Abstract

In this paper, a complete investigation and 2D simulation of electrical crosstalk in a setup with three neighboring pinned photodiode complementary metal-oxide-semiconductor (CMOS) image sensor pixels are performed. Electrical crosstalk characterization as a function of pixel size and epitaxial layer doping concentration is presented. The simulation results in constant epitaxial layer doping concentration show that the ratio of external quantum efficiency to electrical crosstalk is linear with respect to pixel size. In the pixel size of 3.7 µm, the turning point in the correlation trend between external quantum efficiency and electrical crosstalk from a small pixel size to a large one occurs. In addition, the simulation results show the optimal values of external quantum efficiency and electrical crosstalk occurs at ${{1}} \times {{1}}{{{0}}^{14}}$ (${\rm{c}}{{\rm{m}}^{- 3}}$) in a constant pixel size. Moreover, the ratio of external quantum efficiency to the electrical crosstalk decreases linearly with respect to the epitaxial layer doping considering above ${{1}} \times {{1}}{{{0}}^{14}}$ (${\rm{c}}{{\rm{m}}^{- 3}}$).

© 2021 Optical Society of America

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