Abstract

We report on the fabrication of metal–dielectric thin film stacks deposited directly onto silicon substrates for use as ultraviolet bandpass filters. Integration of these filters onto silicon improves the admittance matching of the structure when compared to similar designs fabricated on transparent substrates, leading to higher peak transmission or improved out-of-band rejection if used with a Si-based sensor platform. Test structures fabricated with metallic Al and atomic layer deposited Al2O3 were characterized with spectroscopic ellipsometry and agree well with optical models. These models predict transmission as high as 90% the spectral range of 200–300 nm for simple three-layer coatings.

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