This work proposes a scheme of all-optical XNOR/NOT logic gates based on a reflective vertical cavity semiconductor (quantum wells, QWs) saturable absorber (VCSSA). In a semiconductor Fabry–Perot cavity operated with a low-intensity resonance wavelength, both intensity-dependent saturating phase-shift and thermal phase-shift occur, which are considered in the proposed logic operations. The VCSSA-based logics are possible using the saturable behavior of reflectivity under the typical operating conditions. The low-intensity saturable reflectivity is reported for all-optical logic operations where all possible nonlinear phase-shifts are ignored. Here, saturable absorption (SA) and the nonlinear phase-shift-based all-optical XNOR/NOT gates and one-bit memory or LATCH are proposed under new operating conditions. All operations are demonstrated for a VCSSA based on InGaAs/InP QWs. These types of SA-based logic devices can be comfortably used for a signal bit rate of about 10 GHz corresponding to the carrier recovery time of the semiconductor material.
© 2014 Optical Society of AmericaFull Article | PDF Article
N. Peyghambarian and H. M. Gibbs
J. Opt. Soc. Am. B 2(7) 1215-1227 (1985)
Sang Hun Kim, Jae Hun Kim, Jae Won Choi, Chang Wan Son, Young Tae Byun, Young Min Jhon, Seok Lee, Deok Ha Woo, and Sun Ho Kim
Opt. Express 14(22) 10693-10698 (2006)
Moshe Nazarathy, Zeev Zalevsky, Arkady Rudnitsky, Bar Larom, Amir Nevet, Meir Orenstein, and Baruch Fischer
J. Opt. Soc. Am. A 26(8) A21-A39 (2009)