Abstract

Two-dimensional (2D) materials have realized significant new applications in photonics, electronics, and optoelectronics. Among these materials is tungsten disulphide (${\mathrm{WS}}_2$), which is a 2D material that shows excellent optoelectronic properties, tunable/sizable bandgap in the visible range, and good absorption. A polycrystalline ${\mathrm{WS}}_2$ thin film is successfully deposited on a substrate using radio frequency magnetron sputtering at room temperature. The x-ray diffraction pattern reveals two hexagonal structured peaks along the (100) and (110) planes. Energy-dispersive x-ray spectroscopy reveals a non-stoichiometric ${\mathrm{WS}}_2$ film with 1.25 ratio of S/W for a 156.3 nm thick film, while Raman shifts are observed at the $E_{2g}^1$ and $A_{1g}$ phonon modes located at $350.70{\mathrm{cm}}^{-1}$ and $415.60{\mathrm{cm}}^{-1}$, respectively. A sandwiched heterojunction photodetector device is successfully fabricated and illuminated within the violet range at 441 nm and 10 V of bias voltage. The maximum photocurrent values are calculated as 0.95 μA, while the responsivity is observed at $169.3\mathrm{mA}{\mathrm{W}}^{-1}$ and detectivity $1.48\times {10}^8$ Jones at illuminated power of 0.6124 μm. These results highlight the adaptability of the present technique for large-scale applications as well as the flexibility to promote development of advanced optoelectronic devices.

© 2019 Optical Society of America

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