Abstract

Quantum efficiency (QE) was modeled for an n-type doping ${\mathrm{InSb}}_{1-x}{\mathrm{Bi}}_x$ quantum-dot (QD) photodetector with a p-type doping AlGaAs bulk region. First, the relations of the electron and hole contributions to the current were stated. The absorption coefficient was calculated for the structure, and two windows were predicted in the quantum efficiency spectrum, which is important in the detection applications. High quantum efficiency was obtained due to the Bi inclusion in the structure of the photodetector.

© 2016 Optical Society of America

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