Terahertz photoconductive antenna based on antireflection dielectric metasurfaces with embedded plasmonic nanodisks

Xiao-Qiang Jiang; Xiao-Qiang Jiang; Wen-Hui Fan; Wen-Hui Fan; Wen-Hui Fan; Chao Song; Xu Chen; Qi Wu; Qi Wu

doi:10.1364/AO.431678

Applied Optics
Vol. 60,
Issue 26,
pp. 7921-7928
(2021)
•https://doi.org/10.1364/AO.431678

Terahertz photoconductive antenna based on antireflection dielectric metasurfaces with embedded plasmonic nanodisks

Xiao-Qiang Jiang, Wen-Hui Fan, Chao Song, Xu Chen, and Qi Wu

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Xiao-Qiang Jiang, Wen-Hui Fan, Chao Song, Xu Chen, and Qi Wu, "Terahertz photoconductive antenna based on antireflection dielectric metasurfaces with embedded plasmonic nanodisks," Appl. Opt. 60, 7921-7928 (2021)

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Abstract

By taking advantage of dielectric metasurfaces and plasmonic nanostructures, a terahertz photoconductive antenna (THz-PCA) is proposed and investigated in detail. The designed dielectric metasurfaces can reduce the optical reflection down to 1.4% and accelerate the switching process (electric conductive to resistive) that broadens the THz spectrum emitted from THz-PCA. Simultaneously, the embedded plasmonic nanostructures can realize 11.2 times enhancement in local electric field without affecting the switching process and the damage threshold of the THz-PCA. Simulated results indicate that the proposed THz-PCA is 70.56 times stronger in THz radiation power than that of the traditional THz-PCA. The significant enhancement ensures the proposed THz-PCA has great prospects in promoting THz technology based on the THz-PCA.

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Corrections

Xiao-Qiang Jiang, Wen-Hui Fan, Chao Song, Xu Chen, and Qi Wu, "Terahertz photoconductive antenna based on antireflection dielectric metasurface with embedded plasmonic nanodisks: erratum," Appl. Opt. 61, 5010-5010 (2022)
https://opg.optica.org/ao/abstract.cfm?uri=ao-61-17-5010

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Symbol	Description	Value
$λ$	Free-space wavelength	800 [nm]
$P_{a v e}$	Average laser power	10 [mW]
$f_{p}$	Laser repetition rate	80 [MHz]
$x_{0}$	Pulse $x$ -axis center location	2 [µm]
$t_{0}$	pulse center location (time)	1 [ps]
$D_{x /} D_{y}$	Pulse half-power beam width ( $x / y$ direction)	5/5 [µm]
$D_{t}$	Laser pulse duration	200 [fs]
$n_{1} + {i k}_{1}$	LT-GaAs at 800 nm	$3.68 + 0.06$ [34]
$n_{2} + {i k}_{2}$	Au at 800 nm	$0.15 + 4.91$ [35]
$μ_{r}$	Magnetic permeability (all)	1
${\hat{a}}_{e}$	Polarization vector	${\hat{a}}_{x}$

Symbol	Description	Value
$ε_{r}$	LT-GaAs	13.6
$N_{D}$	Donor doping	$1.3 \times 10^{16} [{1 / c m}^{3}]$
$N_{A}$	Acceptor doping	$0 [{1 / c m}^{3}]$
$μ_{n}$	Electron mobility	$0.85 [m^{2} / V / s]$
$μ_{p}$	Hole mobility	$0.04 [m^{2} / V / s]$
$E_{g}$	Bandgap	1.424 [V]
$χ$	Electron affinity	4.07 [V]
$T$	Room temperature	300 [K]
$N_{c}$	Conduction band density	$2.18 \times 10^{- 23} [{1 / m}^{3}]$
$N_{v}$	Valence band density	$5.43 \times 10^{- 24} [{1 / m}^{3}]$
$τ_{n} / τ_{p}$	Electron/hole lifetime	0.3 [ps]/0.4 [ps]
$V_{b i a s}$	DC bias voltage	30 [V]

Symbol	Description	Value
$λ$	Free-space wavelength	800 [nm]
$P_{a v e}$	Average laser power	10 [mW]
$f_{p}$	Laser repetition rate	80 [MHz]
$x_{0}$	Pulse $x$ -axis center location	2 [µm]
$t_{0}$	pulse center location (time)	1 [ps]
$D_{x /} D_{y}$	Pulse half-power beam width ( $x / y$ direction)	5/5 [µm]
$D_{t}$	Laser pulse duration	200 [fs]
$n_{1} + {i k}_{1}$	LT-GaAs at 800 nm	$3.68 + 0.06$ [34]
$n_{2} + {i k}_{2}$	Au at 800 nm	$0.15 + 4.91$ [35]
$μ_{r}$	Magnetic permeability (all)	1
${\hat{a}}_{e}$	Polarization vector	${\hat{a}}_{x}$

Symbol	Description	Value
$ε_{r}$	LT-GaAs	13.6
$N_{D}$	Donor doping	$1.3 \times 10^{16} [{1 / c m}^{3}]$
$N_{A}$	Acceptor doping	$0 [{1 / c m}^{3}]$
$μ_{n}$	Electron mobility	$0.85 [m^{2} / V / s]$
$μ_{p}$	Hole mobility	$0.04 [m^{2} / V / s]$
$E_{g}$	Bandgap	1.424 [V]
$χ$	Electron affinity	4.07 [V]
$T$	Room temperature	300 [K]
$N_{c}$	Conduction band density	$2.18 \times 10^{- 23} [{1 / m}^{3}]$
$N_{v}$	Valence band density	$5.43 \times 10^{- 24} [{1 / m}^{3}]$
$τ_{n} / τ_{p}$	Electron/hole lifetime	0.3 [ps]/0.4 [ps]
$V_{b i a s}$	DC bias voltage	30 [V]

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Figures (9)

Tables (2)

Equations (10)

Applied Optics