Abstract

A correction is given for a figure in [Appl. Opt. 52, 966 (2013) [CrossRef]  ].

© 2015 Optical Society of America

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References

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  1. M. Solano, M. Faryad, A. S. Hall, T. E. Mallouk, P. B. Monk, and A. Lakhtakia, “Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell backed by a metallic surface-relief grating,” Appl. Opt. 52, 966–979 (2013).
    [Crossref]

2013 (1)

Faryad, M.

Hall, A. S.

Lakhtakia, A.

Mallouk, T. E.

Monk, P. B.

Solano, M.

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Figures (1)

Fig. 2.
Fig. 2. (Left) Real and (right) imaginary parts of the relative permittivities of all semiconductor layers as functions of the free-space wavelength. All p-type layers are made of a-SiC:H with bandgap E g = 1.94 eV , all n-type layers are of a-Si:H with bandgap E g = 1.8 eV , the top ( 1 i ) intrinsic layer is of a - Si 1 u Ge u : H with bandgap E g = 1.4 eV , the middle ( 2 i ) intrinsic layer is of a - Si 1 u Ge u : H with bandgap E g = 1.6 eV , and the bottom ( 3 i ) intrinsic layer is of a-Si:H with bandgap E g = 1.69 eV .

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