Abstract
We consider the GaAsP/AlGaAs/GaAs laser design with two different quantum wells for simultaneous generation of ${{\rm{TE}}_0}$ and ${{\rm{TM}}_0}$ modes having different frequencies in near-IR range. We theoretically investigate the possibility of effective difference frequency generation in the 7.5–8 and 10.5–11 THz regions in the laser design proposed. Resonant increase of second-order susceptibility in AlGaAs in these ranges provides sufficient generation efficiency. We demonstrate an output power-conversion factor for the difference frequencies in the 7.5–8 THz range to be up to ${{4 {-} 8}}\;{{\rm{MW}}^{- 1}}$ at room temperature in such a laser.
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