Abstract
High-quality cerium-doped () thin films could be achieved on substrates using a pulsed-laser deposition method. The impact of dopant contents concentration on crystal structure, optical absorption, photoluminescence, and photoelectric properties has been intensively studied. X-ray diffraction analysis results have shown that films are highly () oriented, and the lattice spacing of the () planes is sensitive to the Ce doping level. The prepared films show a sharp absorption edge at about 250 nm, meaning a high transparency to deep ultraviolet (DUV) light. The photoluminescence results revealed that the emissions were in the violet–blue–green region, which are associated with the donor–acceptor transitions with the and oxygen vacancies related defects. A simple DUV photodetector device with a metal–semiconductor–metal structure has also been fabricated based on thin film. A distinct DUV photoresponse was obtained, suggesting a potential application in DUV photodetector devices.
© 2018 Optical Society of America
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