Electrical crosstalk analysis in a pinned photodiode CMOS image sensor array

Mehdi Khabir; Hamzeh Alaibakhsh; Mohammad Azim Karami

doi:10.1364/AO.431366

Applied Optics
Vol. 60,
Issue 31,
pp. 9640-9650
(2021)
•https://doi.org/10.1364/AO.431366

Electrical crosstalk analysis in a pinned photodiode CMOS image sensor array

Mehdi Khabir, Hamzeh Alaibakhsh, and Mohammad Azim Karami

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Mehdi Khabir, Hamzeh Alaibakhsh, and Mohammad Azim Karami, "Electrical crosstalk analysis in a pinned photodiode CMOS image sensor array," Appl. Opt. 60, 9640-9650 (2021)

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Abstract

In this paper, a complete investigation and 2D simulation of electrical crosstalk in a setup with three neighboring pinned photodiode complementary metal-oxide-semiconductor (CMOS) image sensor pixels are performed. Electrical crosstalk characterization as a function of pixel size and epitaxial layer doping concentration is presented. The simulation results in constant epitaxial layer doping concentration show that the ratio of external quantum efficiency to electrical crosstalk is linear with respect to pixel size. In the pixel size of 3.7 µm, the turning point in the correlation trend between external quantum efficiency and electrical crosstalk from a small pixel size to a large one occurs. In addition, the simulation results show the optimal values of external quantum efficiency and electrical crosstalk occurs at ${{1}} \times {{1}}{{{0}}^{14}}$ (${\rm{c}}{{\rm{m}}^{- 3}}$) in a constant pixel size. Moreover, the ratio of external quantum efficiency to the electrical crosstalk decreases linearly with respect to the epitaxial layer doping considering above ${{1}} \times {{1}}{{{0}}^{14}}$ (${\rm{c}}{{\rm{m}}^{- 3}}$).

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Parameters	Symbol	Value	Unit
Shallow trench isolation width	$L_{S T I}$	0.1	µm
STI to PPD width	$L_{S T I t o P P D}$	0.05	µm
PPD width	$L_{P P D}$	1.2	µm
Transfer gate width	$L_{T G}$	0.7	µm
Floating diffusion width	$L_{F D}$	0.1	µm
Reset gate width	$L_{R S T - G}$	0.3	µm
Reset drain width	$L_{R S T - D}$	0.1	µm
Substrate height	$H_{s u b}$	3	µm
Oxide height	$H_{o x i d e}$	0.003	µm
STI length	$H_{S T I}$	0.5	µm
Transfer gate ON time	$T_{T G}$	30	µs
Reset gate ON time	$T_{R S T}$	50	µs
Integration time	$T_{i n t e g r a t i o n}$	100	µs
Interval time	$T_{i n t e r v a l}$	10	µs
Optical power	$P_{o p t}$	$3 \times 1 0^{- 4}$	W
Transfer gate voltage	TG	1.6	V
Reset gate voltage	RST	3	V
Substrate doping ( $p$ -type)	$S u b_{d o p i n g}$	$1 \times 1 0^{13}$	$c m^{- 3}$
Transfer gate doping ( $p$ -type)	${T G}_{d o p i n g}$	$6 \times 1 0^{16}$	$c m^{- 3}$
Floating diffusion doping ( $n$ -type)	${F D}_{d o p i n g}$	$1 \times 1 0^{19}$	$c m^{- 3}$
Trench passivation doping ( $p$ -type)	${T P}_{d o p i n g}$	$1 \times 1 0^{18}$	$c m^{- 3}$
Anode doping ( $p$ -type)	$A n o d e_{d o p i n g}$	$1 \times 1 0^{19}$	$c m^{- 3}$
Pinning implant doping ( $p$ -type)	$P i n_{d o p i n g}$	$1 \times 1 0^{19}$	$c m^{- 3}$
FD surrounding doping ( $p$ -type)	${F D S}_{d o p i n g}$	$3 \times 1 0^{16}$	$c m^{- 3}$
Drain doping ( $n$ -type)	$D r a i n_{d o p i n g}$	$1 \times 1 0^{19}$	$c m^{- 3}$
PPD doping ( $n$ -type)	${P P D}_{d o p i n g}$	$3 \times 1 0^{15}$	$c m^{- 3}$

PS (µm)	5.7	4.7	3.7	2.7
Dark Electrons ( $# e^{-}$ )	184	136	86	38
$n_{1}$ ( $# e^{-}$ )	100	101	107	113
$n_{2}$ ( $# e^{-}$ )	4529	3406	2285	1148
$n_{3}$ ( $# e^{-}$ )	46	47	54	68

	$P S = 2.7 µ m$		$P S = 3.7 µ m$		$P S = 4.7 µ m$		$P S = 5.7 µ m$
$λ$ (µm)	EQE	CTK	EQE	CTK	EQE	CTK	EQE	CTK
0.40	0.694	1.28	0.696	1.58	0.696	1.72	0.686	1.77
0.45	0.767	1.18	0.762	1.30	0.763	1.40	0.763	1.44
0.50	0.771	2.15	0.781	1.70	0.784	1.59	0.786	1.53
0.55	0.724	4.24	0.748	2.72	0.756	2.22	0.759	1.97
0.60	0.599	6.51	0.631	3.97	0.642	3.07	0.647	2.63
0.65	0.452	8.03	0.482	4.92	0.493	3.78	0.497	3.23
0.70	0.361	8.79	0.388	5.43	0.397	4.19	0.401	3.60
0.75	0.263	9.58	0.284	6.08	0.291	4.80	0.295	4.19
0.80	0.188	10.40	0.204	6.82	0.208	5.54	0.212	4.94
0.85	0.128	11.33	0.139	7.90	0.143	6.67	0.145	5.31
r	−0.9539		−0.9715		−0.9799		−0.9888

	EQE/ECTK, P1
PS (µm)	$λ = 0.50 µ m$	$λ = 0.55 µ m$	$λ = 0.60 µ m$	$λ = 0.65 µ m$	$λ = 0.70 µ m$	$λ = 0.75 µ m$	$λ = 0.80 µ m$	$λ = 0.85 µ m$
2.7	0.596	0.211	0.105	0.064	0.047	0.032	0.021	0.014
3.7	1.308	0.440	0.217	0.131	0.097	0.067	0.046	0.030
4.7	2.039	0.685	0.340	0.207	0.153	0.107	0.072	0.048
5.7	2.771	0.927	0.459	0.281	0.207	0.143	0.098	0.064
r	0.9999	0.9998	0.9998	0.9996	0.9997	0.9996	0.9999	0.9997

Parameters	Symbol	Unit
Speed of light	$c$	$m / s$
Planck’s constant	$h$	J.S
Electron/hole diffusion length	$L_{n} / L_{p}$	nm
Electron/hole lifetime	$τ_{n} / τ_{p}$	s
Absorption coefficient	$α$	$m^{- 1}$
Transmission coefficient	$T_{t r a n s}$	%
Electron/hole recombination velocity	$S_{n} / S_{p}$	$m / s$
Electron/hole concentrations	$n_{p} / p_{n}$	$c m^{- 3}$
Incident radiation wavelength	$λ$	nm
Incident optical power	$P_{o p t}$	w
Optical generation rate	$G (y)$	$s^{- 1} m^{- 3}$
Photon flux	$Φ (y)$	$s^{- 1} m^{- 3}$
Photon flux at the surface	$Φ_{0}$	$s^{- 1} m^{- 3}$
Junction depth	$y_{j}$	nm
Wafer thickness	$y_{w}$	nm
Diffusion width	$x_{a a}$	nm
Diffusion depths	$y_{a a}$	nm
Device width	$x_{L}$	nm
Depletion region thickness (y-direction)	$W_{A, B}$ ( $W_{x}$ )	nm
Depletion region thickness ( $x$ direction)	$W_{L A, B}$	nm
Distance depletion region to PD	$x_{s A, B}$	nm
Effective barrier height	$φ_{v = 0.6}$	volt
Temperature in Kelvin	T	K
Boltzmann’s constant	$K_{B}$	$J \cdot K^{- 1}$

ELD ( $c m^{- 3}$ )	1e13	5e13	1e14	5e14	1e15	5e15
Potential of M (V)	0.992	0.982	0.971	0.883	0.786	0.228
Potential of N (V)	0.926	0.914	0.900	0.798	0.687	0.087

ELD ( $c m^{- 3}$ )	5e14	1e14	5e13	1e13
Dark Electro $n$ ( $# e^{-}$ )	45	56	59	61
$n_{1}$ ( $# e^{-}$ )	84	40	34	30
$n_{2}$ ( $# e^{-}$ )	1208	1283	1292	1299
$n_{3}$ ( $# e^{-}$ )	43	13	9	7

	$E L D = 1 \times 1 0^{13}$ ( $c m^{- 3}$ )		$E L D = 5 \times 1 0^{13}$ ( $c m^{- 3}$ )		$E L D = 1 \times 1 0^{14}$ ( $c m^{- 3}$ )		$E L D = 5 \times 1 0^{14}$ ( $c m^{- 3}$ )		$E L D = 1 \times 1 0^{15}$ ( $c m^{- 3}$ )
$λ$ (µm)	EQE	CTK	EQE	CTK	EQE	CTK	EQE	CTK	EQE	CTK
0.40	0.698	2.05	0.698	1.98	0.698	1.88	0.695	1.51	0.694	1.28
0.45	0.765	1.66	0.764	1.60	0.764	1.55	0.761	1.28	0.767	1.18
0.50	0.788	1.70	0.787	1.70	0.786	1.70	0.778	1.92	0.771	2.15
0.55	0.762	2.16	0.760	2.23	0.758	2.36	0.740	3.38	0.724	4.24
0.60	0.649	2.87	0.647	3.04	0.644	3.30	0.619	5.14	0.599	6.51
0.65	0.500	3.55	0.498	3.75	0.495	4.09	0.471	6.40	0.452	8.03
0.70	0.404	3.95	0.402	4.18	0.399	4.54	0.378	7.03	0.361	8.79
0.75	0.297	4.62	0.295	4.87	0.293	5.20	0.276	7.80	0.263	9.58
0.80	0.213	5.47	0.212	5.69	0.210	6.01	0.198	8.69	0.188	10.40
0.85	0.147	6.83	0.146	6.98	0.144	7.20	0.135	9.68	0.128	11.33
r	−0.97883		−0.98168		−0.98192		−0.96413		−0.95394

Abstract

Data Availability

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Figures (16)

Tables (8)

Equations (26)

Applied Optics