Design of modified InGaAs/InP one-sided junction photodiodes with improved response at high light intensity

Jie Xu; Xiupu Zhang; Ahmed Kishk

doi:10.1364/AO.57.009365

Applied Optics
Vol. 57,
Issue 31,
pp. 9365-9374
(2018)
•https://doi.org/10.1364/AO.57.009365

Design of modified InGaAs/InP one-sided junction photodiodes with improved response at high light intensity

Jie Xu, Xiupu Zhang, and Ahmed Kishk

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Jie Xu, Xiupu Zhang, and Ahmed Kishk, "Design of modified InGaAs/InP one-sided junction photodiodes with improved response at high light intensity," Appl. Opt. 57, 9365-9374 (2018)

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- Optical Devices, Sensors, and Detectors
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About this Article
History
- Original Manuscript: April 13, 2018
- Revised Manuscript: September 28, 2018
- Manuscript Accepted: October 5, 2018
- Published: October 26, 2018

Abstract

A modified InGaAs/InP one-sided junction photodiode (MOSJ-PD) is presented for the first time. The MOSJ-PD is proposed from the one-sided junction photodiode by inserting a cliff layer into the absorption layer. Compared to the modified uni-traveling carrier photodiode, the MOSJ-PD has the advantages of simpler epitaxial layer structure and lower junction capacitance. In the MOSJ-PD, the space charge effect at high light intensity can be suppressed. Thus, both 3-dB bandwidth and output current can be improved simultaneously. The performance characteristics of the MOSJ-PD, including energy band diagram, internal electric field, frequency response, photocurrent, and responsivity, are carefully studied.

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Layer	Material	Bandgap (eV)	Thickness (nm)	Doping Level ( ${cm}^{- 3}$ )	Dopant Type
P contact	InGaAs	0.734	50	$1 \times 10^{19}$	P
Absorption	InGaAs	0.734	280	$6 \times 10^{15}$	N
Spacer	InGaAsP	0.882	20	$6 \times 10^{15}$	N
Spacer	InGaAsP	1.105	20	$6 \times 10^{15}$	N
Collector	InP	1.35	300	$2 \times 10^{16}$	N
N contact	InP	1.35	800	$8 \times 10^{18}$	N

Layer	Material	Bandgap (eV)	Thickness (nm)	Doping Level ( ${cm}^{- 3}$ )	Dopant Type
P contact	InGaAs	0.734	50	$1 \times 10^{19}$	P
Absorption	InGaAs	0.734	50	$1 \times 10^{16}$	N
Cliff (absorption)	InGaAs	0.734	230	$4 \times 10^{16}$	P
Spacer	InGaAsP	0.882	20	$3 \times 10^{16}$	N
Spacer	InGaAsP	1.105	20	$3 \times 10^{16}$	N
Collector	InP	1.35	300	$3 \times 10^{16}$	N
N contact	InP	1.35	800	$8 \times 10^{18}$	N

Layer	Material	Bandgap (eV)	Thickness (nm)	Doping Level ( ${cm}^{- 3}$ )	Dopant Type
P contact	InGaAs	0.73	50	$2 \times 10^{19}$	P
Block	InP	1.35	100	$2 \times 10^{18}$	P
Spacer	InGaAsP	1.13	10	$2 \times 10^{18}$	P
Spacer	InGaAsP	0.89	10	$2 \times 10^{18}$	P
Absorption	InGaAs	0.73	50	$2 \times 10^{18}$	P
Absorption	InGaAs	0.73	50	$1 \times 10^{18}$	P
Absorption	InGaAs	0.73	50	$5 \times 10^{17}$	P
Absorption	InGaAs	0.73	30	$1 \times 10^{16}$	N
Spacer	InGaAsP	0.89	10	$1 \times 10^{16}$	N
Spacer	InGaAsP	1.13	10	$1 \times 10^{16}$	N
Cliff	InP	1.35	30	$3 \times 10^{17}$	N
Collector	InP	1.35	300	$1 \times 10^{16}$	N
Subcollector	InP	1.35	100	$1 \times 10^{18}$	N
N contact	InP	1.35	1000	$1 \times 10^{19}$	N

Parameter	InP	InGaAs
Electron mobility, $μ_{n}$	$5400 {cm}^{2} / Vs$	$12000 {cm}^{2} / Vs$
Hole mobility, $μ_{p}$	$200 {cm}^{2} / Vs$	$300 {cm}^{2} / Vs$
Valence band density of states, $N_{V}$	$1.1 \times 10^{19} {cm}^{- 3}$	$7.7 \times 10^{18} {cm}^{- 3}$
Conduction band density of states, $N_{C}$	$5.7 \times 10^{17} {cm}^{- 3}$	$2.1 \times 10^{17} {cm}^{- 3}$
Electron saturation velocity	$2.6 \times 10^{7} cm / s$	$2.5 \times 10^{7} cm / s$
Hole saturation velocity	$5 \times 10^{6} cm / s$	$5 \times 10^{6} cm / s$
Electron and hole life time (MOSJ-PD)	$2 \times 10^{- 9} s$	$1 \times 10^{- 7} s$
Electron and hole life time (MUTC-PD)	$1 \times 10^{- 9} s$	$1 \times 10^{- 9} s$
Electron Auger coefficient	$3.7 \times 10^{- 31} {cm}^{6} / s$	$3.2 \times 10^{- 28} {cm}^{6} / s$
Hole Auger coefficient	$8.7 \times 10^{- 30} {cm}^{6} / s$	$3.2 \times 10^{- 28} {cm}^{6} / s$
Real refractive index (1550 nm)	3.165	3.595
Imaginary refractive index (1550 nm)	0	0.075

Mobility Parameter	Parameter Description	InP	InGaAs
MU1N.CAUGH	Minimum mobility at high doping	$300 {cm}^{2} / Vs$	$3372 {cm}^{2} / Vs$
MU2N.CAUGH	Maximum mobility at low doping	$4917 {cm}^{2} / Vs$	$11599 {cm}^{2} / Vs$
MU1P.CAUGH	Minimum mobility at high doping	$20 {cm}^{2} / Vs$	$75 {cm}^{2} / Vs$
MU2P.CAUGH	Maximum mobility at low doping	$151 {cm}^{2} / Vs$	$331 {cm}^{2} / Vs$
ALPHAN.CAUGH	Fitting parameter	0	0
ALPHAP.CAUGH	Fitting parameter	0	0
BETAN.CAUGH	Fitting parameter	−2.3	−2.3
BETAP.CAUGH	Fitting parameter	−2.2	−2.2
GAMMAN.CAUGH	Fitting parameter	−3.8	−3.8
GAMMAP.CAUGH	Fitting parameter	−3.7	−3.7
DELTAN.CAUGH	Fitting parameter	0.46	0.76
DELTAP.CAUGH	Fitting parameter	0.96	1.37
NCRITN.CAUGH	Critical doping above which mobility degrades	$6.4 \times 10^{17} {cm}^{- 3}$	$8.9 \times 10^{16} {cm}^{- 3}$
NCRITP.CAUGH	Critical doping above which mobility degrades	$7.4 \times 10^{17} {cm}^{- 3}$	$1 \times 10^{18} {cm}^{- 3}$

Light Intensity ( $W / {cm}^{2}$ )	$1 \times 10^{4}$	$1 \times 10^{5}$	$3 \times 10^{5}$	$5 \times 10^{5}$	$7 \times 10^{5}$	$8 \times 10^{5}$	$9 \times 10^{5}$	$1 \times 10^{6}$	$1.1 \times 10^{6}$	$1.2 \times 10^{6}$
Bandwidth of OSJ-PD (GHz)	65.3	63.6	57.8	46.8	6.4	3.3	2.2	1.5	0	0
Bandwidth of MOSJ-PD (GHz)	67.3	66.2	62.7	56.5	43.9	27	3.1	1.9	1.3	0
Improvement of bandwidth (GHz)	2	2.6	4.9	9.7	37.5	23.7	0.9	0.4	1.3	0

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Applied Optics