Abstract

The effects of strain on the electronics and optical properties of a p-i-n solar cell, composed of AlGaAs/InGaAs semiconductor multiple quantum wells, are investigated. The lattice mismatch between AlGaAs and InGaAs induces strain on the composite material; thus the solar cell structure is simulated first with strain and then without strain. Finally, the short-circuit current, fill factor, and cell efficiency for the two approaches are compared in order to determine the effects of the mentioned mismatch on the solar cell properties. In addition, the results are indicated for quantum wells, with different numbers and width. Moreover, the mole fraction of aluminum content of the material varies from 0.1 to 0.3. The simulations are carried out with the Silvaco-Atlas software package ver. 3.20.2.R. Our results show that the existence of strain leads to improvement of the solar cell operation.

© 2018 Optical Society of America

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