Time-delay signature cancellation and bandwidth enhancement based on phase-modulation injection using chaotic signals

PengBo Liu; ShengHai Zhang; XiaoXu Zhang; TianAn Wu

doi:10.1364/AO.423716

Applied Optics
Vol. 60,
Issue 17,
pp. 5245-5251
(2021)
•https://doi.org/10.1364/AO.423716

Time-delay signature cancellation and bandwidth enhancement based on phase-modulation injection using chaotic signals

PengBo Liu, ShengHai Zhang, XiaoXu Zhang, and TianAn Wu

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PengBo Liu, ShengHai Zhang, XiaoXu Zhang, and TianAn Wu, "Time-delay signature cancellation and bandwidth enhancement based on phase-modulation injection using chaotic signals," Appl. Opt. 60, 5245-5251 (2021)

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Abstract

We experimentally reveal the potential security risks for chaotic semiconductor lasers caused by time-delay signature (TDS). In order to eliminate TDS and enhance effective bandwidth, we propose a new scheme by introducing phase-modulation injection using Gaussian noise or pseudo-random binary sequence (PRBS) as phase-modulation signals. Our numerical results indicate that TDS elimination and bandwidth enhancement are obtained over a wide-parameter region of injection strength and frequency detuning. We further improve the scheme by using two channels of chaotic lasers to generate phase-modulation signals. Numerical simulation results show that the improved scheme is feasible, and TDS cancellation quality is always excellent in wide phase-modulation depth ranges.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Equations (4)

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Symbol	Parameters	Value
$α$	Linewidth enhancement factor	5
$τ_{p}$	Photon lifetime	2 ps
$g$	Differential gain coefficient	$1.5 \times 10^{4} s^{- 1}$
$τ_{n}$	Carrier lifetime	2 ns
$k$	Feedback strength	$31 n s^{- 1}$
$τ$	Feedback delay time	4 ns
$ω$	Optical angular frequency	$1.26 \times 10^{15} r a d / s$
$Δ f$	Detuning frequency	5 GHz
$ε$	Gain saturation coefficient	$5 \times 10^{- 7}$
$N_{0}$	Carrier density at transparency	$1.5 \times 10^{8}$
$e$	Electron charge	$1.602 \times 10^{- 19} C$
$I_{m, s}$	Bias current	29 mA
$η$	Injection strength	$35 n s^{- 1}$
$k_{p m}$	Phase-modulation depth	$π / 2$ rad

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Applied Optics