Abstract
Optical switches are key components in data links for optical communication networks requiring low crosstalk and insertion loss, high switching speed, and power efficiency. A multimode-interference (MMI)-coupler-based switch with multiple inputs and outputs serving as a switching unit is desired toward forming a large-scale switch matrix. Here we demonstrate a compact MMI coupler electro-optic switch based on the carrier injection effect on InGaAsP/InP substrates. This switch device is 2780 μm long by 18 μm wide. The switching states can be controlled by two index-modulation regions through applied bias voltages. Our simulation results show that the device exhibits low crosstalk of , high extinction ratio of , low electrical switching energy of , maximum operational frequency of , and optical bandwidth of in the C band. We experimentally validated one of the switching states on a fabricated device with maximum current injections of under combined bias voltages of and . Such monolithic integration schemes make them an ideal candidate for future on-chip photonic integrated circuits.
© 2016 Optical Society of America
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