Abstract
We present the design of ${{\rm Ge}_{1 - x}}{{\rm Sn}_x}$-on-Si waveguide photodetectors for the applications in the C- to U-bands. The GeSn photodetectors have been studied in respect to responsivity, dark current, and bandwidth, with light butt- or evanescent-coupled from an Si waveguide. With the introduction of 4.5% Sn into Ge, the GeSn waveguide PD with evanescent-coupling exhibits high responsivity of 1.25 A/W and 3 dB bandwidth of 123.1 GHz at 1.675 µm. Further increasing the Sn composition cannot improve the absorption in the U-band significantly but does lead to poorer thermal stability and higher dark current. This work suggests a promising avenue for future high-speed high-responsivity photodetection in the C- to U-bands.
© 2020 Optical Society of America
Full Article | PDF ArticleMore Like This
Xinyu Li, Qiang Xu, Ruogu Song, Jinyu Wang, Shuxiao Wang, Wencheng Yue, Wei Wang, Yan Cai, and Mingbin Yu
Appl. Opt. 63(8) 2101-2108 (2024)
Harshvardhan Kumar and Ankit Kumar Pandey
J. Opt. Soc. Am. B 40(6) 1427-1434 (2023)
XinYu Li, YuFei Liu, Ruogu Song, Chuan Li, ShuXiao Wang, WenCheng Yue, Zhijuan Tu, Xu Chen, Yan Cai, Wei Wang, and MingBin Yu
Opt. Express 31(2) 3325-3335 (2023)