Investigation of a highly compact intracavity actively Q-switched cascade diamond Raman laser

Haolin Yang; Yue Chen; Kaili Ding; Fuqiang Jia; Kang Li; Kang Li; Nigel Copner; Nigel Copner; Antony Davies

doi:10.1364/AO.402102

Applied Optics
Vol. 59,
Issue 31,
pp. 9715-9721
(2020)
•https://doi.org/10.1364/AO.402102

Investigation of a highly compact intracavity actively Q-switched cascade diamond Raman laser

Haolin Yang, Yue Chen, Kaili Ding, Fuqiang Jia, Kang Li, Nigel Copner, and Antony Davies

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Haolin Yang, Yue Chen, Kaili Ding, Fuqiang Jia, Kang Li, Nigel Copner, and Antony Davies, "Investigation of a highly compact intracavity actively Q-switched cascade diamond Raman laser," Appl. Opt. 59, 9715-9721 (2020)

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Abstract

A laser diode (LD) pumped intracavity chemical vapor deposition (CVD) diamond cascade Raman laser is reported here. By rotating a Brewster plate (BP) in the laser resonator, the Raman laser with tunable output coupling rate is achieved. The highly compact diamond laser emitted 1240 nm and 1485 nm Stokes light simultaneously via optimization of the pumping direction. The slope efficiency of the intracavity diamond laser is improved by optimizing the output coupling rate and adjusting the repetition rate of the 1064 nm fundamental laser. Ultimately, the maximum slope efficiency of the first Stokes light (1240 nm) is 16.8%, and the corresponding output power is about 0.6 W. The maximum peak power is 2.5 kW when the power of 808 nm LD is 34.7 W.

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Materials	Diamond	Silicon	$B a ({N O}_{3})_{2}$	$K G d ({W O}_{4})_{2}$	$B a W O_{4}$	${Y V O}_{4}$
Raman shift ( ${c m}^{- 1}$ )	1332.2	521	1047.3	768,901	924	890,817
Thermal conductivity [W/(mk)]	2000	153	1.17	2.6 (a)	3	5.2
				3.8 (b)
				3.4 (c)
Thermal expansion ( $\times 10^{- 6}$ )	1.1	3	18.2	4.0 (a)	4-6	4.43
				1.6 (b)
				8.5 (c)
Gain coefficient at 1064 nm	10–12	2.33	3.25	7.3	6.4	4.23
References	—	[1]	[2]	[3]	[4–6]	[7]

Pump Polarization	First Stokes Light (1240 nm) Threshold (808 nm Fiber-Coupled Diode Laser) (W)	Second Stokes Light (1485 nm) Threshold (808 nm Fiber-Coupled Diode Laser) (W)
Parallel to the $⟨ 100 ⟩$	14.77	19.26
Parallel to the $⟨ 110 ⟩$	12	13.87
Parallel to the $⟨ 111 ⟩$	10.32	12

Materials	Diamond	Silicon	$B a ({N O}_{3})_{2}$	$K G d ({W O}_{4})_{2}$	$B a W O_{4}$	${Y V O}_{4}$
Raman shift ( ${c m}^{- 1}$ )	1332.2	521	1047.3	768,901	924	890,817
Thermal conductivity [W/(mk)]	2000	153	1.17	2.6 (a)	3	5.2
				3.8 (b)
				3.4 (c)
Thermal expansion ( $\times 10^{- 6}$ )	1.1	3	18.2	4.0 (a)	4-6	4.43
				1.6 (b)
				8.5 (c)
Gain coefficient at 1064 nm	10–12	2.33	3.25	7.3	6.4	4.23
References	—	[1]	[2]	[3]	[4–6]	[7]

Pump Polarization	First Stokes Light (1240 nm) Threshold (808 nm Fiber-Coupled Diode Laser) (W)	Second Stokes Light (1485 nm) Threshold (808 nm Fiber-Coupled Diode Laser) (W)
Parallel to the $⟨ 100 ⟩$	14.77	19.26
Parallel to the $⟨ 110 ⟩$	12	13.87
Parallel to the $⟨ 111 ⟩$	10.32	12

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Equations (4)

Applied Optics