Abstract

The influence of residual carbon impurities incorporated into a heavily Mg-doped GaN layer has been studied systematically according to the relation between the carbon concentration and specific contact resistance. Furthermore, the results of temperature-dependent current-voltage characteristics and the photoluminescence spectra indicate that a proper concentration of residual carbon impurities can improve the performance of Ohmic contact by introducing deep-level defects to enhance the variable-range-hopping conduction.

© 2017 Optical Society of America

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