Compact and broadband silicon-based polarization beam splitter using asymmetric directional couplers embedded with subwavelength gratings and slots

Sijie Dai; Jinbiao Xiao

doi:10.1364/AO.444129

Applied Optics
Vol. 61,
Issue 1,
pp. 126-134
(2022)
•https://doi.org/10.1364/AO.444129

Compact and broadband silicon-based polarization beam splitter using asymmetric directional couplers embedded with subwavelength gratings and slots

Sijie Dai and Jinbiao Xiao

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Sijie Dai and Jinbiao Xiao, "Compact and broadband silicon-based polarization beam splitter using asymmetric directional couplers embedded with subwavelength gratings and slots," Appl. Opt. 61, 126-134 (2022)

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- Integrated Optics
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About this Article
History
- Original Manuscript: September 24, 2021
- Revised Manuscript: November 24, 2021
- Manuscript Accepted: November 24, 2021
- Published: December 21, 2021

Abstract

A compact and broadband silicon-based polarization beam splitter (PBS) is proposed and investigated in detail, where the two arms of the directional coupler (DC) are, respectively, embedded with subwavelength gratings (SWGs) and vertical slots so that field distributions for the TE mode are significantly changed, effectively weakening coupling strength, whereas those for the TM mode are almost unaffected, nearly analogous to the DC with strip waveguides. By carefully optimizing structural parameters, efficient coupling will emerge between the two waveguides for the TM mode, while TE mode will be confined in the SWG-assisted strip waveguide. Consequently, the two modes can be effectively separated, and thus the realization of a PBS is accomplished. Results show that a compact PBS with a coupling length of 6.45 µm is achieved, together with the extinction ratio (ER) of 27.54/31.88 dB, the insertion loss of 0.12/0.14 dB, and the reflection loss of ${-}{43.67/ {-} 30.50}\;{\rm dB}$, respectively, for TE/TM mode at the wavelength of 1.55 µm. The bandwidth, for both modes, is up to 230/100 nm when ER is larger than 15/20 dB. In addition, fabrication tolerances to the critical structural parameters and field evolution through the proposed device are analyzed.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Parameters	$H$	$W_{1}$	$W_{5}$	$W_{6}$	$L_{1}$
Value	250 nm	450 nm	250 nm	350 nm	2.5 µm
Parameters	$L_{2}$	$L_{4}$	$L_{5}$	$R$	$θ$
Value	2 µm	1.2 µm	4 µm	4 µm	30°

Cases	$a$	$W_{2}$	$W_{3}$	$W_{g 2}$	$L_{3}$
I	80 nm	160 nm	630 nm	350 nm	6.3 µm
II	80 nm	180 nm	620 nm	340 nm	6.3 µm
III	80 nm	190 nm	630 nm	330 nm	6.45 µm

Cases	ER (dB)	IL (dB)	RL (dB)	${B w}_{20} / B w_{15}$
I	TE: 27.06 TM: 27.38	TE: 0.16 TM: 0.26	TE: –34.48 TM: –32.15	100/175 nm
II	TE: 27.32 TM: 28.59	TE: 0.14 TM: 0.17	TE: −34.59 TM: −29.18	100/200 nm
III	TE: 27.54 TM: 31.88	TE: 0.12 TM: 0.14	TE: –43.67 TM: –30.50	100/230 nm

Structures	ER	IL	Total Length	Bandwidth	Fabrication
PBS using asymmetrical DC [22]	$> 20 d B$	$< 0.11 d B$	6.9 µm	160 nm ( $E R > 10 d B$ )	No
PBS using asymmetrical DC [23]	$> 25 d B$	$< 0.2 d B$	18 µm	56 nm ( $E R > 14 d B$ )	Yes
PBS using asymmetrical DC [25]	$> 30 d B$	$< 0.25 d B$	15 µm	100 nm ( $E R > 30 d B$ )	Yes
PBS using symmetrical DC [34]	$> 23.4 d B$	$> 0.13 d B$	16 µm	40 nm ( $E R > 15 d B$ )	No
PBS using triple waveguide [32]	$> 27 d B$	$< 0.3 d B$	6.5 µm	60 nm ( $E R > 20 d B$ ) 100 nm ( $E R > 10 d B$ )	No
PBS using SWG-assisted MMI [33]	$> 17.3 d B$	$< 1.25 d B$	21.8 µm	350 nm ( $E R > 12 d B$ )	No
This work	$> 27 d B$	$< 0.14 d B$	16.5 µm	100 nm ( $E R > 20 d B$ ) 230 nm ( $E R > 15 d B$ )	No

Parameters	$H$	$W_{1}$	$W_{5}$	$W_{6}$	$L_{1}$
Value	250 nm	450 nm	250 nm	350 nm	2.5 µm
Parameters	$L_{2}$	$L_{4}$	$L_{5}$	$R$	$θ$
Value	2 µm	1.2 µm	4 µm	4 µm	30°

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Applied Optics