. Picus, H. A. Gebbie, F. Blatt, “Magnetic optical band gap effect in InSb,” Phys. Rev. 103, 826 (1956).

E. Bustein, G. S. Picus, H. A. Gebbie, “Cyclotron resonance at infrared frequencies in InSb at room temperature,” Phys. Rev. 103, 825 (1956).

Geick, R.

R. Geick, C. H. Perry, G. Rupprecht, “Normal modes in hexagonal boron nitride,” Phys. Rev. 146, 543 (1966).
[CrossRef]

Gershenzon, M.

W. G. Spitzer, M. Gershenzon, C. J. Frosch, D. F. Gibbs, “Optical absorption in n-type gallium phosphide,” J. Phys. Chem. Solids 11, 339 (1959). See also Refs. 15, 36,54, 62, 70, 79, 81, and 82.

Giardina, A. A.

A. A. Giardina, “Stress-optical study of strontium titanate,” J. Opt. Soc. Amer. 47, 727 (1957).

Gibbs, D. F.

W. G. Spitzer, M. Gershenzon, C. J. Frosch, D. F. Gibbs, “Optical absorption in n-type gallium phosphide,” J. Phys. Chem. Solids 11, 339 (1959). See also Refs. 15, 36,54, 62, 70, 79, 81, and 82.

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P. J. Gielisse et al., “Lattice infrared spectra of boron nitride and boron monophosphide,” Phys. Rev. 155, 1039 (1967).
[CrossRef]

Gobeli, G. W.

G. W. Gobeli, H. Y. Fan, “Infrared absorption and valence band in indium antimonide,” Phys. Rev. 119, 613 (1960).

H. Y. Fan, G. W. Gobeli, “Absorption edge in indium antimonide,” Bull. Amer. Phys. Soc. 1, 111 (1956).

Goodwin, A. R.

S. D. Smith, R. E. V. Chaddock, A. R. Goodwin, “Localized modes of substitutional impurities in intermetallic compounds,” Proceedings of the International Conference on the Physics of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

Gottesman, J.

J. Gottesman, W. F. C. Ferguson, “Optical properties of thin films of cadmium sulphide,” J. Opt. Soc. Amer. 44, 368 (1954).

Greenway, D. L.

D. L. Greenway, M. Cardona, “Reflectivity measurements on InSb–In2Te3and InAs–In2Te3alloys and on pure InSb, InAs, and In2Te3,” Proceedings of the International Conference on Semiconductor Physical Exeter 1962 (Physical Society, 1962).

F. Bassani, D. L. Greenway, G. Fischer, “Investigation of the band structure of the layer compounds GaAs and GaSe,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

Gross, E. F.

E. F. Gross, A. A. Kaplianskii, B. V. Novikov, “Exciton structure of the spectral curves of the photoconductive effect in crystals,” Sov. Phys.–Doklady 1, 582 (1956).

Grosse, P.

P. Grosse, M. Lutz, W. Richter, “Nachweis ultrarotaktiver Gitterschwingungen in Tellur,” Solid State Commun. 5, 99 (1967).

Hall, J. F.

J. F. Hall, W. F. C. Ferguson, “Optical properties of cadmium sulphide and zinc sulphide from 0.6–14 microns,” J. Opt. Soc. Amer. 45, 715 (1955).

Harbeke, G.

M. Cardona, G. Harbeke, “Optical properties of wurtzite-type crystals in the fundamental absorption region,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

Hartig, P. A.

P. A. Hartig, J. J. Loferski, “Infrared index of refraction of tellurium crystals,” J. Opt. Soc. Amer. 44, 17 (1954).

Hass, M.

M. Hass, B. W. Henvis, “Infrared lattice reflection spectra of III–V compound semiconductors,” J. Phys. Chem. Solids 23, 1099 (1962).

G. Picus, E. Burstein, B. W. Henvis, M. Hass, “Infrared lattice vibration studies of polar character in compound semiconductors,” J. Phys. Chem. Solids 8, 282 (1958).

Hawkins, D. F.

T. S. Moss, D. F. Hawkins, “Infrared absorption in gallium arsenide,” Infrared Phys. 1, 111 (1961).

Hayne, G. S.

D. F. Edwards, G. S. Hayne, “Optical properties of gallium antimonide,” J. Opt. Soc. Amer. 49, 415 (1959).

Henvis, B. W.

M. Hass, B. W. Henvis, “Infrared lattice reflection spectra of III–V compound semiconductors,” J. Phys. Chem. Solids 23, 1099 (1962).

G. Picus, E. Burstein, B. W. Henvis, M. Hass, “Infrared lattice vibration studies of polar character in compound semiconductors,” J. Phys. Chem. Solids 8, 282 (1958).

G. S. Picus, E. Burstein, B. W. Henvis, “Infrared lattice vibration studies of polar character in compound semiconductors,” Bull. Amer. Phys. Soc. 2, 66 (1957).

Hilsch, R.

R. Hilsch, R. W. Pohl, “Einige Dispersionfrequenzen der Alkalihalogenidkristalle im Schumanngebeit,” Z. Phys. 59, 812 (1930).

R. Hilsch, R. W. Pohl, “Die in Luft messbaren ultravioletten Dispersionsfrequenzen der Alkalihalogenide,” Z. Phys. 57, 145 (1929).

Hilton, A. R.

C. E. Jones, A. R. Hilton, “The depth of mechanical damage in gallium arsenide,” J. Electrochem. Soc. 112, 908 (1965).

Hopfield, J. J.

J. J. Hopfield, D. G. Thomas, “Theoretical and experimental effects of spatial dispersion on the optical properties of crystals,” Phys. Rev. 132, 563 (1963).

J. J. Hopfield, D. G. Thomas, “Photon momentum effects in the magneto-optics of excitons,” Phys. Rev. Lett. 4, 357 (1960).

D. G. Thomas, J. J. Hopfield, “Exciton spectrum of cadmium sulphide,” Phys. Rev. 116, 573 (1959).

J. J. Hopfield, D. G. Thomas, “Magneto-optic absorption spectrum of CdS,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

Hosler, W. R.

R. G. Breckenridge, B. F. Blunt, W. R. Hosler, H. P. R. Frederikse, J. H. Becker, W. Oshinky, “Electrical and optical properties of intermetallic compounds: I. indium antimonide,” Phys. Rev. 96, 571 (1954).

Howarth, L. E.

W. G. Spitzer, R. C. Miller, D. A. Kleinman, L. E. Howarth, “Far infrared dielectric dispersion in BaTiO3, SrTiO3, and TiO2,” Phys. Rev. 126, 1710 (1962).

Howe, J. B.

S. J. Czyzak, W. M. Baker, R. C. Crane, J. B. Howe, “Refractive indexes of single synthetic zinc sulphide and cadmium sulphide crystal,” J. Opt. Soc. Amer. 47, 240 (1957).

Hrostowski, H. J.

H. J. Hrostowski, C. S. Fuller, “Extension of infrared spectra of III–V compounds by lithium diffusion,” J. Phys. Chem. Solids 4, 157 (1958).

H. J. Hrostowski, G. H. Wheatley, W. F. Flood, “Anomalous optical behavior of InSb,” Phys. Rev. 95, 1683 (1954).

Ibuki, S.

A. Mitsuishi, A. Manabe, H. Yoshinaga, S. Ibuki, H. Komiya, “Infrared absorption of localized vibration due to lithium in zinc selenide and cadmium sulphide,” Proceedings of the International Conference of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

Iwasa, S.

R. Kaplan, E. D. Palik, R. F. Wallis, S. Iwasa, E. Burstein, Y. Sawada, “Infrared absorption by coupled collective cyclotron excitation-longitudinal-optic phonon modes in InSb,” Phys. Rev. Lett. 18, 159 (1967).

S. Iwasa, I. Balslev, E. Burstein, “The fundamental infrared lattice vibration spectra of GaAs,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

Jenny, D. A.

D. A. Jenny, R. H. Bube, “Superconducting CdTe,” Phys. Rev. 96, 1190 (1954).

Johnson, E. J.

E. J. Johnson, I. Filinski, H. Y. Fan, “Absorption and emission of excitons and impurities in GaSb,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

Johnson, F. A.

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, “Lattice absorption in gallium arsenide,” J. Appl. Phys. 32,2102S (1961).

S. J. Fray, F. A. Johnson, R. H. Jones, “Lattice absorption bands in indium antimonide,” Proc. Phys. Soc. 76, 939 (1960).

F. A. Johnson, W. Cochran, “The application of the shell model to infrared lattice absorption bands of semiconductors,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

F. A. Johnson, S. J. Jones, R. H. Jones, “Lattice absorption bands in indium antimonide,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

Jones, C. E.

C. E. Jones, A. R. Hilton, “The depth of mechanical damage in gallium arsenide,” J. Electrochem. Soc. 112, 908 (1965).

Jones, R. H.

S. J. Fray, F. A. Johnson, R. H. Jones, “Lattice absorption bands in indium antimonide,” Proc. Phys. Soc. 76, 939 (1960).

F. A. Johnson, S. J. Jones, R. H. Jones, “Lattice absorption bands in indium antimonide,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

Jones, S. J.

F. A. Johnson, S. J. Jones, R. H. Jones, “Lattice absorption bands in indium antimonide,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

Kaiser, W.

W. Kaiser, H. Y. Fan, “Infrared absorption of indium antimonide,” Phys. Rev. 98, 966 (1955).

Kane, E. O.

E. O. Kane, “Band structure of indium antimonide,” J. Phys. Chem. Solids 1, 249 (1957).

Kaplan, R.

R. Kaplan, E. D. Palik, R. F. Wallis, S. Iwasa, E. Burstein, Y. Sawada, “Infrared absorption by coupled collective cyclotron excitation-longitudinal-optic phonon modes in InSb,” Phys. Rev. Lett. 18, 159 (1967).

Kaplianskii, A. A.

E. F. Gross, A. A. Kaplianskii, B. V. Novikov, “Exciton structure of the spectral curves of the photoconductive effect in crystals,” Sov. Phys.–Doklady 1, 582 (1956).

Kauer, E.

K. J. Planker, E. Kauer, “Bestimmung der effektiven Masse freier Ladungsträger in Halbleitern aus der Ultrarotabsorption,” Z. Angew. Phys. 12, 425 (1960). See also Refs. 28 and 29.

Keller, H.

H. Keller, J. Stuke, “Elektrische und optische Eigenschaften von amorphem Tellur,” Phys. Status Solidi 8, 831 (1965).

Keyes, R. J.

R. J. Keyes, S. Zwerdling, S. Foner, H. H. Kolm, B. Lax, “Infrared cyclotron resonance in Bi, InSb, and InAs with high pulsed magnetic fields,” Phys. Rev. 104, 1804 (1956).

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N. K. Kisileva, N. N. Pribytkova, “Determination of the optical constants of Ge and CdTe by the reflection method,” Opt. Spectrosc. 10, 133 (1961).

Kleinman, D. A.

W. G. Spitzer, R. C. Miller, D. A. Kleinman, L. E. Howarth, “Far infrared dielectric dispersion in BaTiO3, SrTiO3, and TiO2,” Phys. Rev. 126, 1710 (1962).

Kleinman, D. S.

D. S. Kleinman, W. G. Spitzer, “Infrared lattice absorption of GaP,” Phys. Rev. 118, 110 (1960).

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C. C. Klick, “Luminescence and photoconductivity in cadmium sulphide at the absorption edge,” Phys. Rev. 89, 274 (1953).

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E. Kriger, O. Reinkober, E. Koch-Holm, “Reststrahlen von Mischkristallen,” Ann. Phys. 85, 110 (1928). See also Refs. 134, 136, 138, 139, and 141.

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R. J. Keyes, S. Zwerdling, S. Foner, H. H. Kolm, B. Lax, “Infrared cyclotron resonance in Bi, InSb, and InAs with high pulsed magnetic fields,” Phys. Rev. 104, 1804 (1956).

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A. Mitsuishi, A. Manabe, H. Yoshinaga, S. Ibuki, H. Komiya, “Infrared absorption of localized vibration due to lithium in zinc selenide and cadmium sulphide,” Proceedings of the International Conference of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

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S. I. Kovtunenko, V. V. Sobolev, “Reflection Spectra of Ge, InSB, GaSb, InAs, and GaP,” Opt. Spectrosc. 21, 186 (1966).

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R. F. Potter, G. G. Kretschmar, “Optical properties of evaporated InSb films,” J. Opt. Soc. Amer. 51, 693 (1961).

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E. Kriger, O. Reinkober, E. Koch-Holm, “Reststrahlen von Mischkristallen,” Ann. Phys. 85, 110 (1928). See also Refs. 134, 136, 138, 139, and 141.

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A. Kublisky, “Einige optische Konstanten von Alkalihalogenidkristallen,” Ann. Phys. 20, 793 (1934).

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I. Kudman, L. Vieland, “Absorption edge in degenerate n-type gallium arsenide,” J. Phys. Chem. Solid 24, 967 (1963).

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S. W. Kurnich, J. M. Powell, “Optical absorption in pure single crystal InSb at 298° and 78°K,” Phys. Rev. 116, 597 (1959).

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L. M. Lambert, “Optical absorption in an electric field in semi-insulating gallium arsenide,” J. Phys. Chem. Solids 26, 1409 (1965).

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R. J. Keyes, S. Zwerdling, S. Foner, H. H. Kolm, B. Lax, “Infrared cyclotron resonance in Bi, InSb, and InAs with high pulsed magnetic fields,” Phys. Rev. 104, 1804 (1956).

B. Lax, “Magneto-spectroscopy in semiconductors” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

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M. Balkanski, J. M. Besson, R. LeToullec, “Dispersion curves of phonons in hexagonal cadmium sulphide obtained by infrared spectroscopy,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

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S. B. Levin, N. J. Field, F. W. Plock, L. Merker, “Some optical properties of strontium titanate crystals,” J. Opt. Soc. Amer. 45, 737 (1955).

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P. A. Hartig, J. J. Loferski, “Infrared index of refraction of tellurium crystals,” J. Opt. Soc. Amer. 44, 17 (1954).

J. J. Loferski, “Infrared crystal properties of single crystals of tellurium,” Phys. Rev. 93, 707 (1954).

J. J. Loferski, “Optical properties in single crystals of tellurium,” Phys. Rev. 87, 905 (1952).

J. J. Loferski, P. H. Miller, “Infrared properties of tellurium,” Phys. Rev. 83, 876 (1951).

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E. Loh, “Spectral photoresponse of Si, GaAs, and Ge shallow junction in the region of 1–5 eV,” J. Phys. Chem. Solids 24, 493 (1963).

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R. Lorenz, “Mineralsynthetische Versuche, über die Einwirkung trockenen Schwefelwasserstoffs auf einige Metalle,” Chem. Ber. 24, 1509 (1891).

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F. Lukes, E. Schmidt, “The fine structure and the temperature dependence of the reflectivity and optical constants of Ge, Si, and III–V compounds,” Proceedings of the Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

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P. Grosse, M. Lutz, W. Richter, “Nachweis ultrarotaktiver Gitterschwingungen in Tellur,” Solid State Commun. 5, 99 (1967).

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R. Braunstein, L. Magid, “Optical absorption in p-type gallium arsenide,” Phys. Rev. 111, 480 (1958).

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A. Manabe, A. Mitsuishi, H. Yoshinaga, “Infrared lattice reflection spectra of II–VI Compounds,” Jap. J. Appl. Phys. 6, 593 (1967).

A. Mitsuishi, A. Manabe, H. Yoshinaga, S. Ibuki, H. Komiya, “Infrared absorption of localized vibration due to lithium in zinc selenide and cadmium sulphide,” Proceedings of the International Conference of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

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D. T. F. Marple, “Effective electron mass in CdTe,” Phys. Rev. 129, 2466 (1963).

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W. Martienssen, “Der Einfluss der Temperatur auf die Kante der optischen Eigenabsorption von Alkalihalogeniden,” Nachr. Akad. Wiss. Göttingen, Math.-Phys. K1 11, 257 (1955).

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W. Martinssen, “Über Die Excitonenbanden der Alkalihalogenidkristalle,” J. Phys. Chem. Solids 2, 257 (1957).

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S. J. Czyzak, D. J. Craig, C. E. McCain, D. C. Reynolds, “Single synthetic cadmium sulphide crystals,” J. Appl. Phys. 23, 932 (1952).

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S. S. Ballard, K. A. McCarthy, W. L. Wolfe, “Optical materials for infrared instrumentation,” IRIA Rep. No. 2389–11–S, University of Michigan, April1961.

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S. B. Levin, N. J. Field, F. W. Plock, L. Merker, “Some optical properties of strontium titanate crystals,” J. Opt. Soc. Amer. 45, 737 (1955).

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E. T. Allen, J. L. Crenshaw, H. E. Merwin, “The sulphides of zinc, cadmium, and mercury; their crystalline forms and genetic conditions,” Amer. J. Sci. 34, 341 (1912).

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J. J. Loferski, P. H. Miller, “Infrared properties of tellurium,” Phys. Rev. 83, 876 (1951).

Miller, R. C.

W. G. Spitzer, R. C. Miller, D. A. Kleinman, L. E. Howarth, “Far infrared dielectric dispersion in BaTiO3, SrTiO3, and TiO2,” Phys. Rev. 126, 1710 (1962).

Miller, R. F.

R. F. Miller, “The optical constants of crystals of selenium and tellurium for wavelengths from 3000 to 5000 angstroms,” J. Opt. Soc. Amer. 10, 621 (1925).

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A. Manabe, A. Mitsuishi, H. Yoshinaga, “Infrared lattice reflection spectra of II–VI Compounds,” Jap. J. Appl. Phys. 6, 593 (1967).

A. Mitsuishi, “Optical properties of CdTe in the far infrared region,” J. Phys. Soc. Jap. 16, 533 (1961).

A. Mitsuishi, H. Yoshinaga, S. Fujita, “Far-infrared absorption of sulfides, selenides, and tellurides of zinc and cadmium,” J. Phys. Soc. Jap. 13, 1235 (1958).

A. Mitsuishi, A. Manabe, H. Yoshinaga, S. Ibuki, H. Komiya, “Infrared absorption of localized vibration due to lithium in zinc selenide and cadmium sulphide,” Proceedings of the International Conference of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

Moss, T. S.

T. S. Moss, “Optical absorption edge in GaAs and its dependence on electric field,” J. Appl. Phys. 32, 2136 (1961).

T. S. Moss, D. F. Hawkins, “Infrared absorption in gallium arsenide,” Infrared Phys. 1, 111 (1961).

S. D. Smith, T. S. Moss, K. W. Taylor, “The energy-dependence of electron mass in indium antimonide determined from measurements of the infrared Faraday effect,” J. Phys. Chem. Solids 11, 131 (1959).

T. S. Moss, “Optical properties of tellurium in the infrared,” Proc. Phys. Soc. 65B, 62 (1952).

T. S. Moss, “Photoconductivity in the elements,” Proc. Phys. 64A, 590 (1951).

T. S. Moss, “Changes in the activation energy of tellurium,” Phys. Rev. 79, 1011 (1950).

T. S. Moss, “Infrared photoconductivity in layers of tellurium and arsenic,” Proc. Phys. Soc. 62A, 264 (1949).

T. S. Moss, A. K. Walton, “Infrared Faraday effect in semiconductors” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

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L. J. Neuringer, “Effect of pressure on the infrared absorption of semiconductors,” Phys. Rev. 113, 1495 (1959).

L. J. Neuringer, “Effect of pressure on the absorption edge of tellurium,” Phys. Rev. 98, 1193 (1955).

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R. Newman, “Optical properties of n-type InP,” Phys. Rev. 111, 1518 (1958).

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J. A. Noland, “Optical absorption of single-crystal strontium titanate,” Phys. Rev. 94, 724 (1954).

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J. S. Blakemore, K. C. Nomura, “Intrinsic optical absorption in tellurium,” Phys. Rev. 127, 1024 (1962).

K. C. Nomura, “Optical activity in tellurium,” Phys. Rev. Lett. 5, 500 (1960).

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E. F. Gross, A. A. Kaplianskii, B. V. Novikov, “Exciton structure of the spectral curves of the photoconductive effect in crystals,” Sov. Phys.–Doklady 1, 582 (1956).

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E. G. Schneider, H. M. O’Bryan, “The absorption of ionic crystals in the ultraviolet,” Phys. Rev. 51, 293 (1937).

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H. Yoshinaga, R. A. Oetjen, “Optical properties of indium antimonide in the region from 20 to 200 microns,” Phys. Rev. 101, 526 (1956). See also Refs. 39, 46, 49, 51, 54–56, 60–64, 70, 79, 81, and 82.

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R. G. Breckenridge, B. F. Blunt, W. R. Hosler, H. P. R. Frederikse, J. H. Becker, W. Oshinky, “Electrical and optical properties of intermetallic compounds: I. indium antimonide,” Phys. Rev. 96, 571 (1954).

Oswald, F.

F. Oswald, “Optische Bestimmung der Temperaturabhängigkeit des Bandabstandes von Halblutern des Types AIIIBV,” Z. Naturforsch. 10a, 927 (1955).

O. Folberth, F. Oswald, “Über die Halbleilereigenschaften von Galliumphosphid,” Z. Naturforsch. 99, 1050 (1954).

F. Oswald, R. Schade, “Über die Bestimmung der optischen Konstanten von Halbleitern des Typus AIIIBVim Infraroten,” Z. Naturforsch. 9a, 611 (1954).

Palik, E. D.

R. Kaplan, E. D. Palik, R. F. Wallis, S. Iwasa, E. Burstein, Y. Sawada, “Infrared absorption by coupled collective cyclotron excitation-longitudinal-optic phonon modes in InSb,” Phys. Rev. Lett. 18, 159 (1967).

Perlmutter, A.

C. Barcus, A. Perlmutter, J. Callaway, “Effective mass of electrons in gallium arsenide,” Phys. Rev. 111, 167 (1958).

A. Perlmutter, “Infrared optical constants of gallium arsenide,” Bull. Amer. Phys. Soc. 2, 66 (1957).

Perry, C. H.

R. Geick, C. H. Perry, G. Rupprecht, “Normal modes in hexagonal boron nitride,” Phys. Rev. 146, 543 (1966).
[CrossRef]

Philipp, H. R.

E. A. Taft, H. R. Philipp, “Photoelectric emission from the valence band of some alkali halides,” J. Phys. Chem. Solids 3, 1 (1959).

Phillip, H. R.

H. Ehrenreich, H. R. Phillip, “Optical properties of semiconductors in the ultraviolet,” Proceedings of the International Conference in Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

Phillips, H. R.

H. R. Phillips, “Optical properties of semiconductors,” Phys. Rev. 129, 1550 (1963).

H. R. Phillips, “Interband transitions in groups 4, 3–5, and 2–6 semiconductors,” Phys. Rev. Lett. 8, 59 (1962).

Phillips, J.

E. Blount, J. Callaway, M. Cohen, W. Dumke, J. Phillips, “Infrared absorption of indium antimonide,” Phys. Rev. 101, 563 (1956).

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E. Burstein, C. S. Picus, H. A. Gebbie, F. Blatt, “Magnetic optical band gap effect in InSb,” Phys. Rev. 103, 826 (1956).

Picus, G.

G. Picus, E. Burstein, B. W. Henvis, M. Hass, “Infrared lattice vibration studies of polar character in compound semiconductors,” J. Phys. Chem. Solids 8, 282 (1958).

Picus, G. S.

G. S. Picus, E. Burstein, B. W. Henvis, “Infrared lattice vibration studies of polar character in compound semiconductors,” Bull. Amer. Phys. Soc. 2, 66 (1957).

E. Bustein, G. S. Picus, H. A. Gebbie, “Cyclotron resonance at infrared frequencies in InSb at room temperature,” Phys. Rev. 103, 825 (1956).

Pidgeon, C. R.

S. D. Smith, C. R. Pidgeon, “Ellipticity associated with free carrier Faraday rotation in semiconductors,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

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K. J. Planker, E. Kauer, “Bestimmung der effektiven Masse freier Ladungsträger in Halbleitern aus der Ultrarotabsorption,” Z. Angew. Phys. 12, 425 (1960). See also Refs. 28 and 29.

Plock, F. W.

S. B. Levin, N. J. Field, F. W. Plock, L. Merker, “Some optical properties of strontium titanate crystals,” J. Opt. Soc. Amer. 45, 737 (1955).

Plyler, E. K.

E. K. Plyler, J. J. Ball, “Filters for the infrared region,” J. Opt. Soc. Amer. 42, 266 (1952).

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R. Hilsch, R. W. Pohl, “Einige Dispersionfrequenzen der Alkalihalogenidkristalle im Schumanngebeit,” Z. Phys. 59, 812 (1930).

R. Hilsch, R. W. Pohl, “Die in Luft messbaren ultravioletten Dispersionsfrequenzen der Alkalihalogenide,” Z. Phys. 57, 145 (1929).

Potter, R. F.

R. F. Potter, H. H. Wieder, “Some galvanomagnetic and optical properties of Cu doped InSb films,” J. Solid State Electron. 7, 253 (1964).

R. F. Potter, G. G. Kretschmar, “Optical properties of evaporated InSb films,” J. Opt. Soc. Amer. 51, 693 (1961).

D. L. Stierwalt, R. F. Potter, “Infrared spectral emittance of Si, Ge, and CdS,” Proceedings of the International Conference on Physics of Semiconductors, Exeter 1962 (Physical Society, 1962).

R. F. Potter, D. L. Stierwalt, “Reststrahlen frequencies for mixed GaAsySb1−ysystem,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

D. L. Stierwalt, R. F. Potter, “Infrared spectral emittance of indium phosphide,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964). See also refs. 36, 46, 49, 51, 57, 58, 63, and 79.

Powell, J. M.

S. W. Kurnich, J. M. Powell, “Optical absorption in pure single crystal InSb at 298° and 78°K,” Phys. Rev. 116, 597 (1959).

Pribytkova, N. N.

N. K. Kisileva, N. N. Pribytkova, “Determination of the optical constants of Ge and CdTe by the reflection method,” Opt. Spectrosc. 10, 133 (1961).

Quarrington, G. E.

V. Roberts, G. E. Quarrington, “Accurate measurements of absorption in indium antimonide and gallium antimonide,” J. Elec. 1, 152 (1955).

Quarrington, J. E.

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, “Lattice absorption in gallium arsenide,” J. Appl. Phys. 32,2102S (1961).

Ramdas, A. K.

A. K. Ramdas, H. Y. Fan, “Infrared absorption in gallium antimonide,” Bull. Amer. Phys. Soc. 3, 121 (1958).

Ravilious, C. F.

L. R. Furlong, C. F. Ravilious, “Low-temperature luminescence and absorption of CdS,” Phys. Rev. 98, 954 (1955).

Reinkober, O.

E. Kriger, O. Reinkober, E. Koch-Holm, “Reststrahlen von Mischkristallen,” Ann. Phys. 85, 110 (1928). See also Refs. 134, 136, 138, 139, and 141.

Reynolds, C. C.

D. C. Reynolds, S. J. Czyzak, R. C. Allen, C. C. Reynolds, “Properties of single cadmium sulphide crystals,” J. Opt. Soc. Amer. 45, 136 (1955).

Reynolds, D. C.

D. C. Reynolds, S. J. Czyzak, R. C. Allen, C. C. Reynolds, “Properties of single cadmium sulphide crystals,” J. Opt. Soc. Amer. 45, 136 (1955).

S. J. Czyzak, D. J. Craig, C. E. McCain, D. C. Reynolds, “Single synthetic cadmium sulphide crystals,” J. Appl. Phys. 23, 932 (1952).

Richards, J. C.

F. A. Cunnell, T. J. Edmond, J. C. Richards, “Measurements on some semiconducting compounds with the zinc-blende structure,” Proc. Phys. Soc. 67B, 849 (1954).

Richter, W.

P. Grosse, M. Lutz, W. Richter, “Nachweis ultrarotaktiver Gitterschwingungen in Tellur,” Solid State Commun. 5, 99 (1967).

Roberts, V.

V. Roberts, G. E. Quarrington, “Accurate measurements of absorption in indium antimonide and gallium antimonide,” J. Elec. 1, 152 (1955).

Rupprecht, G.

R. Geick, C. H. Perry, G. Rupprecht, “Normal modes in hexagonal boron nitride,” Phys. Rev. 146, 543 (1966).
[CrossRef]

Rustgi, O. P.

O. P. Rustgi, W. C. Walker, G. L. Weissler, “Optical properties of Sb, Te, and Ti films in the vacuum ultraviolet,” J. Opt. Soc. Amer. 51, 1357 (1961).

Rütter, E.

E. Rütter, “Die ultrarote Durchlässigkeit von dünnen kathodischen Schichten und organischen Substanzen unterhalp 3 μ,” Z. Phys. 60, 1 (1930).

Saker, E. W.

F. A. Cunnel, E. W. Saker, J. T. Edmond, “A note on the semiconducting compound InSb,” Proc. Phys. Soc. 66B, 1115 (1953).

Salzberg, C. D.

C. D. Salzberg, “Infrared transmittance of strontium titanate from room temperature to −180°C,” J. Opt. Soc. Amer. 51, 1149 (1961).

Sanderson, R. B.

R. B. Sanderson, “Far infrared optical properties of indium antimonide,” J. Phys. Chem. Solids 26, 803 (1965).

Sawada, Y.

R. Kaplan, E. D. Palik, R. F. Wallis, S. Iwasa, E. Burstein, Y. Sawada, “Infrared absorption by coupled collective cyclotron excitation-longitudinal-optic phonon modes in InSb,” Phys. Rev. Lett. 18, 159 (1967).

Schade, R.

F. Oswald, R. Schade, “Über die Bestimmung der optischen Konstanten von Halbleitern des Typus AIIIBVim Infraroten,” Z. Naturforsch. 9a, 611 (1954).

Schmidt, E.

F. Lukes, E. Schmidt, “The fine structure and the temperature dependence of the reflectivity and optical constants of Ge, Si, and III–V compounds,” Proceedings of the Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

Schneider, E. G.

E. G. Schneider, H. M. O’Bryan, “The absorption of ionic crystals in the ultraviolet,” Phys. Rev. 51, 293 (1937).

Shenker, H.

H. Shenker, “Low-field breakdown, non-ohmic conductivity, and photoconductivity of CdS at low temperature,” J. Phys. Chem. Solids 19, 1 (1961).

Shilliday, T. S.

P. W. Davis, T. S. Shilliday, “Some optical properties of cadmium telluride,” Phys. Rev. 118, 1020 (1960).

Slykhouse, T. E.

A. K. Edwards, T. E. Slykhouse, H. G. Drickamer, “The effect of pressure on zinc blende and wurtzite structures,” J. Phys. Chem. Solids 11, 140 (1959).

Smith, S. D.

S. D. Smith, T. S. Moss, K. W. Taylor, “The energy-dependence of electron mass in indium antimonide determined from measurements of the infrared Faraday effect,” J. Phys. Chem. Solids 11, 131 (1959).

S. D. Smith, C. R. Pidgeon, “Ellipticity associated with free carrier Faraday rotation in semiconductors,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

S. D. Smith, R. E. V. Chaddock, A. R. Goodwin, “Localized modes of substitutional impurities in intermetallic compounds,” Proceedings of the International Conference on the Physics of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

Sobolev, V. V.

S. I. Kovtunenko, V. V. Sobolev, “Reflection Spectra of Ge, InSB, GaSb, InAs, and GaP,” Opt. Spectrosc. 21, 186 (1966).

Spitzer, W. G.

W. G. Spitzer, R. C. Miller, D. A. Kleinman, L. E. Howarth, “Far infrared dielectric dispersion in BaTiO3, SrTiO3, and TiO2,” Phys. Rev. 126, 1710 (1962).

D. S. Kleinman, W. G. Spitzer, “Infrared lattice absorption of GaP,” Phys. Rev. 118, 110 (1960).

W. G. Spitzer, M. Gershenzon, C. J. Frosch, D. F. Gibbs, “Optical absorption in n-type gallium phosphide,” J. Phys. Chem. Solids 11, 339 (1959). See also Refs. 15, 36,54, 62, 70, 79, 81, and 82.

W. G. Spitzer, H. Y. Fan, “Determination of optical constants and carrier effective mass of semiconductors,” Phys. Rev. 106, 882 (1957).

W. G. Spitzer, H. Y. Fan, “Infrared absorption in indium antimonide,” Phys. Rev. 99, 1893 (1955).

Stern, F.

F. Stern, J. R. Dixon, “Narrowing the energy gap in semiconductors by compensation,” J. Appl. Phys. 30, 268 (1959).

F. Stern, R. M. Talley, “Optical absorption in p-type indium arsenide,” Phys. Rev. 108, 158 (1957).

F. Stern, R. M. Talley, “Impurity band in semiconductors with small effective mass,” Phys. Rev. 100, 1638 (1955).

F. Stern, “Calculation of optical absorption in III–V semiconductors” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

Stierwalt, D. L.

D. L. Stierwalt, R. F. Potter, “Infrared spectral emittance of indium phosphide,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964). See also refs. 36, 46, 49, 51, 57, 58, 63, and 79.

D. L. Stierwalt, “Far infrared lattice bands in indium antimonide,” Proceedings of the International Conference on the Physics of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

D. L. Stierwalt, R. F. Potter, “Infrared spectral emittance of Si, Ge, and CdS,” Proceedings of the International Conference on Physics of Semiconductors, Exeter 1962 (Physical Society, 1962).

R. F. Potter, D. L. Stierwalt, “Reststrahlen frequencies for mixed GaAsySb1−ysystem,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

Stuke, J.

H. Keller, J. Stuke, “Elektrische und optische Eigenschaften von amorphem Tellur,” Phys. Status Solidi 8, 831 (1965).

Sturge, M. D.

M. D. Sturge, “Optical absorption of gallium arsenide between 0.6 and 2.75 eV,” Phys. Rev. 127, 768 (1962).

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W. K. Subashiev, S. A. Abagyan, “Band structure of GaAsxP1−xcrystals,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964). See also Refs. 15, 39, 46, 49, 51, 55–58, and 61–64.

Taft, E. A.

E. A. Taft, H. R. Philipp, “Photoelectric emission from the valence band of some alkali halides,” J. Phys. Chem. Solids 3, 1 (1959).

Talley, R. M.

F. Stern, R. M. Talley, “Optical absorption in p-type indium arsenide,” Phys. Rev. 108, 158 (1957).

F. Stern, R. M. Talley, “Impurity band in semiconductors with small effective mass,” Phys. Rev. 100, 1638 (1955).

R. M. Talley, D. P. Enright, “Photovoltaic effect in InAs,” Phys. Rev. 95, 1092 (1954). See also Refs. 39, 49, 51, 54–58, 61–64, 70, 79, 81, 82, 103, 104, 109, 120, and 122.

Tanenbaum, M.

M. Tanenbaum, H. B. Briggs, “Optical properties of indium antimonide,” Phys. Rev. 91, 1561 (1963).

Tauc, J.

J. Tauc, A. Abraham, “Reflection spectra of semiconductors with diamond and sphalerite structures,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

J. Tauc, “Optical properties of semiconductors,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

Taylor, K. W.

S. D. Smith, T. S. Moss, K. W. Taylor, “The energy-dependence of electron mass in indium antimonide determined from measurements of the infrared Faraday effect,” J. Phys. Chem. Solids 11, 131 (1959).

Teegarden, K.

K. Teegarden, “Fine structure in the exciton bands of the alkali halides,” Phys. Rev. 108, 660 (1957). See also Refs. 13, 134, 137–139, and 141.

Teegarden, K. J.

J. E. Eby, K. J. Teegarden, D. B. Dutton, “Ultraviolet absorption of alkali halides,” Phys. Rev. 116, 1099 (1959).

Thomas, D. G.

J. J. Hopfield, D. G. Thomas, “Theoretical and experimental effects of spatial dispersion on the optical properties of crystals,” Phys. Rev. 132, 563 (1963).

J. J. Hopfield, D. G. Thomas, “Photon momentum effects in the magneto-optics of excitons,” Phys. Rev. Lett. 4, 357 (1960).

D. G. Thomas, J. J. Hopfield, “Exciton spectrum of cadmium sulphide,” Phys. Rev. 116, 573 (1959).

J. J. Hopfield, D. G. Thomas, “Magneto-optic absorption spectrum of CdS,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

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C. Z. van Doorn, D. de Nobel, “Luminescence, transmission, and width of the energy gap of CdTe single crystals,” Physica 22, 338 (1956).

Van Dyke, G. D.

G. D. Van Dyke, “The optical constants of isolated tellurium crystals,” J. Opt. Soc. Amer. 6, 917 (1922). See also Ref. 100.

Vieland, L.

I. Kudman, L. Vieland, “Absorption edge in degenerate n-type gallium arsenide,” J. Phys. Chem. Solid 24, 967 (1963).

Walker, W. C.

O. P. Rustgi, W. C. Walker, G. L. Weissler, “Optical properties of Sb, Te, and Ti films in the vacuum ultraviolet,” J. Opt. Soc. Amer. 51, 1357 (1961).

Wallis, R. F.

R. Kaplan, E. D. Palik, R. F. Wallis, S. Iwasa, E. Burstein, Y. Sawada, “Infrared absorption by coupled collective cyclotron excitation-longitudinal-optic phonon modes in InSb,” Phys. Rev. Lett. 18, 159 (1967).

Walton, A. K.

T. S. Moss, A. K. Walton, “Infrared Faraday effect in semiconductors” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

Weissler, G. L.

O. P. Rustgi, W. C. Walker, G. L. Weissler, “Optical properties of Sb, Te, and Ti films in the vacuum ultraviolet,” J. Opt. Soc. Amer. 51, 1357 (1961).

Welker, H.

H. Welker, “Semiconducting intermetallic compounds,” Physica 20, 893 (1954).

Wheatley, G. H.

H. J. Hrostowski, G. H. Wheatley, W. F. Flood, “Anomalous optical behavior of InSb,” Phys. Rev. 95, 1683 (1954).

Wieder, H. H.

R. F. Potter, H. H. Wieder, “Some galvanomagnetic and optical properties of Cu doped InSb films,” J. Solid State Electron. 7, 253 (1964).

Williams, N.

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, “Lattice absorption in gallium arsenide,” J. Appl. Phys. 32,2102S (1961).

Williams, R.

R. Williams, “Electric field light absorption in CdS,” Phys. Rev. 117, 1487 (1960).

Wolfe, W. L.

S. S. Ballard, K. A. McCarthy, W. L. Wolfe, “Optical materials for infrared instrumentation,” IRIA Rep. No. 2389–11–S, University of Michigan, April1961.

Woolley, J. C.

J. C. Woolley, K. W. Blazey, “Reflectivity spectra of GaSb–InSb and GaAs–InAs alloys,” J. Phys. Chem. Solids 25, 713 (1964). See also Refs. 15, 36, and 39.

Yoshinaga, H.

A. Manabe, A. Mitsuishi, H. Yoshinaga, “Infrared lattice reflection spectra of II–VI Compounds,” Jap. J. Appl. Phys. 6, 593 (1967).

A. Mitsuishi, H. Yoshinaga, S. Fujita, “Far-infrared absorption of sulfides, selenides, and tellurides of zinc and cadmium,” J. Phys. Soc. Jap. 13, 1235 (1958).

H. Yoshinaga, R. A. Oetjen, “Optical properties of indium antimonide in the region from 20 to 200 microns,” Phys. Rev. 101, 526 (1956). See also Refs. 39, 46, 49, 51, 54–56, 60–64, 70, 79, 81, and 82.

H. Yoshinaga, “Reflectivity of several crystals in the far infrared region between 20 and 200 microns,” Phys. Rev. 100, 753 (1955).

A. Mitsuishi, A. Manabe, H. Yoshinaga, S. Ibuki, H. Komiya, “Infrared absorption of localized vibration due to lithium in zinc selenide and cadmium sulphide,” Proceedings of the International Conference of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

Zwerdling, S.

R. J. Keyes, S. Zwerdling, S. Foner, H. H. Kolm, B. Lax, “Infrared cyclotron resonance in Bi, InSb, and InAs with high pulsed magnetic fields,” Phys. Rev. 104, 1804 (1956).

Amer. J. Sci.

E. T. Allen, J. L. Crenshaw, H. E. Merwin, “The sulphides of zinc, cadmium, and mercury; their crystalline forms and genetic conditions,” Amer. J. Sci. 34, 341 (1912).

Ann. Phys.

A. Kublisky, “Einige optische Konstanten von Alkalihalogenidkristallen,” Ann. Phys. 20, 793 (1934).

E. Kriger, O. Reinkober, E. Koch-Holm, “Reststrahlen von Mischkristallen,” Ann. Phys. 85, 110 (1928). See also Refs. 134, 136, 138, 139, and 141.

Bull. Amer. Phys. Soc.

A. Perlmutter, “Infrared optical constants of gallium arsenide,” Bull. Amer. Phys. Soc. 2, 66 (1957).

H. Y. Fan, G. W. Gobeli, “Absorption edge in indium antimonide,” Bull. Amer. Phys. Soc. 1, 111 (1956).

G. S. Picus, E. Burstein, B. W. Henvis, “Infrared lattice vibration studies of polar character in compound semiconductors,” Bull. Amer. Phys. Soc. 2, 66 (1957).

A. K. Ramdas, H. Y. Fan, “Infrared absorption in gallium antimonide,” Bull. Amer. Phys. Soc. 3, 121 (1958).

Chem. Ber.

R. Lorenz, “Mineralsynthetische Versuche, über die Einwirkung trockenen Schwefelwasserstoffs auf einige Metalle,” Chem. Ber. 24, 1509 (1891).

Infrared Phys.

T. S. Moss, D. F. Hawkins, “Infrared absorption in gallium arsenide,” Infrared Phys. 1, 111 (1961).

J. Appl. Phys.

T. S. Moss, “Optical absorption edge in GaAs and its dependence on electric field,” J. Appl. Phys. 32, 2136 (1961).

F. Stern, J. R. Dixon, “Narrowing the energy gap in semiconductors by compensation,” J. Appl. Phys. 30, 268 (1959).

M. Cardona, “Optical studies of the band structure of InP,” J. Appl. Phys. 32, 958 (1961).

M. Cardona, “Fundamental reflectivity spectrum of semiconductors with zinc-blende structures,” J. Appl. Phys. 32, 215 (1961).

R. J. Collins, “Mechanism and defect responsible for edge emission in CdS,” J. Appl. Phys. 30, 1135 (1959).

S. J. Czyzak, D. J. Craig, C. E. McCain, D. C. Reynolds, “Single synthetic cadmium sulphide crystals,” J. Appl. Phys. 23, 932 (1952).

W. Cochran, S. J. Fray, F. A. Johnson, J. E. Quarrington, N. Williams, “Lattice absorption in gallium arsenide,” J. Appl. Phys. 32,2102S (1961).

M. Cardona, G. Garbeke, “Absorption of germanium and zinc-blende-type materials at energies higher than the fundamental absorption edge,” J. Appl. Phys. 34, 813 (1963).

J. Elec.

V. Roberts, G. E. Quarrington, “Accurate measurements of absorption in indium antimonide and gallium antimonide,” J. Elec. 1, 152 (1955).

J. Elect.

R. Barrie, J. T. Edmond, “A study of the conduction band of InSb,” J. Elect. 1, 161 (1955).

J. Electrochem. Soc.

C. E. Jones, A. R. Hilton, “The depth of mechanical damage in gallium arsenide,” J. Electrochem. Soc. 112, 908 (1965).

J. Opt. Soc. Amer.

R. F. Potter, G. G. Kretschmar, “Optical properties of evaporated InSb films,” J. Opt. Soc. Amer. 51, 693 (1961).

D. F. Edwards, G. S. Hayne, “Optical properties of gallium antimonide,” J. Opt. Soc. Amer. 49, 415 (1959).

S. J. Czyzak, W. M. Baker, R. C. Crane, J. B. Howe, “Refractive indexes of single synthetic zinc sulphide and cadmium sulphide crystal,” J. Opt. Soc. Amer. 47, 240 (1957).

S. J. Czyzak, R. C. Crane, T. M. Bieniewski, “Dichroism in essentially pure and activated cadmium sulphide single crystals,” J. Opt. Soc. Amer. 49, 485 (1959).

A. B. Francis, A. L. Carlson, “Cadmium sulphide infrared optical material,” J. Opt. Soc. Amer. 50, 118 (1960).

T. M. Bieniewski, S. J. Czyzak, “Refractive indexes of single hexagonal ZnS and CdS crystals,” J. Opt. Soc. Amer. 53, 496 (1963).

D. C. Reynolds, S. J. Czyzak, R. C. Allen, C. C. Reynolds, “Properties of single cadmium sulphide crystals,” J. Opt. Soc. Amer. 45, 136 (1955).

J. Gottesman, W. F. C. Ferguson, “Optical properties of thin films of cadmium sulphide,” J. Opt. Soc. Amer. 44, 368 (1954).

J. F. Hall, W. F. C. Ferguson, “Optical properties of cadmium sulphide and zinc sulphide from 0.6–14 microns,” J. Opt. Soc. Amer. 45, 715 (1955).

A. A. Giardina, “Stress-optical study of strontium titanate,” J. Opt. Soc. Amer. 47, 727 (1957).

S. B. Levin, N. J. Field, F. W. Plock, L. Merker, “Some optical properties of strontium titanate crystals,” J. Opt. Soc. Amer. 45, 737 (1955).

C. D. Salzberg, “Infrared transmittance of strontium titanate from room temperature to −180°C,” J. Opt. Soc. Amer. 51, 1149 (1961).

P. A. Hartig, J. J. Loferski, “Infrared index of refraction of tellurium crystals,” J. Opt. Soc. Amer. 44, 17 (1954).

R. F. Miller, “The optical constants of crystals of selenium and tellurium for wavelengths from 3000 to 5000 angstroms,” J. Opt. Soc. Amer. 10, 621 (1925).

E. K. Plyler, J. J. Ball, “Filters for the infrared region,” J. Opt. Soc. Amer. 42, 266 (1952).

O. P. Rustgi, W. C. Walker, G. L. Weissler, “Optical properties of Sb, Te, and Ti films in the vacuum ultraviolet,” J. Opt. Soc. Amer. 51, 1357 (1961).

G. D. Van Dyke, “The optical constants of isolated tellurium crystals,” J. Opt. Soc. Amer. 6, 917 (1922). See also Ref. 100.

J. Phys. Chem. Solid

I. Kudman, L. Vieland, “Absorption edge in degenerate n-type gallium arsenide,” J. Phys. Chem. Solid 24, 967 (1963).

J. Phys. Chem. Solids

L. M. Lambert, “Optical absorption in an electric field in semi-insulating gallium arsenide,” J. Phys. Chem. Solids 26, 1409 (1965).

E. Loh, “Spectral photoresponse of Si, GaAs, and Ge shallow junction in the region of 1–5 eV,” J. Phys. Chem. Solids 24, 493 (1963).

R. Braunstein, “Intervalance band transitions in gallium arsenide,” J. Phys. Chem. Solids 8, 280 (1959).

W. G. Spitzer, M. Gershenzon, C. J. Frosch, D. F. Gibbs, “Optical absorption in n-type gallium phosphide,” J. Phys. Chem. Solids 11, 339 (1959). See also Refs. 15, 36,54, 62, 70, 79, 81, and 82.

E. O. Kane, “Band structure of indium antimonide,” J. Phys. Chem. Solids 1, 249 (1957).

R. B. Sanderson, “Far infrared optical properties of indium antimonide,” J. Phys. Chem. Solids 26, 803 (1965).

S. D. Smith, T. S. Moss, K. W. Taylor, “The energy-dependence of electron mass in indium antimonide determined from measurements of the infrared Faraday effect,” J. Phys. Chem. Solids 11, 131 (1959).

W. Martinssen, “Über Die Excitonenbanden der Alkalihalogenidkristalle,” J. Phys. Chem. Solids 2, 257 (1957).

E. A. Taft, H. R. Philipp, “Photoelectric emission from the valence band of some alkali halides,” J. Phys. Chem. Solids 3, 1 (1959).

H. Shenker, “Low-field breakdown, non-ohmic conductivity, and photoconductivity of CdS at low temperature,” J. Phys. Chem. Solids 19, 1 (1961).

D. L. Dexter, “Optical investigations of semiconductors at the University of Rochester,” J. Phys. Chem. Solids 8, 473 (1959).

D. Dutton, “Anisotropy of edge luminescence in cadmium sulphide,” J. Phys. Chem. Solids 6, 101 (1958).

A. K. Edwards, T. E. Slykhouse, H. G. Drickamer, “The effect of pressure on zinc blende and wurtzite structures,” J. Phys. Chem. Solids 11, 140 (1959).

M. Hass, B. W. Henvis, “Infrared lattice reflection spectra of III–V compound semiconductors,” J. Phys. Chem. Solids 23, 1099 (1962).

H. J. Hrostowski, C. S. Fuller, “Extension of infrared spectra of III–V compounds by lithium diffusion,” J. Phys. Chem. Solids 4, 157 (1958).

M. Cardona, “Optical determination of the conductron band structure of GaSb,” J. Phys. Chem. Solids 17, 336 (1961).

G. Picus, E. Burstein, B. W. Henvis, M. Hass, “Infrared lattice vibration studies of polar character in compound semiconductors,” J. Phys. Chem. Solids 8, 282 (1958).

J. C. Woolley, K. W. Blazey, “Reflectivity spectra of GaSb–InSb and GaAs–InAs alloys,” J. Phys. Chem. Solids 25, 713 (1964). See also Refs. 15, 36, and 39.

J. Phys. Soc. Jap.

A. Mitsuishi, “Optical properties of CdTe in the far infrared region,” J. Phys. Soc. Jap. 16, 533 (1961).

A. Mitsuishi, H. Yoshinaga, S. Fujita, “Far-infrared absorption of sulfides, selenides, and tellurides of zinc and cadmium,” J. Phys. Soc. Jap. 13, 1235 (1958).

J. Res. Nat. Bur. Stand.

L. R. Blaine, “A far-infrared vacuum grating spectrometer,” J. Res. Nat. Bur. Stand. 67, 207 (1963).

J. Solid State Electron.

R. F. Potter, H. H. Wieder, “Some galvanomagnetic and optical properties of Cu doped InSb films,” J. Solid State Electron. 7, 253 (1964).

Jap. J. Appl. Phys.

A. Manabe, A. Mitsuishi, H. Yoshinaga, “Infrared lattice reflection spectra of II–VI Compounds,” Jap. J. Appl. Phys. 6, 593 (1967).

Nachr. Akad. Wiss. Göttingen

W. Martienssen, “Der Einfluss der Temperatur auf die Kante der optischen Eigenabsorption von Alkalihalogeniden,” Nachr. Akad. Wiss. Göttingen, Math.-Phys. K1 11, 257 (1955).

Opt. Spectrosc.

N. K. Kisileva, N. N. Pribytkova, “Determination of the optical constants of Ge and CdTe by the reflection method,” Opt. Spectrosc. 10, 133 (1961).

S. I. Kovtunenko, V. V. Sobolev, “Reflection Spectra of Ge, InSB, GaSb, InAs, and GaP,” Opt. Spectrosc. 21, 186 (1966).

Phys. Rev.

D. T. F. Marple, “Effective electron mass in CdTe,” Phys. Rev. 129, 2466 (1963).

P. W. Davis, T. S. Shilliday, “Some optical properties of cadmium telluride,” Phys. Rev. 118, 1020 (1960).

D. A. Jenny, R. H. Bube, “Superconducting CdTe,” Phys. Rev. 96, 1190 (1954).

C. Barcus, A. Perlmutter, J. Callaway, “Effective mass of electrons in gallium arsenide,” Phys. Rev. 111, 167 (1958).

R. Braunstein, L. Magid, “Optical absorption in p-type gallium arsenide,” Phys. Rev. 111, 480 (1958).

J. J. Hopfield, D. G. Thomas, “Theoretical and experimental effects of spatial dispersion on the optical properties of crystals,” Phys. Rev. 132, 563 (1963).

C. C. Klick, “Luminescence and photoconductivity in cadmium sulphide at the absorption edge,” Phys. Rev. 89, 274 (1953).

M. Cardona, “Fundamental reflectivity and band structure of ZnTe, CdTe, and HgTe,” Phys. Rev. 131, 98 (1963).

D. G. Thomas, J. J. Hopfield, “Exciton spectrum of cadmium sulphide,” Phys. Rev. 116, 573 (1959).

R. Williams, “Electric field light absorption in CdS,” Phys. Rev. 117, 1487 (1960).

R. Frerichs, “The photo-conductivity of incomplete phosphors,” Phys. Rev. 72, 594 (1947).

L. R. Furlong, “Low temperature luminescence of cadmium sulphide,” Phys. Rev. 95, 1086 (1954).

L. R. Furlong, C. F. Ravilious, “Low-temperature luminescence and absorption of CdS,” Phys. Rev. 98, 954 (1955).

M. Cardona, “Reflectivity of semiconductors with wurtzite structure,” Phys. Rev. 129, 1068 (1963).

R. Geick, C. H. Perry, G. Rupprecht, “Normal modes in hexagonal boron nitride,” Phys. Rev. 146, 543 (1966).
[CrossRef]

P. J. Gielisse et al., “Lattice infrared spectra of boron nitride and boron monophosphide,” Phys. Rev. 155, 1039 (1967).
[CrossRef]

E. G. Schneider, H. M. O’Bryan, “The absorption of ionic crystals in the ultraviolet,” Phys. Rev. 51, 293 (1937).

K. Teegarden, “Fine structure in the exciton bands of the alkali halides,” Phys. Rev. 108, 660 (1957). See also Refs. 13, 134, 137–139, and 141.

J. E. Eby, K. J. Teegarden, D. B. Dutton, “Ultraviolet absorption of alkali halides,” Phys. Rev. 116, 1099 (1959).

R. Newman, “Optical properties of n-type InP,” Phys. Rev. 111, 1518 (1958).

R. M. Talley, D. P. Enright, “Photovoltaic effect in InAs,” Phys. Rev. 95, 1092 (1954). See also Refs. 39, 49, 51, 54–58, 61–64, 70, 79, 81, 82, 103, 104, 109, 120, and 122.

R. J. Keyes, S. Zwerdling, S. Foner, H. H. Kolm, B. Lax, “Infrared cyclotron resonance in Bi, InSb, and InAs with high pulsed magnetic fields,” Phys. Rev. 104, 1804 (1956).

S. W. Kurnich, J. M. Powell, “Optical absorption in pure single crystal InSb at 298° and 78°K,” Phys. Rev. 116, 597 (1959).

W. G. Spitzer, H. Y. Fan, “Infrared absorption in indium antimonide,” Phys. Rev. 99, 1893 (1955).

W. G. Spitzer, H. Y. Fan, “Determination of optical constants and carrier effective mass of semiconductors,” Phys. Rev. 106, 882 (1957).

F. Stern, R. M. Talley, “Impurity band in semiconductors with small effective mass,” Phys. Rev. 100, 1638 (1955).

M. Tanenbaum, H. B. Briggs, “Optical properties of indium antimonide,” Phys. Rev. 91, 1561 (1963).

H. Yoshinaga, “Reflectivity of several crystals in the far infrared region between 20 and 200 microns,” Phys. Rev. 100, 753 (1955).

H. Yoshinaga, R. A. Oetjen, “Optical properties of indium antimonide in the region from 20 to 200 microns,” Phys. Rev. 101, 526 (1956). See also Refs. 39, 46, 49, 51, 54–56, 60–64, 70, 79, 81, and 82.

W. Kaiser, H. Y. Fan, “Infrared absorption of indium antimonide,” Phys. Rev. 98, 966 (1955).

G. W. Gobeli, H. Y. Fan, “Infrared absorption and valence band in indium antimonide,” Phys. Rev. 119, 613 (1960).

H. J. Hrostowski, G. H. Wheatley, W. F. Flood, “Anomalous optical behavior of InSb,” Phys. Rev. 95, 1683 (1954).

W. P. Dumke, “Indirect transitions at the center of the Brillouin zone with application to InSb, and a possible new effect,” Phys. Rev. 108, 1419 (1957).

E. Blount, J. Callaway, M. Cohen, W. Dumke, J. Phillips, “Infrared absorption of indium antimonide,” Phys. Rev. 101, 563 (1956).

R. G. Breckenridge, B. F. Blunt, W. R. Hosler, H. P. R. Frederikse, J. H. Becker, W. Oshinky, “Electrical and optical properties of intermetallic compounds: I. indium antimonide,” Phys. Rev. 96, 571 (1954).

E. Burstein, “Anomalous optical absorption limit in InSb,” Phys. Rev. 93, 632 (1954).

E. Burstein, C. S. Picus, H. A. Gebbie, F. Blatt, “Magnetic optical band gap effect in InSb,” Phys. Rev. 103, 826 (1956).

E. Bustein, G. S. Picus, H. A. Gebbie, “Cyclotron resonance at infrared frequencies in InSb at room temperature,” Phys. Rev. 103, 825 (1956).

H. R. Phillips, “Optical properties of semiconductors,” Phys. Rev. 129, 1550 (1963).

M. D. Sturge, “Optical absorption of gallium arsenide between 0.6 and 2.75 eV,” Phys. Rev. 127, 768 (1962).

D. S. Kleinman, W. G. Spitzer, “Infrared lattice absorption of GaP,” Phys. Rev. 118, 110 (1960).

L. J. Neuringer, “Effect of pressure on the absorption edge of tellurium,” Phys. Rev. 98, 1193 (1955).

L. J. Neuringer, “Effect of pressure on the infrared absorption of semiconductors,” Phys. Rev. 113, 1495 (1959).

T. S. Moss, “Changes in the activation energy of tellurium,” Phys. Rev. 79, 1011 (1950).

J. J. Loferski, P. H. Miller, “Infrared properties of tellurium,” Phys. Rev. 83, 876 (1951).

J. J. Loferski, “Optical properties in single crystals of tellurium,” Phys. Rev. 87, 905 (1952).

J. J. Loferski, “Infrared crystal properties of single crystals of tellurium,” Phys. Rev. 93, 707 (1954).

W. G. Spitzer, R. C. Miller, D. A. Kleinman, L. E. Howarth, “Far infrared dielectric dispersion in BaTiO3, SrTiO3, and TiO2,” Phys. Rev. 126, 1710 (1962).

J. S. Blakemore, K. C. Nomura, “Intrinsic optical absorption in tellurium,” Phys. Rev. 127, 1024 (1962).

R. S. Caldwell, H. Y. Fan, “Infrared absorption of tellurium,” Phys. Rev. 94, 1427 (1954).

J. A. Noland, “Optical absorption of single-crystal strontium titanate,” Phys. Rev. 94, 724 (1954).

F. Stern, R. M. Talley, “Optical absorption in p-type indium arsenide,” Phys. Rev. 108, 158 (1957).

Phys. Rev. Lett.

K. C. Nomura, “Optical activity in tellurium,” Phys. Rev. Lett. 5, 500 (1960).

H. R. Phillips, “Interband transitions in groups 4, 3–5, and 2–6 semiconductors,” Phys. Rev. Lett. 8, 59 (1962).

R. Kaplan, E. D. Palik, R. F. Wallis, S. Iwasa, E. Burstein, Y. Sawada, “Infrared absorption by coupled collective cyclotron excitation-longitudinal-optic phonon modes in InSb,” Phys. Rev. Lett. 18, 159 (1967).

J. J. Hopfield, D. G. Thomas, “Photon momentum effects in the magneto-optics of excitons,” Phys. Rev. Lett. 4, 357 (1960).

Phys. Status Solidi

H. Keller, J. Stuke, “Elektrische und optische Eigenschaften von amorphem Tellur,” Phys. Status Solidi 8, 831 (1965).

Physica

C. Z. van Doorn, D. de Nobel, “Luminescence, transmission, and width of the energy gap of CdTe single crystals,” Physica 22, 338 (1956).

H. Welker, “Semiconducting intermetallic compounds,” Physica 20, 893 (1954).

Proc. Phys.

T. S. Moss, “Photoconductivity in the elements,” Proc. Phys. 64A, 590 (1951).

Proc. Phys. Soc.

T. S. Moss, “Optical properties of tellurium in the infrared,” Proc. Phys. Soc. 65B, 62 (1952).

T. S. Moss, “Infrared photoconductivity in layers of tellurium and arsenic,” Proc. Phys. Soc. 62A, 264 (1949).

F. A. Cunnell, T. J. Edmond, J. C. Richards, “Measurements on some semiconducting compounds with the zinc-blende structure,” Proc. Phys. Soc. 67B, 849 (1954).

S. J. Fray, F. A. Johnson, R. H. Jones, “Lattice absorption bands in indium antimonide,” Proc. Phys. Soc. 76, 939 (1960).

F. A. Cunnel, E. W. Saker, J. T. Edmond, “A note on the semiconducting compound InSb,” Proc. Phys. Soc. 66B, 1115 (1953).

Rep. Progr. Phys.

H. Y. Fan, “Infrared absorption in semiconductor,” Rep. Progr. Phys. 14, 107 (1956).

Solid State Commun.

P. Grosse, M. Lutz, W. Richter, “Nachweis ultrarotaktiver Gitterschwingungen in Tellur,” Solid State Commun. 5, 99 (1967).

Sov. Phys.–Doklady

E. F. Gross, A. A. Kaplianskii, B. V. Novikov, “Exciton structure of the spectral curves of the photoconductive effect in crystals,” Sov. Phys.–Doklady 1, 582 (1956).

Sov. Phys.–Solid State

M. S. Brodin, “Optical properties of CdS monocrystals,” Sov. Phys.–Solid State 2, 1926 (1961).

Z. Angew. Phys.

K. J. Planker, E. Kauer, “Bestimmung der effektiven Masse freier Ladungsträger in Halbleitern aus der Ultrarotabsorption,” Z. Angew. Phys. 12, 425 (1960). See also Refs. 28 and 29.

Z. Naturforsch.

F. Oswald, R. Schade, “Über die Bestimmung der optischen Konstanten von Halbleitern des Typus AIIIBVim Infraroten,” Z. Naturforsch. 9a, 611 (1954).

O. Folberth, F. Oswald, “Über die Halbleilereigenschaften von Galliumphosphid,” Z. Naturforsch. 99, 1050 (1954).

F. Oswald, “Optische Bestimmung der Temperaturabhängigkeit des Bandabstandes von Halblutern des Types AIIIBV,” Z. Naturforsch. 10a, 927 (1955).

Z. Phys.

H. Fesefeldt, “Der Einfluss der Temperatur auf die Absorptionsspektra der Alkalihalogenidkristalle,” Z. Phys. 64, 623 (1930).

R. Hilsch, R. W. Pohl, “Die in Luft messbaren ultravioletten Dispersionsfrequenzen der Alkalihalogenide,” Z. Phys. 57, 145 (1929).

R. Hilsch, R. W. Pohl, “Einige Dispersionfrequenzen der Alkalihalogenidkristalle im Schumanngebeit,” Z. Phys. 59, 812 (1930).

W. Flechsig, “Zur Lichtabsorption in verfarbten Alkalihalogeniden,” Z. Phys. 36, 605 (1926).

M. Cardona, “Optical investigations of the band structure of GaSb,” Z. Phys. 161, 99 (1961).

R. B. Barnes, “Die ultraroten Eigenfrequenzen der Alkalihalogenidkristalle,” Z. Phys. 75, 723 (1932).

E. Rütter, “Die ultrarote Durchlässigkeit von dünnen kathodischen Schichten und organischen Substanzen unterhalp 3 μ,” Z. Phys. 60, 1 (1930).

Other

J. Tauc, A. Abraham, “Reflection spectra of semiconductors with diamond and sphalerite structures,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

J. Tauc, “Optical properties of semiconductors,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

F. Bassani, D. L. Greenway, G. Fischer, “Investigation of the band structure of the layer compounds GaAs and GaSe,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

H. Ehrenreich, H. R. Phillip, “Optical properties of semiconductors in the ultraviolet,” Proceedings of the International Conference in Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

S. Iwasa, I. Balslev, E. Burstein, “The fundamental infrared lattice vibration spectra of GaAs,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

F. A. Johnson, W. Cochran, “The application of the shell model to infrared lattice absorption bands of semiconductors,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

M. Cardona, “Temperature dependence of the refractive index and the polarizability of free carriers in some III–V semiconductors,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

F. Lukes, E. Schmidt, “The fine structure and the temperature dependence of the reflectivity and optical constants of Ge, Si, and III–V compounds,” Proceedings of the Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

E. J. Johnson, I. Filinski, H. Y. Fan, “Absorption and emission of excitons and impurities in GaSb,” Proceedings of the International Conference on Semiconductor Physics, Exeter 1962 (Physical Society, 1962).

M. Cardona, G. Harbeke, “Optical properties of wurtzite-type crystals in the fundamental absorption region,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

M. Balkanski, J. M. Besson, R. LeToullec, “Dispersion curves of phonons in hexagonal cadmium sulphide obtained by infrared spectroscopy,” Proceedings of the International Conference on Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

J. J. Hopfield, D. G. Thomas, “Magneto-optic absorption spectrum of CdS,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

A. Mitsuishi, A. Manabe, H. Yoshinaga, S. Ibuki, H. Komiya, “Infrared absorption of localized vibration due to lithium in zinc selenide and cadmium sulphide,” Proceedings of the International Conference of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

D. L. Stierwalt, R. F. Potter, “Infrared spectral emittance of Si, Ge, and CdS,” Proceedings of the International Conference on Physics of Semiconductors, Exeter 1962 (Physical Society, 1962).

S. S. Ballard, K. A. McCarthy, W. L. Wolfe, “Optical materials for infrared instrumentation,” IRIA Rep. No. 2389–11–S, University of Michigan, April1961.

D. L. Stierwalt, R. F. Potter, “Infrared spectral emittance of indium phosphide,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964). See also refs. 36, 46, 49, 51, 57, 58, 63, and 79.

J. R. Dixon, “Optical absorption mechanisms in indium arsenide” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

F. Stern, “Calculation of optical absorption in III–V semiconductors” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

D. L. Stierwalt, “Far infrared lattice bands in indium antimonide,” Proceedings of the International Conference on the Physics of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

B. Lax, “Magneto-spectroscopy in semiconductors” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

T. S. Moss, A. K. Walton, “Infrared Faraday effect in semiconductors” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

S. D. Smith, C. R. Pidgeon, “Ellipticity associated with free carrier Faraday rotation in semiconductors,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

W. K. Subashiev, S. A. Abagyan, “Band structure of GaAsxP1−xcrystals,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964). See also Refs. 15, 39, 46, 49, 51, 55–58, and 61–64.

I. Balslev, “Interband piezo-absorption in GaP,” Proceedings of the International Conference on the Physics of Semiconductors, Kyoto, 1966 (Physical Society of Japan, 1966).

R. F. Potter, D. L. Stierwalt, “Reststrahlen frequencies for mixed GaAsySb1−ysystem,” Proceedings of the International Conference on the Physics of Semiconductors, Paris 1964 (Dunod, Paris, 1964).

S. D. Smith, R. E. V. Chaddock, A. R. Goodwin, “Localized modes of substitutional impurities in intermetallic compounds,” Proceedings of the International Conference on the Physics of Semiconductors, Kyoto 1966 (Physical Society of Japan, 1966).

F. A. Johnson, S. J. Jones, R. H. Jones, “Lattice absorption bands in indium antimonide,” in Semiconductor Physics, G. Schmidt, Ed. (Academic Press Inc., New York, 1962).

D. L. Greenway, M. Cardona, “Reflectivity measurements on InSb–In2Te3and InAs–In2Te3alloys and on pure InSb, InAs, and In2Te3,” Proceedings of the International Conference on Semiconductor Physical Exeter 1962 (Physical Society, 1962).

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